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    SINGLE PHASE SILICON BRIDGE Search Results

    SINGLE PHASE SILICON BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S141AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Phase Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation

    SINGLE PHASE SILICON BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SHB681123E

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB681123E 2500-VOLT, 15000-VOLT SHB681123E PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB636053E 2500-VOLT, 15000-VOLT PDF

    SHB636053E

    Abstract: No abstract text available
    Text: SENSITRON SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB636053E 2500-VOLT, 15000-VOLT SHB636053E PDF

    175C

    Abstract: MO-078
    Text: SENSITRON_ SEMICONDUCTOR SHB601031E Technical Data Datasheet 5066, Rev. A Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:


    Original     		SHB601031E 600-VOLT, O-258 MO-078) 175C MO-078 PDF

    SHB636053E

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB636053E 2500-VOLT, 15000-VOLT SHB636053E PDF

    SHB601052E

    Abstract: No abstract text available
    Text: SENSITRON_ SEMICONDUCTOR SHB601052E Technical Data Datasheet 4308 REV. C Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:


    Original     		SHB601052E 1200-VOLT, O-258 MO-078) SHB601052E PDF

    175C

    Abstract: SHB681123E
    Text: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB681123E 2500-VOLT, 15000-VOLT 175C SHB681123E PDF

    175C

    Abstract: SHB636053E
    Text: SENSITRON_ SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev B HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB636053E 2500-VOLT, 15000-VOLT 175C SHB636053E PDF

    SHB601051E

    Abstract: 175C
    Text: SENSITRON_ SEMICONDUCTOR SHB601051E Technical Data Datasheet 5008 REV. B Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:


    Original     		SHB601051E 600-VOLT, O-258 MO-078) SHB601051E 175C PDF

    TB810

    Abstract: TB88 TB805 TB81 epoxy 5000 taitron TB82 TB84 Silicon bridge rectifier 200 V, 4 A
    Text: 8.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB805 – TB810 8.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension


    Original     		TB805 TB810 MIL-STD-202E TB810 TB88 TB805 TB81 epoxy 5000 taitron TB82 TB84 Silicon bridge rectifier 200 V, 4 A PDF

    tb66

    Abstract: TB610 TB-610 TB605 TB61 TB62 TB64 high voltage bridge rectifier TB-62
    Text: 6.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB605 – TB610 6.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension


    Original     		TB605 TB610 MIL-STD-202E tb66 TB610 TB-610 TB605 TB61 TB62 TB64 high voltage bridge rectifier TB-62 PDF

    TB1010M

    Abstract: TB106M TB102m TB1010 TB1005M TB101M TB104M
    Text: 10.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB1005M – TB1010M 10.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension


    Original     		TB1005M TB1010M MIL-STD-202E TB101M TB102M TB104M TB106M TB108M TB1010M TB106M TB102m TB1010 TB1005M TB101M TB104M PDF

    TB3100

    Abstract: TB305 TB31 TB32 TB34 Bridge Rectifier, 30A TB310
    Text: 3.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB305 – TB3100 3.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds, at 5 lbs. 2.3kg tension


    Original     		TB305 TB3100 MIL-STD-202E, TB310 TB3100 TB305 TB31 TB32 TB34 Bridge Rectifier, 30A TB310 PDF

    SHB601112E

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHB601112E TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4289, Rev. - SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-PIN TO-258 MO-078 PACKAGE


    Original     		SHB601112E 1200-VOLT, O-258 MO-078) SHB601112E PDF

    175C

    Abstract: SHB601112E
    Text: SENSITRON SEMICONDUCTOR SHB601112E TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4289, Rev. B SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-PIN TO-258 MO-078 PACKAGE


    Original     		SHB601112E 1200-VOLT, O-258 MO-078) 175C SHB601112E PDF

    SHB601051E

    Abstract: No abstract text available
    Text: SENSITRON SHB601051E Technical Data Datasheet 5008 REV. - Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB601051E 600-VOLT, O-258 MO-078) SHB601051E PDF

    semiconductor

    Abstract: No abstract text available
    Text: SENSITRON SHB601031E Technical Data Datasheet 5066, Rev. - Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB601031E 600-VOLT, O-258 MO-078) semiconductor PDF

    SHB601052E

    Abstract: No abstract text available
    Text: SENSITRON SHB601052E Technical Data Datasheet 4308 REV. B Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB601052E 1200-VOLT, O-258 MO-078) SHB601052E PDF

    MO-078

    Abstract: on 4308
    Text: SHB601052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4308 REV. A Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES


    Original     		SHB601052E 1200-VOLT, O-258 MO-078) MO-078 on 4308 PDF

    DBB04

    Abstract: DBB04C DBB04G SANYO RECTIFIER
    Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.


    Original     		EN2793A DBB04 DBB04] DBB04C DBB04G DBB04 DBB04C DBB04G SANYO RECTIFIER PDF

    FL406

    Abstract: FL402 FL401 FL400 600 011
    Text: FL400 Series Single Phase Bridge Rectifiers Features: • In-line miniature single phase silicon bridge. • Surge overload rating: 200 Amperes peak. • Ideal for printed circuit board. • Reliable low cost construction utilizing moulded plastic technique.


    Original     		FL400 MIL-STD-202, FL401 FL402 FL406 FL406 FL402 FL401 600 011 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.


    Original     		EN2793A DBB04 DBB04] DBB04C DBB04G PDF

    DBB04

    Abstract: DBB04C DBB04G
    Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.


    Original     		EN2793A DBB04 DBB04] DBB04C DBB04G DBB04 DBB04C DBB04G PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.


    Original     		EN2793A DBB04 DBB04] DBB04C DBB04G PDF