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    SKM 200 GB 12 V Search Results

    SKM 200 GB 12 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
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    SKM 200 GB 12 V Price and Stock

    SEMIKRON SKM200GB12V

    Igbt Module; Continuous Collector Current:311A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv; Transistor Mounting:Panel Rohs Compliant: Yes |Semikron SKM200GB12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM200GB12V Bulk 12
    • 1 -
    • 10 $252.15
    • 100 $252.15
    • 1000 $252.15
    • 10000 $252.15
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    SEMIKRON SKM200GB12V 22892064

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 237A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM200GB12V 22892064 1
    • 1 $271.86
    • 10 $208.26
    • 100 $208.26
    • 1000 $208.26
    • 10000 $208.26
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    SKM 200 GB 12 V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


    Original     		PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56


    OCR Scan     		13bb71 PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms


    OCR Scan     		PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
    Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms


    OCR Scan     		123D1 skm 152 ga 123 semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56 PDF

    GB125D

    Abstract: Dt10 gb125
    Text: SKM 200 GB 125 D . Values Absolute Maximum Ratings Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 GB125D Dt10 gb125 PDF

    skm 40 gb 124 d

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
    Text: SKM 400 GB 125 D . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" PDF

    SKM 400 gal 124 IGBT

    Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


    Original     		PDF

    Semikron SKM 145 GB 124 DN

    Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
    Text: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits PDF

    Untitled

    Abstract: No abstract text available
    Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V


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    skm 195 gb 125 dn

    Abstract: NPT-IGBT SKM skm195gal
    Text: SKM 195 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 skm 195 gb 125 dn NPT-IGBT SKM skm195gal PDF

    IGBT SKM 145 GB 063 DN

    Abstract: M145GB063DN
    Text: SKM 145 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 IGBT SKM 145 GB 063 DN M145GB063DN PDF

    GAL 700

    Abstract: 1002C skm 141
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


    Original     		PDF

    Semikron SKM

    Abstract: GAL 200 gb
    Text: SKM 145 GB 174 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 Semikron SKM GAL 200 gb PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3


    Original     		3K7/IE32 PDF

    300GB

    Abstract: GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


    Original     		B6-100 300GB GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D PDF

    skm 195 gb 125 dn

    Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
    Text: SKM 195 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150


    OCR Scan     		13bb71 00D3bMb Characteristic21 PDF

    F120A

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 200 / 145 400 / 290 ± 20 700 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C


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    skm 195 gb 125 dn

    Abstract: No abstract text available
    Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		M195GB126DN skm 195 gb 125 dn PDF

    skm195gal

    Abstract: SEMIKRON book
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 290 / 200 580 / 400 ± 20 1250 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C


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    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C


    Original     		PDF

    LB 124D

    Abstract: skm 40 gb 124 d 400G124 the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si DIODE LS15
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


    Original     		PDF