Untitled
Abstract: No abstract text available
Text: SKiiP 613GD123-3DUL < '2= 3 ! 6 Absolute Maximum Ratings Symbol Conditions IGBT ># > , ># :! " @ < '2 +&%, = Values Units ('%% A%% B '% > > > $%% +12%, 1&% +*2%, *2%% Inverse diode SKiiP 3 6-pack-integrated
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613GD123-3DUL
613GD123-3DUL
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Untitled
Abstract: No abstract text available
Text: SKiiP 613GD123-3DUL < '2= 3 ! 6 Absolute Maximum Ratings Symbol Conditions IGBT ># > , ># :! " @ < '2 +&%, = Values Units ('%% A%% B '% > > > $%% +12%, 1&% +*2%, 1*'% Inverse diode SKiiP 3 6-pack-integrated
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613GD123-3DUL
SKF16B-230-1)
D123-3DUL
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SKCB
Abstract: skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20
Text: Modules – Explanations – SKiiP SKiiP gate driver designator D: gate driver Features DU: gate driver with DC-link voltage measurement and over voltage protection • SKiiP: SEMIKRON integrated intelligent Power is a power semiconductor subsystem • SKiiP integrates power semiconductor switches, heat
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th5000
2m2-45-2-12
2m2-45-3-12
2m2-45-4-12
3m3-45-2-12
3m3-45-3-12
3m3-45-4-12
4m7-40-2-12
4m7-40-3-12
4m7-40-4-12
SKCB
skcb 2m2-45-3-12
3m3-45-2-12
SKiiP 83 AC 12 i t 1
41046220
SKIIP "2 FOLD"
SKIIP85
SKIIP DRIVER
SKIIP GD
semikron skiip 20
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CALCULATION SemiSel 3.1
Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Text: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2
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SM/5/FO/000/006/Rev00/25
V020627
CALCULATION SemiSel 3.1
semikron skiip3
DIN 5463
usage of skiip
CALCULATION SemiSel
skiip gb 120
semikron skiip vf group
semikron skiip 81 AN 15 T
B DIN 5463
semikron IGBT, 1200V, 600A, H bridge
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613GD123-3DUL
Abstract: PX16 bottom12 semikron IGBT skiip 3000kV
Text: SKiiP 613GD123-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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613GD123-3DUL
613GD123-3DUL
PX16
bottom12
semikron IGBT skiip
3000kV
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SKCB
Abstract: SKiiP 81 AN 15 T1 SKIIP 81 AC 12 I T1 skcb 2m2-45-3-12 semikron skiip3 SKIIP "2 FOLD" 3m3-45-2-12 IGBT driver IC with PWM output SEMIKRON skiip gb 120 CALCULATION SemiSel
Text: 3. Dezember 2003 Page: 1 von: 26 8VHU 0DQXDO IRU 6.LL3 6\VWHPV Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main Features of SKiiP Systems . 2
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SM/5/FO/000/006/Rev00/25
V031201
SKCB
SKiiP 81 AN 15 T1
SKIIP 81 AC 12 I T1
skcb 2m2-45-3-12
semikron skiip3
SKIIP "2 FOLD"
3m3-45-2-12
IGBT driver IC with PWM output SEMIKRON
skiip gb 120
CALCULATION SemiSel
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semikron skiip 400 gb
Abstract: 803GD061-3DUW
Text: SKiiP 803GD061-3DUW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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803GD061-3DUW
semikron skiip 400 gb
803GD061-3DUW
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132GD120-318CTV
Abstract: semikron skiip 20 132-gd120 IC-125A semikron IGBT 150A 600v
Text: SKiiP 132GD120-318CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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132GD120-318CTV
132GD120-318CTV
semikron skiip 20
132-gd120
IC-125A
semikron IGBT 150A 600v
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Untitled
Abstract: No abstract text available
Text: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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513GD172-3DUL
513GD172-3DUL
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semikron skiip 400 gb
Abstract: semikron skiip 613GD061-3DUL skiip gb 120 PX16
Text: SKiiP 613GD061-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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613GD061-3DUL
semikron skiip 400 gb
semikron skiip
613GD061-3DUL
skiip gb 120
PX16
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513GD173-3DUL
Abstract: semikron skiip 400 gb semikron skiip 3 skiip gb 120 MKP 357 PX16 SKIIP 125 513GD173
Text: SKiiP 513GD173-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513GD173-3DUL
513GD173-3DUL
semikron skiip 400 gb
semikron skiip 3
skiip gb 120
MKP 357
PX16
SKIIP 125
513GD173
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semikron skiip 400 gb
Abstract: skiip gb 120 semikron IGBT skiip 513GD122-3DUL semikron skiip 3 semikron skiip 31 PX16 semikron skiip 3 gb 120 3000kV 513GD1223DU
Text: SKiiP 513GD122-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513GD122-3DUL
semikron skiip 400 gb
skiip gb 120
semikron IGBT skiip
513GD122-3DUL
semikron skiip 3
semikron skiip 31
PX16
semikron skiip 3 gb 120
3000kV
513GD1223DU
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semikron skiip 400 gb
Abstract: 513GD172-3DUL semikron skiip sensor s33 SKIIP APPLICATION skiip gb 120 PX16
Text: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513GD172-3DUL
semikron skiip 400 gb
513GD172-3DUL
semikron skiip
sensor s33
SKIIP APPLICATION
skiip gb 120
PX16
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342GD120-314CTV
Abstract: No abstract text available
Text: SKiiP 342GD120-314CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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342GD120-314CTV
342GD120-314CTV
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semikron skiip 400 gb
Abstract: 402GD061-358CTV
Text: SKiiP 402GD061-358CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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402GD061-358CTV
semikron skiip 400 gb
402GD061-358CTV
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semikron skiip 603GD122-3DUL
Abstract: SKiiP 603GD122-3DUL semikron skiip 31 603GD122-3DUL PX16 SKIIP 12 6pack
Text: SKiiP 603GD122-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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603GD122-3DUL
semikron skiip 603GD122-3DUL
SKiiP 603GD122-3DUL
semikron skiip 31
603GD122-3DUL
PX16
SKIIP 12 6pack
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power diode 200A
Abstract: No abstract text available
Text: SKiiP 413GD061-3DUL I. Power section 1 * SKiiP413GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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413GD061-3DUL
SKiiP413GB061CT
413GD061-3DUL
power diode 200A
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SKiiP613GB061CT
Abstract: skIIP613GB 613GD061-3DUL
Text: SKiiP 613GD061-3DUL I. Power section 1 * SKiiP613GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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613GD061-3DUL
SKiiP613GB061CT
613GD061-3DUL
skIIP613GB
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Untitled
Abstract: No abstract text available
Text: SKiiP 313GD122-3DUL I. Power section 1 * SKiiP313GB122CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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313GD122-3DUL
SKiiP313GB122CT
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skiip513gb
Abstract: SKIIP513GB122CT 513GD1223DU
Text: SKiiP 513GD122-3DUL I. Power section 1 * SKiiP513GB122CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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513GD122-3DUL
SKiiP513GB122CT
skiip513gb
513GD1223DU
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MKP capacitor
Abstract: SKIIP APPLICATION 803GD061-3DUW
Text: SKiiP 803GD061-3DUW I. Power section 1 * SKiiP803GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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803GD061-3DUW
SKiiP803GB061CT
803GD061-3DUW
MKP capacitor
SKIIP APPLICATION
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B6U 380
Abstract: semikron skiip 81 AN 15 T Module SKDH 146 16 Semikron semipont b6u SKDH 115 semikron skd 146 skiip 83 T-sensor 16L1 semikron skd 75
Text: SEMIPONT 5 SEMIPONT 6 45 mm Compared to SEMIPONT 5, SEMIPONT 6 additionally contains a brake chopper and temperature sensor. 45 mm 17 mm 81 mm 17 mm 100 mm ID = up to 140 A VRRM = up to 1800 V SEMIPONT 5/6 – new innovative packaging with SKiiP technology for bridge rectifier and softstarter.
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16-L1
16-L163
B6U 380
semikron skiip 81 AN 15 T
Module SKDH 146 16
Semikron semipont b6u
SKDH 115
semikron skd 146
skiip 83
T-sensor
16L1
semikron skd 75
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t skiip613gb121ct sensor s33 skiip613gb12 SKIIP613GB 613GD121-3DUL
Text: SKiiP 613GD121-3DUL I. Power section 1 * SKiiP613GB121CT per phase Absolute maximum ratings Symbol Conditions 1 Values IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 °C ICM IGBT, tp < 1 ms,Theat sink = 25°C
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613GD121-3DUL
SKiiP613GB121CT
SKiiP 83 AC 12 i t 1
SKiiP 83 AC 12 i t
sensor s33
skiip613gb12
SKIIP613GB
613GD121-3DUL
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Semikron sk 51
Abstract: nr. 9181 semikron skiip 83 SKP24 SKiiP2 skiip6 skiip 84 p1003 SK 618
Text: s e MIKRDN in n o v a tio n + service integrateci intelligent power subsystems Easy paralleling • 2, 3 o r 4 2 -p a c k halfbridge => m a x .1600 A rms o u tp u t current • hom og en ou s current d istrib u tio n Modular power section • 2 -p a c k (halfbridge)
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