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    SKM 200 CIRCUIT Search Results

    SKM 200 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    SKM 200 CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		arketin\FRAMEDAT\datbl\B06-igbt\200gb126d PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    M200G128

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		M200G128 XLS-13 PDF

    cv190

    Abstract: GAL 200 gb
    Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3


    Original     		3K7/IE32 PDF

    SKM 151F

    Abstract: ac drives LS 600 M151A SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R
    Text: SKM 151 A4R Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units 500 500 70 / 50 280 / 200 ± 20 780 –40 . +150 (125) 2 500 RGE = 20 kΩ Tc = 25 / 80 °C Tc = 25 / 80 °C AC, 1 min. IEC 60721-3-3


    Original     		M151A LS-52 SKM 151F ac drives LS 600 SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 200 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		T\datbl\B06-ig bt\200 gb126d PDF

    GB125D

    Abstract: Dt10 gb125
    Text: SKM 200 GB 125 D . Values Absolute Maximum Ratings Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		3K7/IE32 GB125D Dt10 gb125 PDF

    semikron IGBT 150A 600v

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		T\datbl\B06-ig bt\200 gb128d semikron IGBT 150A 600v PDF

    cv190

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		T\datbl\B06-ig bt\200 gb128d 20kHz cv190 PDF

    skiip 613 gb

    Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
    Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2


    Original     		PDF

    skiip 613 gb

    Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
    Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2


    Original     		PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


    Original     		PDF

    SKHI 20

    Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
    Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200


    OCR Scan     		PDF

    SKM 75 GAL 123 IGBT

    Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		GA123 GB123 GB173 SKM300GB SKM 75 GAL 123 IGBT SKM 300 CIRCUIT GB-123 skm 50 gd 123 d 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400 PDF

    semikron SKm 123D

    Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		GA123 00GA163D fll3bb71 semikron SKm 123D semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d PDF

    B539

    Abstract: B539B skm 151 mosfet SKM 181 R B-539 SKM254F SKM151F SKM 181 c SKM 121 R skm 181 mosfet
    Text: s em ik r o n Section 5: SEMITRANS M Power MOSFET Modules Summary of Types Types’ * Circuit V ds Id Tease = 25 °C • New type V A RDS on Tj Pd Rthjc Case Page B 5 -3 = 25 °C Tease max. = 25 °C mS2 W °C/W 100 200 700 0,18 D 15 200 130 20 700 0,18


    OCR Scan     		SKM111 B5-18 SKHI21 B539 B539B skm 151 mosfet SKM 181 R B-539 SKM254F SKM151F SKM 181 c SKM 121 R skm 181 mosfet PDF

    D73 -Y

    Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
    Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700


    OCR Scan     		PDF

    skm 191 mosfet

    Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
    Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020


    OCR Scan     		450s1 D15/D45 450A010 180A020 450A020 120B020 240B020 310B020 240M020 310M020 skm 191 mosfet skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191 PDF

    skm 200 gb 122 d

    Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
    Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity


    OCR Scan     		l3bb71 G0D37G2 10-E1 skm 200 gb 122 d SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122 PDF

    skm 200 gb 122 d

    Abstract: SKM 200 GB 102 D SKM 200 GB 122 skm 100 gb 121d SKM 200 GB 102D SEMIKRON SKM 22 GAL 121D skm 100 gb 101 d 122d semikron rf3 skm 141
    Text: s e M IK R O N Sym bol Values . 101 D . 121 D .1 0 2 D i . 122 D Conditions 11 V ces II O C\J UJ O cr V cgr 1000 1200 V 1000 1200 V lc Tease — 2 5 /8 0 ‘ C 2 0 0 /1 5 0 ICM Tease = 2 5 /8 0 °C 4 0 0 /3 0 0 per IG B T , Tease = 2 5 ± 20 V - 5 5 . . . + 150


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms


    OCR Scan     		PDF