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    SILICONIX FET GEOMETRY Search Results

    SILICONIX FET GEOMETRY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy

    SILICONIX FET GEOMETRY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siliconix - j201

    Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
    Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,


    Original     		PDF AN103 SST112 2N4392 2N4393 SST/J113 2N4392, SST/J112 2N4393, SST/J113 siliconix - j201 j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    SD5000

    Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
    Text: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 2N4959 MRF904 AN301 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE

    FET J202

    Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet

    2N4393

    Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A 2N4393 FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339

    FET J202

    Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392

    fet vcr compatible

    Abstract: jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note 2N5486 PN4119A
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltage-controlled resistor VCR may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note 2N5486 PN4119A

    application note jfet J111 transistor

    Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltage-controlled resistor VCR may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N

    fet vcr compatible

    Abstract: application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet

    2N5088 equivalent

    Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor

    fet vcr compatible

    Abstract: 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3
    Text: AN105 Siliconix FETs As VoltageĆControlled Resistors A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404

    transistor fn 1016

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor fn 1016 N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets

    AN73-1 fet

    Abstract: AN73-1 9L05 siliconix AN73-7 Siliconix Application Note jpad100 jfet AN73 J174-7 VCR3P 2n Siliconix FET
    Text: voltage-controlled resistor FETs designed for • • • H Siliconix P rformanc Curv _$ NT, PSA See Section t~CA, ~, NPA, Signal AHenuators • Small Filters • Amplifier Control • Oscillator Gain Amplitude Control • TO-18 MODIFIED TO-72 (MODIFIED)


    Original     		PDF

    siliconix sd210

    Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 2N4959 siliconix sd210 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    siliconix FET DESIGN

    Abstract: Siliconix FET Siliconix "fet" 2N4340 2N4341 2N4869 high impedance current sources -rs siliconix DESIGN idea high voltage constant current source Siliconix design
    Text: DI71-1 H Siliconix DESIGN IDEA The FET Constant Current Source INTRODUCTION The combination of low associated operating voltage and high output impedance make the FET attractive as a con­ stant current source. An adjustable current source may be built with a FET, a variable resistor and a small battery,


    OCR Scan     		PDF 2N4340 2N4341 siliconix FET DESIGN Siliconix FET Siliconix "fet" 2N4869 high impedance current sources -rs siliconix DESIGN idea high voltage constant current source Siliconix design

    transistor FN 1016

    Abstract: siliconix fet Siliconix FET Design Catalog siliconix FET DESIGN Siliconix JFET Siliconix "fet" siliconix catalog ag2 transistor Siliconix Application Note U311
    Text: s S ilic o n ix APPLICATION NOTE Audio-Frequency Noise Characteristics of Junction FETs INTRODUCTION factor, a source resistor R q , w ith a therm al noise voltage e j , is added to the circuit. The purpose o f this application note is to identify and characterize audio frequency noise in junction field-effect


    OCR Scan     		PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    J201 Replacement

    Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
    Text: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z


    OCR Scan     		PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N3955 2N4339 2N5546 J201 Replacement fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304

    j201 jfet

    Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
    Text: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z


    OCR Scan     		PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N4139 2N3822 2N4861A 2N4861A j201 jfet 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393