Untitled
Abstract: No abstract text available
Text: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
|
73851
Abstract: No abstract text available
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282
SC75-6
SiP4282-3
08-Apr-05
73851
|
SC75
Abstract: SC-75 SiP4282A
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
SC75
SC-75
|
SUD45P03-15
Abstract: No abstract text available
Text: SPICE Device Model SUD45P03-15 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUD45P03-15
18-Jul-08
SUD45P03-15
|
SUD45P03-10
Abstract: No abstract text available
Text: SPICE Device Model SUD45P03-10 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUD45P03-10
18-Jul-08
SUD45P03-10
|
SUD30N03-30
Abstract: No abstract text available
Text: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUD30N03-30
18-Jul-08
SUD30N03-30
|
Untitled
Abstract: No abstract text available
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
08-Apr-05
|
73851
Abstract: SC75 SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SiP4282DVP-1-T1-E3
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282
SC75-6
SiP4282-3
18-Jul-08
73851
SC75
SC-75
SiP4282-1-T1-E3
SiP4282-3-T1-E3
SiP4282DVP-1-T1-E3
|
Untitled
Abstract: No abstract text available
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
08-Apr-05
|
TR1111
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUP/SUB60N06-18
18-Jul-08
TR1111
|
SUD45N05-20L
Abstract: No abstract text available
Text: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUD45N05-20L
18-Jul-08
SUD45N05-20L
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUP/SUB75P03-08
18-Jul-08
|
SiP4282DVP-1-T1-E3
Abstract: SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SC75 JAN p-channel mosfet transistor low power
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that
|
Original
|
PDF
|
SiP4282
SC75-6
SiP4282-3
08-Apr-05
SiP4282DVP-1-T1-E3
SC-75
SiP4282-1-T1-E3
SiP4282-3-T1-E3
SC75
JAN p-channel mosfet transistor low power
|
AN804
Abstract: TP0202T
Text: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features
|
Original
|
PDF
|
TP0202T
AN804.
44505--Rev
AN804
TP0202T
|
|
|
67031
Abstract: Si5711EDU-T1-GE3 Si5711EDU si5711
Text: Si5711EDU Vishay Siliconix P-Channel 20 V D-S MOSFET and PNP Low VCE(sat) Switching Transistor FEATURES MOSFET - PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5711EDU
2002/95/EC
11-Mar-11
67031
Si5711EDU-T1-GE3
si5711
|
TN2010T
Abstract: No abstract text available
Text: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
|
Original
|
PDF
|
TN2010T
P-38212--Rev.
TN2010T
|
A37 diode
Abstract: diode 66a TN0201T
Text: TN0201T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1.0 to 3.0 0.3 Features Benefits Applications D D D D D D D D D D D Direct LogicĆLevel Interface: TTL/CMOS
|
Original
|
PDF
|
TN0201T
P-38212--Rev.
A37 diode
diode 66a
TN0201T
|
52426
Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
Text: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS
|
Original
|
PDF
|
TN0201T
O-236
OT-23V
S-52426--Rev.
14-Apr-97
52426
siliconix transistor marking
TN0201T
n1 marking
marking codes n1 transistors sot-23
sot23 marking code 02
|
SIP21110
Abstract: No abstract text available
Text: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An Ultra low ground current and low dropout
|
Original
|
PDF
|
SiP21110
250-mA
TSOT23-5L
08-Apr-05
|
SIP21110
Abstract: SIP21110DT
Text: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An Ultra low ground current and low dropout
|
Original
|
PDF
|
SiP21110
250-mA
18-Jul-08
SIP21110DT
|
SiP21110
Abstract: SIP21110DT SIP21110DT-T1-E3 TSOT23-5L a 1046 transistor
Text: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low dropout
|
Original
|
PDF
|
SiP21110
250-mA
18-Jul-08
SIP21110DT
SIP21110DT-T1-E3
TSOT23-5L
a 1046 transistor
|
SiP21107DT-46-E3
Abstract: SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L E3- marking
Text: New Product SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator APPLICATIONS • • • • • • FEATURES • TSC75-6L Package 1.6 x 1.6 x 0.6 mm , and Cellular Phones, Wireless Handsets PDAs MP3 Players Digital Cameras Pagers Wireless Modem
|
Original
|
PDF
|
SiP21106/7/8
150-mA
TSC75-6L
SiP21106
SiP21107
S-70067
22-Jan-07
SiP21107DT-46-E3
SiP21108
TSOT23-5L
E3- marking
|
TSC75-6L
Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSOT23-5L sc70-5lpackage
Text: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator APPLICATIONS • • • • • • FEATURES • SC70-5L 2.1 x 2.1 x 0.95 mm • TSOT23-5L (3.05 x 2.85 x 1.0 mm) • TSC75-6L Package (1.6 x 1.6 x 0.55 mm), Cellular Phones, Wireless Handsets
|
Original
|
PDF
|
SiP21106/7/8
150-mA
SC70-5L
TSOT23-5L
TSC75-6L
TSOT23-5L
SC70-5L
SiP21106
08-Apr-05
SiP21107
SiP21108
sc70-5lpackage
|
Untitled
Abstract: No abstract text available
Text: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.
|
OCR Scan
|
PDF
|
TP0202T
AN804,
-44505--Rev
|
