SKM151A4R
Abstract: No abstract text available
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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SKM 111 AR
Abstract: SKM 181 R semikron semitrans skm 151 mosfet SKM 300 CIRCUIT SKM111 SKM181 semikron semitrans 3 SKM120
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 100 100 200 600 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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b58 253
Abstract: SKM 111 AR SKM 121 R semikron semitrans SKM 121 AR M1 case
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 130 390 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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SKM 111 AR
Abstract: semikron skm 214 SKM 181 R semikron semitrans SKM111 Semitrans SKM 300 CIRCUIT skm 181 mosfet semikron skm 40
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 100 100 125 375 ± 20 400 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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62792
Abstract: semikron skt 24 semikron data 01155 6822 008028 MOSFET 2906 semikron skt 240 180A020 skt16
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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semikron semitrans
Abstract: SKM 111 AR SKM 181 R SKM 204 A SKM204A skm 181 mosfet SEMIKRON 204 Semitrans
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ Tcase = 55 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 50 50 200 600 ± 20 400 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V
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SKM 400GB062D
Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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300GD063D
125GD127D
85GD127D
350GD063DM
250GD128D
350GD128DM
400GD063D
400GD128D
500GD128DM
SKM 400GB062D
62792
02634
SKM 400GD063D
heatsink for skkt 72
semikron skt 140
IEC 974-1
Semitrans M SKD 100 GAL 124d
6822
semikron skkt 31
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 181 R
Abstract: semikron semitrans skm 151 mosfet SKM 111 AR SKM 121 R SKM 300 CIRCUIT SKM151R nf 52 ar skm204a SKM 121 AR
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ AC, 1 min. DIN 40 040 DIN IEC 68 T.1 500 500 48 192 ± 20 625 –40 . +150 (125) 2 500 Class F 40/125/56 V V A A V W °C V 48
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30source
SKM 181 R
semikron semitrans
skm 151 mosfet
SKM 111 AR
SKM 121 R
SKM 300 CIRCUIT
SKM151R
nf 52 ar
skm204a
SKM 121 AR
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skm 152 ga
Abstract: Semitrans M SKD 100 GAL semikron skt 40/12 semikron skkt 15/12 semikron 14 MD skm 200 gb 122 d semikron skm 152 ga semikron skkd 15/12 SKN 170 semikron skkt 132/ 14/ E
Text: SEMIBOX Standard Packing Units Component Types Standard Packing Unit Content Box Dimensions Weight compo- accesnents sories 1 mm x mm x mm kg 1. SEMIPACK Thyristor/Diode Modules SEMIPACK 0 SEMIPACK 1 SEMIPACK 2 SEMIPACK 3 SEMIPACK 4 SEMIPACK 5 SKKD 15; SKKE 15; SKKH 15;
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skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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skm 254 f
Abstract: SKM254F SKM181F SKM 204 A SKM151F SKM 111 AR E63532 SKM120
Text: SEMITRANS M1 SKM 111 AR SKM 121 AR SKM 151 F SKM 180 A 020 SKM 181 SKM 181 F Case D 15 UL recognized, file no. E 63 532 CASEOS 2.8x0.8 i 40 Jl Dimertsions in mm SEMITRANS 2 SKM 120 B 020 SKM 204 A SKM 214 A SKM 254 F UL recognized, file no. E 63 532 c*sano
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Pd C onditions ' R qs = 20 k fi humidity climate Units 100 V V lo o AC, 1 min DIN 40 040 DIN IEC 68 T.1 SEMITRANS M Power M OSFET Modules SKM 111 AR A A 200 600 ±20 700 55 . . .+150
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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skm 191
Abstract: semikron skm 191 Ultrasonic welding circuit diagram SKM181FC skm 151 mosfet semikron skm 191 fc SKM151FC skm 141 skm 191 mosfet Ultrasonic welding generator
Text: se MIKRO n Absolute Maximum and Minimum Ratings1* Sym bol V sup Vj Visol Tease Tstg Rating Value Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature I mm. max. - 18 Vsup + 0,3 2500 + 85 + 85 -0 ,3 -4 0 -4 0 Unit
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SKM111
SKM181
skm 191
semikron skm 191
Ultrasonic welding circuit diagram
SKM181FC
skm 151 mosfet
semikron skm 191 fc
SKM151FC
skm 141
skm 191 mosfet
Ultrasonic welding generator
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skm 100 gb 101 d
Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Text: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM
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13bh71
Woff12
WoH2351
skm 100 gb 101 d
skm 100 gb 121d
Si 122D
GAL 16 v 8 D DIP
skm 100 gb 122 d
skm 50 gb 101 d
D4252-1
skm 200 gb 122 d
skm 75 gb 101 d
SEMIKRON SKM 22 GAL 121D
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skm 141
Abstract: No abstract text available
Text: fil3bb71 0GG3bl0 2T7 « S E K 6 S1E D SEMIKRON SEMIKRON INC Absolute Maximum and Minimum Ratings1^ S ym bol R a tin g Vsup Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature U n it V a lu e m in . Vj Visol Tease
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fil3bb71
SKM111
SKM181
skm 141
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SKM111RZR
Abstract: 111AR skm 50 z 100 R
Text: s e MIKRD n Absolute Maximum Ratings Sym bol /> R gs = 20 kQ CO jH —I V ds V dgr Id Idm V gs Pd V ¡sol hu m id ity clim a te Values Units 100 100 200 600 + 15 A R : ± 20; R ZR - 0,3 700 -5 5 . . .+150 2 500 V V A A V W Conditions ' A C , 1 m in, 200 nA
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B6-10
SKM111RZR
111AR
skm 50 z 100 R
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Si 122D
Abstract: SEMIKRON SKM 100 GAL 101D skm 150 gal 122d SKM 300 GB 12 V skm 100 gb 101 d SKM 200 GB 102D semikron skm 150 gb 122 semikron skm 50 z 100 R semikron skm 150 gal
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1200 1 0 0 /7 5 ICM Tease = 2 5 /8 0 C 2 0 0 /1 5 0 V ges Ptot per IG B T , T case = 2 5 °C II O C LU Tease = 2 5 /8 0 CM a cr 1000 VcES VcGR lc 1000 1200
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Untitled
Abstract: No abstract text available
Text: Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VcEsat. soft and fast CAL diodes" Preliminary Data _ _ Type VcES FW lc ^VcEsat P,0f @ @ @ lc 25X Tease IG B T W X /W Tease =25 C RtrvCH d u r in g 1995 V A V C ir c u it
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Untitled
Abstract: No abstract text available
Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56
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13bb71
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Untitled
Abstract: No abstract text available
Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150
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13bb71
00D3bMb
Characteristic21
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IGBT K 2611
Abstract: No abstract text available
Text: SEMIKRDN Absolute Maximum Ratings Symbol Values Conditions 11 Units V ges Ptot Tj, Tstg per IGBT, Tease = 25 “C Visol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 4 0 /25 7 0 /5 0 ±20 200 - 4 0 . . .+150(125) 2 500 Class F 55/150/56
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SKM40GD
IGBT K 2611
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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