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    SKM 200 GAL 173 D IGBT Search Results

    SKM 200 GAL 173 D IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SKM 200 GAL 173 D IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


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    SKM 200 GAL 173 D IGBT

    Abstract: SKM 200 GAL 173 IGBT
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


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    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


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    SKM 75 Gb 124 IGBT

    Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
    Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON


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    GAL 700

    Abstract: 1002C skm 141
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    semikron skm 300 gar 123

    Abstract: skm 300 gar skm 22 gal 123 SKM 300 GB 123 D 300GB-6 SKM 300 GB 12 V
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    SKM 75 GAL 123 IGBT

    Abstract: SKM 75 GB 123 SKM 380 skm 50 gb 100 d Semitrans* IGBT GAL 200 gb
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = 25/80 °C


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    SKM 40 GD 121 D

    Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
    Text:  6 0,75$16Š ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV ‡ 026 LQSXW YROWDJH FRQWUROOHG ‡ )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV ‡ 1 FKDQQHO ‡ '& VHUYR DQG URERW GULYHV ‡ /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH


    Original     		PDF 1371RQ SKM 40 GD 121 D SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d

    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


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    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    SKM 75 GAL 123 IGBT

    Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 GB123 GB173 SKM300GB SKM 75 GAL 123 IGBT SKM 300 CIRCUIT GB-123 skm 50 gd 123 d 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400

    semikron SKm 123D

    Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 00GA163D fll3bb71 semikron SKm 123D semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms


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    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
    Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms


    OCR Scan     		PDF 123D1 skm 152 ga 123 semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56

    SKM 200 CIRCUIT

    Abstract: B 688
    Text: se MIKRDn Absolute Maximum Ratings Symbol VcES VcGH lc IcM V qes Ptot Tj. Tstg Visol humidity climate V a lu e s | . 1 2 3 D 1 Conditions ' . 123 D 1200 1200 200/150 400/300 ±20 1250 - 4 0 . . .+150(125) 2 500 71 Class F 55/150/56 FWD6) 260/180 200/130


    OCR Scan     		PDF IEC68T SKM 200 CIRCUIT B 688

    Untitled

    Abstract: No abstract text available
    Text: 1 back IT S E M IK R D N zurück Absolute Maximum Ratings Symbol VcES VcGR lc ICM Vges Ptot Tj, Tstg Visol humidity climate Values Units Conditions ' 1200 1200 300 / 220 600 / 440 ±20 1660 - 4 0 .+ 1 5 0 (125) 2 500 Class F 40/125/56 Rge = 20 k£2 Tease = 25/80 °C


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    semikron SKm GAL 123D

    Abstract: CASED61
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm


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    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Rge = 20 k£2 T c a s e = 25/80 °C T c a s e = 25/80 °C; tp = 1 ms P to t p e r IG B T , Tcase Units = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc


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    VQE 12

    Abstract: No abstract text available
    Text: s e M IKR D n Absolute Maximum Ratings S ym bol s e m itr a n s m V a lu e s C ond itions ' U nits AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 7 5 /5 0 14 4/10 0 ±20 500 - 4 0 . . ,+150 125 4000 Class F 55/150/56 Inverse Diode 81 Tease = 25/80 C If= - lc


    OCR Scan     		PDF SKM75GB173D VQE 12

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc ICM V ges = 20 k£2 Tease = 25/80 °C Rge Tease = 25/80 °C; tp = 1 ms p e r IG BT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes If= - lc IfM= - IcM Tease = 25/80 °C


    OCR Scan     		PDF 300GB219