skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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SKM 300 CIRCUIT
Abstract: 2002C
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 300 / 220 600 / 440 ± 20 1660 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode Tcase = 25/80 °C
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 360 800 / 720 ± 20 2750 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A
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B621-2
Abstract: 0/skm 125 ga 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 500 / 420 1000 / 840 ± 20 3000 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A
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SKM 75 GAL 123 IGBT
Abstract: skm 200 GB 12 V SKM 300 GB 12 V semikron skm 300 gar 123 SKM 300 CIRCUIT GAL 200 gb semikron skm 150 gal skm 125 ga 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 300 / 200 600 / 400 ± 20 1550 – 40 . . .+150 125) 2 500 7) Class F 55/150/56 V V A A V W °C V Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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SKM 300 CIRCUIT
Abstract: SKM 300 GA 102 D
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 300 800 / 600 ± 20 2500 – 40 . . .+150 125) 2 500 7) Class F 55/150/56 V V A A V W °C V Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 550 / 400 1100 / 800 ± 20 2700 – 40 . . .+150 125) 2 500 7) Class F 55/150/56 V V A A V W °C V Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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SKM 300 CIRCUIT
Abstract: SKM 300 GB 123 D SKM 350 GAX
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 300 / 220 600 / 440 ± 20 1660 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms
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300GB
Abstract: GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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B6-100
300GB
GAL 700
semikron skm 300 gar 123
SKM 300 GB 123 D
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SKM 200 CIRCUIT
Abstract: B 688
Text: se MIKRDn Absolute Maximum Ratings Symbol VcES VcGH lc IcM V qes Ptot Tj. Tstg Visol humidity climate V a lu e s | . 1 2 3 D 1 Conditions ' . 123 D 1200 1200 200/150 400/300 ±20 1250 - 4 0 . . .+150(125) 2 500 71 Class F 55/150/56 FWD6) 260/180 200/130
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IEC68T
SKM 200 CIRCUIT
B 688
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms
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123D1
skm 152 ga 123
semikron skm 152 ga 123
semikron skm 152 ga
skm 200 IGBT 600V 200A
skm 22 gal 123
SKM 200 GB 102 D
SKM 300 CIRCUIT
1502C
M200G812
CASED56
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Untitled
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 T c a s e = 25/80 ICM Tcase Values Units Rge °C = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Inverse Diode
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40ical
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semikron SKm 123D
Abstract: SKM 200 APPLICATION
Text: s e m ik r d n Absolute Maximum Ratings Symbol Values Conditions Units Plot Tj, Tstg per IG B T , Tease = 25 °C Visot AC, 1 min. DIN 40 040 DIN IE C 68T.1 1200 1200 3 0 0 /2 0 0 600 / 400 ±20 1550 - 4 0 . . .+150(125) 2 500 7) Class F 55/150/56 Inverse Diode
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Ptot = 20 k£2 Tcase = 25/80 °C Rge Tcase = 25/80 °C; tp = 1 ms p e r IG B T , Tcase = 25 °C Tj, Tstg Vsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc = 20 k£2 T c a s e = 25/80 °C ICM Tcase Rge = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C T j, T s tg V sol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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SK 6211
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Pfot Tj, Tstg Visol humidity climate Values Conditions ' Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms p e r IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms
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Semikron SKM 173D
Abstract: SK 200 GAR 125 SKM200GB173 B679
Text: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi
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B-6114
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Symbol Conditions VCES VcGR lc Rge ~ 20 kn ICM V g es Ptot Tj, Tstgl V alu es Units ' 1200 Tease = 25/80 °C Tease = 25/80 ' C tp = 1 ms per IG B T, T caSe = 25 °C V 2700 - 4 0 . . .+ 1 5 0 (1 2 5 W °C 2 5 0 0 71
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