Untitled
Abstract: No abstract text available
Text: SKM 100GB123D . 4 15 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values .8 4 15 6* *7 &* /100 .8 4 /50 6* &*< . 4 15 6* /00 + . 4 :0 6* ;0 + /50 + &*<41%&* > 10 =7 SEMITRANS 2 * 4 $00 ? *7 =7 A /100
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100GB123D
100GAL123D
100GAR123D
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SKM100GAL123D
Abstract: skm100gb123d 100gal123d
Text: SKM 100GB123D . 4 15 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values .8 4 15 6* *7 &* /100 .8 4 /50 6* &*< . 4 15 6* /00 + . 4 :0 6* ;0 + /50 + &*<41%&* > 10 =7 SEMITRANS 2 * 4 $00 ? *7 =7 A /100
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100GB123D
100GAL123D
100GAR123D
SKM100GAL123D
skm100gb123d
100gal123d
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100GAL123D
Abstract: SKM100GB123D
Text: SKM 100GB123D . 4 15 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values .8 4 15 6* *7 &* /100 .8 4 /50 6* &*< . 4 15 6* /00 + . 4 :0 6* ;0 + /50 + &*<41%&* > 10 =7 SEMITRANS 2 * 4 $00 ? *7 =7 A /100
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100GB123D
100GAL123D
100GAR123D
100GAL123D
SKM100GB123D
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Untitled
Abstract: No abstract text available
Text: SKM 100GB123D . 4 15 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values .8 4 15 6* *7 &* /100 .8 4 /50 6* &*< . 4 15 6* /00 + . 4 :0 6* ;0 + /50 + &*<41%&* 4 / > 10 =7 SEMITRANS 2 * 4 $00 ? *7
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100GB123D
100GAL123D
100GAR123D
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SKM150GB123D
Abstract: skm150gal123d
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
SKM150GB123D
skm150gal123d
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SKM150GB123D
Abstract: skm150gal123d SEMIKRON
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
SKM150GB123D
skm150gal123d
SEMIKRON
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skm150gb123d
Abstract: No abstract text available
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
skm150gb123d
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75GB128DN
Abstract: No abstract text available
Text: SKM 75GB128DN Absolute Maximum Ratings Symbol Conditions IGBT ' '78 : "<$ SEMITRANSTM 2N SPT IGBT Module ,0 1$ ! ,0 4- 1 ,0 4- 1$ ! 2 = 7 '=> ? ($ 2 @ Values Units 2,-50 6-
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75GB128DN
75GB128DN
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Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
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75GB176D
11Typ.
12Typ.
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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TO-238
Abstract: JE23 FP1010
Text: SEMIKRON INC is E o I a i3 f c > b 7 3 i ' 0 7 _ V rs M V rrm Ifrms maximum value for continuous operation 40 A V Ifav (sin. 180; Tease = 85 °C; 50 Hz) 15,2 A 400 SKLD 20 F 04 SKM D 20 F 04 600 S KLD 20 F 06 SKM D 20 F 06 800 S KLD 20 F 08 SKM D 20 F 08
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SKLD20
Q0Q14b2
SKLD20F
O-238
SKMD20F
TO-238
JE23
FP1010
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TOKO 5kmt
Abstract: 465BBXS-007 10-150MHz Toko High frequency LC Filter triple tuned 465BBXS-009 TOKO 5kmw 464BBX-003 465B 5KMT 465BBXS-007
Text: ISTO H O S Ä « skm w 149 5KM T High Frequency LC Filters 5KMW Double Tuned Filter 5KMT Triple Tuned Filter Frequency Range: 10-150MHz L: 0.03 ~ 50 iH 0 : 4 0 ~ 70 (at 100MHz 5KM W 5KM T 6.1 Max. 5.9 Max ; Unit, mm Features Unii: mm • Small and light,
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10-150MHz
100MHz)
464BBX-002
464BBX-003
465BBXS-007
465BBXS-009
465BBXS-020
465BBXS-034
TOKO 5kmt
Toko High frequency LC Filter triple tuned
TOKO 5kmw
465B
5KMT 465BBXS-007
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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SKM 40 GD 121 D
Abstract: skm 40 gd 121 semibox
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units 600 600 7 0 /5 0 1 4 0 /1 0 0 ±20 250 - 4 0 . +150 125) 2500 Class F 40/125/56 VcES VcGR R ge = 20 lc T0ase = 25/75 °C Tease = 25/75 °C; tp = 1 ms ICM V ges P to t per IGBT, T oase = 25 °C
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50GB063D
XLS-24
SKM 40 GD 121 D
skm 40 gd 121
semibox
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)
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semikron skm 75gb
Abstract: No abstract text available
Text: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)
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Untitled
Abstract: No abstract text available
Text: 1 back IT S E M IK R D N zurück Absolute Maximum Ratings Symbol VcES VcGR lc ICM Vges Ptot Tj, Tstg Visol humidity climate Values Units Conditions ' 1200 1200 300 / 220 600 / 440 ±20 1660 - 4 0 .+ 1 5 0 (125) 2 500 Class F 40/125/56 Rge = 20 k£2 Tease = 25/80 °C
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XLS-10
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc ICM Units Rge = 20 T oase = 25/60 °C Tease = 25/60 °C; tp = 1 ms V ges Ptot per IG B T , T oase = 25 °C T j, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200
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Untitled
Abstract: No abstract text available
Text: seMIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 1700 1700 220/150 440 / 300 ±20 1250 -40 . +150 125) 4000 = 20 Toase = 25/80 °C Toase = 25/80 °C; tp = 1 ms R ge lc IcM V ges Ptot Tj, (Tstg) V¡sol humidity climate
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300GA720
M3000A17
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SKM 75 Gb 124 IGBT
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges R ge = 20 k £ l T oase = 25/75 °C T oase = 25/75 °C; tp = 1 ms Ptot Tj, Tstg) per IG B T , T oaSe = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity climate
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Untitled
Abstract: No abstract text available
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg) V¡sol humidity climate Units 1200 1200 145 /110 290 / 220 ±20 830 ^ 0 . +150 (125) 2500 Rge = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Units 1200 1200 9 0 /7 5 180 / 1 5 0 ±20 390 - 4 0 . + 150 125) 2500 R ge = 20 k£^ T oase = 25 /60 °C Tease = 25 /60 °C; tp = 1 ms per IG B T , T oase = 25 ° C
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Untitled
Abstract: No abstract text available
Text: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1
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L124D
GAR124D
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