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    SK 100 TRANSISTOR Search Results

    SK 100 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SK 100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK122

    Abstract: sk 122 SK122 1SK09 W1217 4TO220 A109 Leistungstransistor
    Text: A Strangkühlkörper ’ 3,2 17 20 14,8 K/W 10 29 8 7 29 K SK 145 20 TO 220 15,5 12 17,7 ’ 3,2 50 1000 mm TO 220 14 4,5 11,3 7 29 SK 145 37,5 TO 220 ’ 3,2 100 150 200 mm 50 100 150 200 mm SK 145 50 TO 220 ’ 3,2 3 12 ’ 3,2 14 14,75 50 17,7 4,5 11,3 4,5 SK 145 25 TO 220


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    SK 50 et 12

    Abstract: Dissipateur A123 TO-66-3 a9311 Heatsinks to-220 AA93
    Text: A U-Kühlkörper U-shaped heatsinks Dissipateurs en U K/W 25 9 20 15 15 1,5 SK 12 10 5 12 1000 mm 25 50 75 100 mm 50 100 150 200 mm 25 50 75 100 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 20 10 16 2 16 SK 192 18 14 12 14 50 1000 mm K/W 25


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    Heatsinks sk 489

    Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
    Text: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247


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    sk 473

    Abstract: SK5137 A461A SK43A SK113 2SK519 SK1100 SK-1360 3SK122 SK1856
    Text: A 1:1 Strangkühlkörper Dissipateurs extrudés Extruded heatsinks K/W 36 33 6,3 3,9 6,5 30 1,3 SK 522 27 10,6 12,6 24 15 25 37,5 50 1000 mm 15 30 45 50 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 26 24 22 20 8 SK 521 3 18 15,3 25 37,5 50 75 100 1000 mm


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    Untitled

    Abstract: No abstract text available
    Text: A U-Extruded heatsinks art. no. Rth [K/W] B 25 9 20 15 15 1,5 10 5 C 12 SK 12 . 25 50 100 [mm] 75 . please indicate: 1000 mm art. no. D Rth [K/W] 25 14 20 15 13 1,5 10 E 5 17 25 50 75 100 [mm] 100 150 200 [mm] SK 13 . please indicate: F . 25 35 mm


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    Heatsinks sk 489

    Abstract: SK481 W108 2SK514
    Text: Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 29,4 45 K/W 10 8 6 4 SK 489 M3 2 8 12 25 37,5 50 75 84 100 1000 mm 50 100 150 200 mm 50 100 150


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    SK 43

    Abstract: SK482 Heatsinks sk 499 heatsinks SK495 A85A
    Text: A Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 10,3 K/W 35 7 6 5 12,5 4 SK 482 3 2 1 M3 25 37,5 50 75 84 100 1000 mm 25 8 50 100 150 200 mm


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    SK 50 et 12

    Abstract: Heatsinks SK432 SK173 to 126 leistungstransistoren
    Text: 1:1 A Dissipateurs spéciaux 26 Special heatsinks 51 Spezialkühlkörper K/W 2,5 2,0 1,5 51,5 1,0 0,5 SK 46 50 100 150 200 mm 50 75 1000 mm Taraudages, trous débouchants et fentes de fixation suivant votre spécification. 12 ,5 Threads, through holes and fixing slots


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    thyristor st 103

    Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
    Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction


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    Varistoren lebensdauer

    Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
    Text: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen


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    semikron skpt

    Abstract: SKPT 11 semikron skpt 25 SK Ferrite Core semikron pulse transformer SEMIKRON type designation Semikron skpt 27 3/10 semikron Semiconductor Fuses current transformer semikron SKPT 25
    Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction


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    transistor k 525

    Abstract: transistor 525 transistor 526 Dissipateur SK s 55 Heatsinks to-220 sk 100 transistor
    Text: A AufsteckStrangkühlkörper Attachable extruded heatsinks Dissipateurs extrudés à enficher – dissipateurs extrudés avec dispositif de fixation à ressort intégré – montage facile en enfichant le dissipateur sur le transistor – transmission optimale de la chaleur


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    Untitled

    Abstract: No abstract text available
    Text: RF2423 I MICRODEVICES 100 mW SPREAD-SPECTRUM TRANSMITTER IC Typical Applications • Digital Communications Systems • Analog Communications Systems • Spread Spectrum Communications Systems • FM, AM , SSB, DSB Modulation • FSK, G M SK , Q P S K , D Q P SK , Q AM Modulation • Portable Battery Powered Equipment


    OCR Scan     		PDF RF2423 11Note 7341-D RF2423-5

    Semikron sk 100 dal

    Abstract: Semikron sk 75 SKHB10 Semikron sk 50 da SKHB 10 sk 100 transistor SK75DAL SK 300 CIRCUIT Semikron sk 100 semikron SK 50 DB 100 D
    Text: se MIKRO n Section 7: SEMITRANS Bipolar Power Transistor Modules Summary of types Type Ptot h21E I tf ts resistive load Tvj = 25 °C Circuit Page VcEVsus le VcEsat V A V lc A VcE = 5V lc A W US M-S SK 50 DA 100 D • SK 50 DA 120 D 1000 1200 50 50 2,5 3


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    T-047

    Abstract: SK4909 SK9032 SK3996 SK9031 T047 SK3960 SK3959 SK3961 SK9034
    Text: THOMSON/ ESQ DISTRIBUTOR SfiE D BIPOLAR TRANSISTORS • TDStjfl73 0 0 0 4 Ö 2 7 TOO ■ TCSK . coni Maximum Ratings TCE Type Breakdown Voltages Device Polarity <S Material Application ‘complementary äewce type Device Power Dissipato. Collector Current


    OCR Scan     		PDF TD3bfl73 D0D4fl27 SK3949 SK3948 SK3958 SK3959 SK3959 SK3958 SK3960 SK3961 T-047 SK4909 SK9032 SK3996 SK9031 T047 SK3961 SK9034

    SK9042

    Abstract: SK9134 SK9041 SK9111 SK9085 sk9131 SK9109 SK9107 SK9110 SK9115
    Text: T H OM SO N/ D I S T R I B U T O R [ml] SflE D • T02bfl73 O Q O H a P T ÖÖ3 ■ TCSK BIPOLAR TRANSISTORS cour. Maximum Ratings Breakdown Voltages Device Polarity & TICE Type Application Material ’complementary device type Device Power Dissipatn.


    OCR Scan     		PDF 02Ufl73 SK9040 SK9041 SK9042 SK9042 SK9041 SK9076 SK3357 SK9085 SK9107 SK9134 SK9111 sk9131 SK9109 SK9110 SK9115

    transistor mpsa20 equivalent

    Abstract: bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five MPS-K22
    Text: 2 SILICON M P S - A M P S - K 2 M P S - K 2 2 , M P S - 2 K I , NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANN U LAR TRANSISTO RS . . designed fo r u n In audio, radio, a n d television applications. e e M P S - K 2 0 , M P S - K 2 1 , M P S - K 2 2 are 3, 5 and 9


    OCR Scan     		PDF MPS-A20 MPS-K20, MPS-K22 MPS-K21, MPS-K22 MPS-A20, transistor mpsa20 equivalent bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201

    2SK19Y

    Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 2SK19Y C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684

    sk9134

    Abstract: SK9133 SK9085 SK9362 SK9117 rca 036 SK9134/181 SK9362/376 sk9363 SK9116
    Text: THOMSON/ DISTRIBUTOR GTE D | “ìGSbflTa □ □ □ 3 3 b ci ñ | T-%Z - I "7 3ipolar Transistors cont’d CHARACTERISTICS LIMIT CONDITIONS BREAKDOWN VOLTAGE RCA Type Polarity and Material - Device D illipation Pi W SK9076/187A SK 9 0 85/379f PNPSi N PN Si


    OCR Scan     		PDF 33bcl SK9076/187A T0-202M T-039 SK9085/379f O-220 T-036 SK9112/377t T0-220 sk9134 SK9133 SK9085 SK9362 SK9117 rca 036 SK9134/181 SK9362/376 sk9363 SK9116

    AUY 10

    Abstract: AUY19 legiert Q62901-B11-A pnptransistor W130 AUY20V PNP-Germanium
    Text: PNP-Transistoren für Schalteranw endungen bis 3 A A U Y 19 A U Y 20 A U Y 19, A U Y 20 sind legierte PNP-Germanium-Transistoren im Gehäuse 3 A 2 DIN 41872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren sind besonders für den Einsatz als NF-Leistungsschalter geeignet.


    OCR Scan     		PDF Q62901-B11-A Q62901-B13-B Q60120-Y19-C Q62901-B13-B Q60120-Y19-D Q62901-B11-A AUY19 Q60120-Y19-E Q60120-Y20-C Q60120-Y20-D AUY 10 legiert pnptransistor W130 AUY20V PNP-Germanium

    Untitled

    Abstract: No abstract text available
    Text: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:


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    Untitled

    Abstract: No abstract text available
    Text: BCX 24 N P N -S iliziu m N F -T ran sisto r V o r lä u f ig e D a te n B C X 24 ist ein epitaktischer NPN-Silizium -Planar-Transistor im Metall-Gehäuse 18 A 3 D IN 41 8 7 6 T O -1 8 . Besonders in N F -V o r- und Treiberstufen, sow ie für universelle A n ­


    OCR Scan     		PDF Q62702-C750-S20