1n4109-1
Abstract: No abstract text available
Text: 1N4106-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX TECHNICAL DATA DATASHEET 5095, Rev A Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4106-1/UR -1 1N4107-1/UR -1 1N4108-1/UR -1
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1N4106-1/UR-1
1N4135-1/UR-1
1N4106-1/UR
1N4107-1/UR
1N4108-1/UR
1N4109-1/UR
1N4110-1/UR
1N4111-1/UR
1N4112-1/UR
1N4113-1/UR
1n4109-1
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1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
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1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
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Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
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1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
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SV6102
Abstract: 1N6121A
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. A 1N61xx Bi-Polar Transient Voltage Suppressor Diode, 500W *SJ61xx / *SX61xx / *SV61xx Hermetic, non-cavity glass package *SS61xx Metallurgically bonded Operating and Storage Temperature: -55oC to +175oC
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-55oC
175oC
1N6102A/US
1N6137A/US
1N61xx
SJ61xx
SX61xx
SV61xx
SS61xx
MIL-PRF-19500
SV6102
1N6121A
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
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1N4465
Abstract: 1N4474 1N4475 sensitron 1n4470 1N4472 1N4488 1N4477 1N4471 1N4469 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4460 thru 1N4496 1N4460US thru 1N4496US TECHNICAL DATA DATA SHEET 5080, Rev B.2 1N44xx *SJ44xx / *SX44xx / *SV44xx Zener 1.5W DIODE Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4460
1N4496
1N4460US
1N4496US
1N44xx
-65oC
175oC.
200oC.
SJ44xx
1N4465
1N4474
1N4475
sensitron 1n4470
1N4472
1N4488
1N4477
1N4471
1N4469
1N4479
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1N4460
Abstract: zener JANTX 1N4467 1N4474 1N4475 1N4477 1N4471 1N4469 1N4467 1N4460US
Text: 1N4460/US, 1N4461/US, 1N4467/US thru 1N4496/US Standard ZENER DIODES SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5080, Rev B.3 AVAILABLE AS 1N JAN, JANTX, JANTXV JANS JAN EQUIVALENT * SJ44XX*, SX44XX*, SV44XX* SS44XX* Zener 1.5W DIODE • Ultra-low reverse leakage current
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1N4460/US,
1N4461/US,
1N4467/US
1N4496/US
SJ44XX*
SX44XX*
SV44XX*
SS44XX*
-65oC
175oC.
1N4460
zener
JANTX 1N4467
1N4474
1N4475
1N4477
1N4471
1N4469
1N4467
1N4460US
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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74FR2244
Abstract: 74FR2244PC 74FR2244SC 74FR2244SJ C1995 M20D
Text: 74FR2244 Octal Buffer Line Driver with 25X Series Resistors in the Outputs General Description Features The FR2244 is a non-inverting octal buffer and line driver designed to drive capacitive inputs of MOS memory devices address and clock lines or act as a low undershoot general purpose bus driver
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74FR2244
FR2244
74FR2244PC
20-Lead
74FR2244SC
20-3A
74FR2244
74FR2244PC
74FR2244SC
74FR2244SJ
C1995
M20D
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RF2 2A 250V
Abstract: No abstract text available
Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .
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EN50205
UL60947-4-1A
E55996
LR35144
EN50/
EP1471-0
RF2 2A 250V
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1N6138
Abstract: 1n6160a
Text: 1N6102A/US thru 1N6173A/US Standard HERMETIC BI-DIRETIONAL TRANSIENT SUPPRESSOR SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5072, REV. A.2 AVAILABLE AS 1N61xxA/US JAN EQUIVALENT: SJ61xxA/US* SV61xxA/US* SX61xxA/US* DESCRIPTION: This voidless hermetically sealed bidirectional transient voltage suppressor diode is targeted for
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1N6102A/US
1N6173A/US
1N61xxA/US
SJ61xxA/US*
SV61xxA/US*
SX61xxA/US*
1N6103/US
1N6137A/US
1N6138
1n6160a
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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SK3GF06
Abstract: SK4F4 SK4G sk4g4 sk4f 3GL06 SK3GL01 BB71 SK4F4/04
Text: SEMIKRON INC 3 bE D • fil3bb71 0 0 0 2 7 0 b -f'03- c, 10 A V rrm | SEMIKRON Fast Recovery Rectifier Diodes maximum values for continuous operation) Ifr m s V rsm 7 »SEKG 10 A i Ifa v (sin. 180; T re t = SK3GF SK3GL 1 0 5 °C ,L = 10 mm) 3A 2,9 A 100 SK3GF01
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fil3bb71
SK3GL01
SK3GF01
T-03-/6'
SK3GF06
SK4F4
SK4G
sk4g4
sk4f
3GL06
BB71
SK4F4/04
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hPND
Abstract: No abstract text available
Text: • WfT\ 44475Ö4 □OCHb'ia 3T4 ■ H P A HEULETT-PACKAR] / CflPNTS blE J> HEWLETT L Ä I PACKARD B eam L ead PIN D iod es for P h a sed A rrays and S w itch es Technical Data HPND-4018 HPND-4028 HPND-4038 Features 680 27) • Low C ap acitan ce 0.025 pF Maximum at 1 MHz
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HPND-4018
HPND-4028
HPND-4038
HPND-4018,
hPND
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
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Untitled
Abstract: No abstract text available
Text: ESJC 30|4 . 5 k V , 7 . 2 k V 3f*—K : Outline Drawings HIGH VOLTAGE SILICON DIODE E S J C 3 0 * , y | # - 5 i a f f '> U 3 ^ 'y 7 , 4 r X iJ i+ - > i» |jg t c T iiih L f c a E S JC 30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a
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ESJC30-05
l95t/R
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TPM-M,-H,-24,-2H lo V r rm DC output cu rre n t. 150A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type
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RM75TPM-M
E80276
E80271
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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Untitled
Abstract: No abstract text available
Text: Bulletin 127140 rev. B 09/97 Inte rn ation al IS R Rectifier IRK.56, .71 SERIES NEW ADD-A-pak Power Modules STANDARD DIODES Features 60 A 80 A • Electrically isolated: DBC base plate ■ 3500 VnMS isolating voltage ■ Standard JED EC package ■ Simplified mechanical designs, rapid assembly
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ULE78996
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U2Z12
Abstract: U2Z13 U2Z15 U2Z16 U2Z18 U2Z20 U2Z22
Text: T O S H IB A U2Z12~U2Z100 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE U2Z12-U2Z100 CONSTANT VOLTAGE REGULATION Unit in mm INDUSTRIAL USE TRANSIENT SUPPRESSORS NOISE LIMITTER CATHODE MARK 1 • Average Power Dissipation : P = 2W • Zener Voltage • Surface Mounting Plastic Mold Package
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U2Z12-U2Z100
U2Z12)
961001EAA2
U2Z51
U2Z68
U2Z75
U2Z82
U2Z100
961001EAA2'
U2Z12
U2Z13
U2Z15
U2Z16
U2Z18
U2Z20
U2Z22
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954A
Abstract: westcode n 600 ch 14 westcode n 600 ch 12 INR 14D 12D100 WESTCODE
Text: - ^/iDi \a/f T rn w t aQiu u un cf \Th SEMICONDUCTORS T E C H N IC A L P U B L IC A T IO N D P55 ISSUE1 1 1080 Msrch, Stud-Base Silicon Rectifier Diodes Type PCN/PCRÛ55 75amperes average: up to 1600 volts Vr r m R A T IN G S Maximum values at 175*0 Tj unless stated otherwise
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PCN/PCR055
75arnperes
110cC
3929A3s
3S64A3
17BaC
954A
westcode n 600 ch 14
westcode n 600 ch 12
INR 14D
12D100
WESTCODE
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transistor A431
Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
CA3036
a106 transistor
A431 transistor
d16P4
4JD12X009
A431
BFR14
MA3232
GI3793
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