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    SIN DIODE Search Results

    SIN DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SIN DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRC1746

    Abstract: STM1680
    Text: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 111 ANALOG W DEVICES HighPowerOutput" Hybrid Digital-to-Synchro/Resolver Converters DRC1M~DRC1746 I I FUNCTIONAL ,-,sv BLOCK DIAGRAM +15VIP, -1SV SIN SENSE SIN 1M SIN ",t SIN "' SIG GNP cDS SENSE COS {2A SIN ",t COS "'


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    PDF DRC1746 16-Bit STMI683 36OHz-2 1360Hz STM1683 440Hz STMI663 247Hz DRC1746 STM1680

    2n3773 power Amplifier circuit diagrams

    Abstract: AD534 vacuum tube applications data book 759N Non-Linear Circuits Handbook Analog Devices 2N3773 audio amplifier diagram
    Text: wt sin <P\ "-o" \J \J ~ sin wt Yo . wt cos q, + cos \s•~' •n wt cos wt . q,\ Sl~' . 2wt cos q, +" _\I_,_,J3.- \SI~' \J . t sin <P\ t coS q, + Sll' 2ul \j \J~ \\.'_cOS 2 W £o" :-.g) \J \J~ \11'11'\-IP.S£\ cos <P " Of 1'\-lp.S£\ "-o " 20 \J \J~ l's0° ol.ll


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    PDF rs10/Lt 2n3773 power Amplifier circuit diagrams AD534 vacuum tube applications data book 759N Non-Linear Circuits Handbook Analog Devices 2N3773 audio amplifier diagram

    diode 47c

    Abstract: No abstract text available
    Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)


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    PDF C/125 diode 47c

    V004

    Abstract: SEMIKRON welding semikron skn 50 SKN6000
    Text: Rectifier Diodes VRSM VRRM V 4000 A 50 °C 6000 A (85 °C) 200 400 600 SKN 4000/02 SKN 4000/04 SKN 4000/06 SKN 6000/02 SKN 6000/04 SKN 6000/06 IFAV (sin. 180; Tcase = .) Symbol Conditions IFAV sin. 180;Tcase = 50 °C;DSC1) = 85 °C;DSC1) = 100 °C;DSC1)


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    DI-2000

    Abstract: semikron skke 260
    Text: VRSM VRRM IFRMS maximum values for continuous operation 450 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 220 A 1100 SKKE 301 F 11 1200 SKKE 301 F 12 Symbol Conditions SEMIPACK 2 Fast Diode1) Modules SKKE 301 F SKKE 301 F Units 260 A IFAV sin. 180; Tcase = 65 °C


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    PDF SKKE301F XLS-19 XLS-18 DI-2000 semikron skke 260

    KKE301F

    Abstract: No abstract text available
    Text: VRSM VRRM IFRMS maximum values for continuous operation 450 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 220 A 1100 SKKE 301 F 11 1200 SKKE 301 F 12 Symbol Conditions SEMIPACK 2 Fast Diode1) Modules SKKE 301 F SKKE 301 F Units 260 A IFAV sin. 180; Tcase = 65 °C


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    PDF KKE301F KKE301F

    0496B

    Abstract: A2S30 S3050
    Text: VRSM VRRM IFRMS maximum values for continuous operation 110 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 58 A 1100 SKKD 75 F 11 1200 SKKD 75 F 12 Symbol Conditions SEMIPACK 2 Fast Diode1) Modules SKKD 75 F Preliminary data SKKD 75 F Units IFAV sin. 180; Tcase = 65 °C


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    Untitled

    Abstract: No abstract text available
    Text: SKCD 11 C 120 I3 Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.07 mA 1200 V Tj = 25 °C 130 A Tj = 150 °C 130 A Tj = 150 °C, tp = 10 ms, sin 180° 85 A²s 150 °C IFSM 10 ms sin 180° i²t Tjmax CAL-DIODE Electrical Characteristics


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    Untitled

    Abstract: No abstract text available
    Text: SKCD 11 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.07 mA 1200 V Tj = 25 °C 170 A Tj = 150 °C 140 A Tj = 150 °C, tp = 10 ms, sin 180° 98 A²s 150 °C IFSM 10 ms sin 180° i²t Tjmax CAL-DIODE Electrical Characteristics


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    KKD060F

    Abstract: No abstract text available
    Text: VRSM VRRM IFRMS maximum values for continuous operation 110 A V IFAV (sin. 180; Tcase = 65 °C; 50 Hz) 70 A 1600 SKKD 60 F 16 1700 SKKD 60 F 17 Symbol Conditions SEMIPACK 2 Fast Diode 1) Modules SKKD 60 F SKKD 60 F Units 58 70 A A IFAV sin. 180; Tcase = 85 °C


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    PDF O-240 KKD060F

    Untitled

    Abstract: No abstract text available
    Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 61 C 170 I 1700 SKCD 61C 170 I 7,8 x 7,8 mm; 51 A4); 1700 V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 8 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)


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    PDF C/125

    semikron

    Abstract: W0024 SKN400002 w 129 semikron skn 50 skn diodes
    Text: Rectifier Diodes VRSM VRRM V 4000 A 50 °C 6000 A (85 °C) 200 400 600 SKN 4000/02 SKN 4000/04 SKN 4000/06 SKN 6000/02 SKN 6000/04 SKN 6000/06 Symbol IFAV IFAV (sin. 180; Tcase = .) Conditions 1) sin. 180;Tcase = 50 °C;DSC = 85 °C;DSC1) = 100 °C;DSC1)


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    semipack

    Abstract: SEMIKRON INTERNATIONAL 90F06
    Text: VRSM VRRM IFRMS maximum values for continuous operation 150 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions SEMIPACK 1 Fast Diode1) Modules SKKD 90 F Preliminary Data SKKD 90 F Units IFAV Tcase = 85 °C; sin. 180


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    PDF D-90253 semipack SEMIKRON INTERNATIONAL 90F06

    1200VPEAK

    Abstract: KKD075F Welder
    Text: VRSM VRRM IFRMS maximum values for continuous operation 110 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 58 A 1100 SKKD 75 F 11 1200 SKKD 75 F 12 Symbol Conditions SEMIPACK 2 Fast Diode1) Modules SKKD 75 F SKKD 75 F Units 70 A IFAV sin. 180; Tcase = 65 °C


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    PDF O-240 1200VPEAK KKD075F Welder

    KKD090F

    Abstract: No abstract text available
    Text: VRSM VRRM IFRMS maximum values for continuous operation 150 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions SEMIPACK 1 Fast Diode1) Modules SKKD 90 F Preliminary Data SKKD 90 F Units 90 A IFAV Tcase = 85 °C; sin. 180


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    PDF O-240 KKD090F

    semikron skke 400/16

    Abstract: Diode semikron skke 400 Diode semikron skke skke
    Text: SEMIPACK 4 Diode Modules IFAV sin. 180; Tcase = 100 °C 430 A VRSM VRRM V SKKE 400 1200 1600 SKKE 400/12 SKKE 400/16 2000 2400 SKKE 400/20 SKKE 400/24 1) Symbol Conditions IFAV sin. 180; Tcase = 85 °C 100 °C IFSM Tvj = 25 °C Tvj = 150 °C i 2t Tvj = 25 °C


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    Diode semikron skke 120

    Abstract: SEMiPACK
    Text: VRSM VRRM IFRMS maximum values for continuous operation 220 A V IFAV (sin. 180; Tcase = 65 °C; 50 Hz) 140 A 1600 SKKE 120 F 16 1700 SKKE 120 F 17 Symbol Conditions SEMIPACK 2 Fast Diode 1) Modules SKKE 120 F SKKE 120 F Units 116 140 A A IFAV sin. 180; Tcase = 85 °C


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    semikron skke 400/16

    Abstract: Diode semikron skke 400 semipack 1
    Text: VRSM IFAV sin. 180; Tcase = 100 °C SEMIPACK 4 VRRM V 430 A Diode Modules 1200 SKKE 400/12 1600 SKKE 400/16 2000 SKKE 400/20 2400 SKKE 400/24 SKKE 400 1) Symbol Conditions SKKE 400 IFAV sin. 180; Tcase = 85 °C 100 °C IFSM Tvj = 25 °C Tvj = 150 °C 12 000 A


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    PDF Nm/44 Nm/150 semikron skke 400/16 Diode semikron skke 400 semipack 1

    IGBT GT 1081

    Abstract: No abstract text available
    Text: IGBT and GCT - Freewheeling Diodes t Type 1 w j V D R M V w V (D )D 1 * 1 i l(F S M ) I Freilaufdioden w Jfdt n V(f/I( fm) kV kA A2s V/2,5kA Tc=25 sin,10ms sin, 10ms Tvj=Tvi max typ. Tvj max Tvj max sin i r\ l(R M ) Q ( rr) A mAs 73T/Zux 1 (-di/dt)com d


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    PDF 73T/Zux IGBT GT 1081

    Semikron sK1 04

    Abstract: semikron sk1 semikron SK3 Semikron sK 30 mh 60 SK 30 MH 60 06sk1 g04sk semikron SK3 04 15 semikron SK3 04
    Text: s e M IKRD n V rsm V rrm Ifrms maximum values for continuous operation 3A | 6,7 A V Ifav (sin. 180, Tref = 105 °C, L = 10 mm) 4,3 A 1,9 A 200 400 600 800 1000 1200 Symbol Conditions I fav Tref = 130 °C; L = 10 mm; sin. 180 Tamb = 45 °C; sin. 180; p.c.b. 50 x 50 mm


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    PDF 1111I Semikron sK1 04 semikron sk1 semikron SK3 Semikron sK 30 mh 60 SK 30 MH 60 06sk1 g04sk semikron SK3 04 15 semikron SK3 04

    Untitled

    Abstract: No abstract text available
    Text: S EMI KRO N 15E D | INC Q0Qlfl?3 T T-oz-Z3> VflSM Vrrm V If a v (sin. 180; 420 A SKN 420 F 18 SKN 420 F 20 SKN 420 F 22 SKN 420 F 25 SKN 300 F 08 SKN 300 F 10 - - Conditions Ifav sin. 180; DSC; Tease 500 Hz SKN 300 F 85 °C; sin.180; Rthha = 0,05 °C/W;


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    PDF 00aifl7M aseE18 DO-200

    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON Vrsm V rrm V Rectifier Diodes Ifav sin. 180; Tease - •■• 4000 A (50 °C) 200 400 600 SKN 4000/02 SKN 6000/02 SKN 4000/04 SKN 6000/04 SKN 4000/06 SKN 6000/06 Symbol Conditions Ifav sin. 180;Tcase= 50°C;DSC1) = 85 °C;DSC1) = 100 °C;DSC1)


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    PDF B8-45 SKWD7000 fll3bb71

    Untitled

    Abstract: No abstract text available
    Text: sem ikro n V rsm Ifa v Rectifier Diodes sin. 180; Tease = 85 >C SKN 450 SKN 501 SKN 870 V rrm 500 A V 400 - 800 - 1200 - 1400 - 1600 - 1800 SKN 450/18 SKN 450/20 SKN 450/22 2000 2200 2400 Ifsm i2t Qrr Irm Ir sin. 180; DSC; (Tease = . . .) = 25 °C; 10 ms


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    b845

    Abstract: B-845 A2S60 MS3100A mikron
    Text: se MIKROn V rsm Ifa V sin. 180; Tease Rectifier Diodes = 75 °C SKN 3000 SKN 3400 V rrm 1200 - 1400 - 1600 - 1800 - 2600 2800 3200 3600 Symbol Conditions If a v sin.180; T Vj T Vj i2t T V| T Vj Ir SKN 3400/12 SKN 3400/14 SKN 3400/16 SKN 3400/18 SKN 3000/22


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    PDF B8-45 b845 B-845 A2S60 MS3100A mikron