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    SKM 25 GB 100 Search Results

    SKM 25 GB 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10138650-058202SLF Amphenol Communications Solutions BergStak HS™ 0.5mm Board-to-Board, Vertical Header,50Positions,Single GND,25Gb/s Version Visit Amphenol Communications Solutions
    10137858-11JLF Amphenol Communications Solutions ExaMAX® VS 25Gb/s High Speed Backplane Connector, 4-Pair, 112 position, 8 IMLA, Right Angle Receptacle, Right Guide Pin Visit Amphenol Communications Solutions
    10139406-4040LF Amphenol Communications Solutions Omni-Path Copper Cable Assemblies 100G, High Speed Input Output Connectors, QSFP28, 25Gb/s,26 AWG, 4m, non-halogen free Visit Amphenol Communications Solutions
    10137857-11JLF Amphenol Communications Solutions ExaMAX® VS 25Gb/s High Speed Backplane Connector, 4-Pair, 84 position, 6 IMLA, Right Angle Receptacle, Right Guide Pin Visit Amphenol Communications Solutions
    10139406-4050LF Amphenol Communications Solutions Omni-Path Copper Cable Assemblies 100G, High Speed Input Output Connectors, QSFP28, 25Gb/s,26 AWG, 5m, non-halogen free Visit Amphenol Communications Solutions

    SKM 25 GB 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    skm 75 gb 100

    Abstract: No abstract text available
    Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    skm 25 gb 100 d

    Abstract: No abstract text available
    Text: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    semikron IGBT 75a 600v module

    Abstract: No abstract text available
    Text: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    IEC 974-1

    Abstract: SKM 400
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C ICRM Tcase = 25 (80) °C, tp =1 ms VGES Tvj, (Tstg ) TOPERATION ≤ T stg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 100 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF T\datbl\B06-ig bt\100 GB128

    Untitled

    Abstract: No abstract text available
    Text: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    M200G128

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF M200G128 XLS-13

    SKM 600 gb

    Abstract: semikron IGBT 400A 600v
    Text: SKM 600 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 75 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    RU diode

    Abstract: 128D
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    skm 300 125

    Abstract: No abstract text available
    Text: SKM 400 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    SKM 600 gb

    Abstract: No abstract text available
    Text: SKM 195 GB 126 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


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    skm 50 gb 100 d

    Abstract: No abstract text available
    Text: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 skm 50 gb 100 d

    skm 195 gb 125 dn

    Abstract: No abstract text available
    Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF M195GB126DN skm 195 gb 125 dn

    skm 195 gb 125 dn

    Abstract: M195GB126DN
    Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF M195GB126DN skm 195 gb 125 dn

    Untitled

    Abstract: No abstract text available
    Text: SKM 145 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF T\datbl\B06-ig bt\145 gb128d

    skm 50 gb 100 d

    Abstract: No abstract text available
    Text: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


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    semikron IGBT 150A 600v

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF T\datbl\B06-ig bt\200 gb128d semikron IGBT 150A 600v

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3


    Original     		PDF 3K7/IE32