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    SILICONIX FET AUDIO AMPLIFIER Search Results

    SILICONIX FET AUDIO AMPLIFIER Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    AV-THLIN2RCAM-005 Amphenol Cables on Demand Amphenol AV-THLIN2RCAM-005 Thin-line Single RCA Coaxial Cable - RCA Male / RCA Male (Coaxial Digital Audio Compatible) 5ft Datasheet

    SILICONIX FET AUDIO AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siliconix sd210

    Abstract: SD5000 AN207 CD74HC138 DG271 DG408 DG611 DG612 DG613 SD210
    Text: AN207 12Ćns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of these devices integrates low-power CMOS drivers with


    Original     		PDF AN207 DG611 DG611, DG612, DG613 DG61X DG611 DG612 DG613 siliconix sd210 SD5000 AN207 CD74HC138 DG271 DG408 DG612 SD210

    ADG271

    Abstract: siliconix fet composite op amp for high performance siliconix sd210 SD5000 lateral mosfet audio amplifier DG408 DG611 AN207 siliconix DG613 AN207
    Text: AN207 Siliconix 12Ćns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies by Jack Armijos The DG611, DG612, and DG613 are extremely lowĆpower, highĆspeed analog switches designed to optimize circuit performance in highĆspeed switching applications. Each of


    Original     		PDF AN207 DG611 DG611, DG612, DG613 DG61X DG612 DG613 ADG271 siliconix fet composite op amp for high performance siliconix sd210 SD5000 lateral mosfet audio amplifier DG408 AN207 siliconix AN207

    DG613

    Abstract: siliconix FET AUDIO AMPLIFIER lateral mosfet audio amplifier si582 AN207 CD74HC138 siliconix fet composite op amp for high performance DG408 DG611 DG612
    Text: AN207 12Ćns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies Jack Armijos The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of


    Original     		PDF AN207 DG611 DG611, DG612, DG613 DG61X DG611 DG612 DG613 siliconix FET AUDIO AMPLIFIER lateral mosfet audio amplifier si582 AN207 CD74HC138 siliconix fet composite op amp for high performance DG408 DG612

    SD210 vishay

    Abstract: lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408
    Text: AN207 Vishay Siliconix 12-ns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of


    Original     		PDF AN207 12-ns DG611 DG611, DG612, DG613 DG61X DG611 DG612 SD210 vishay lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408

    siliconix sd210

    Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 2N4959 siliconix sd210 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400

    SD5000

    Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210DE 2n7000 equivalent

    SD5000

    Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
    Text: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 2N4959 MRF904 AN301 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE

    AN301

    Abstract: SD210 sd5000 SD50001 sst211 sot-143 VSB uhf modulator analog siliconix sd210 equivalent of sd211 2N7000 MOSFET protection VSB uhf modulator
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics,


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 22-Jun-94 10-MHz 2N4959 AN301 SD50001 sst211 sot-143 VSB uhf modulator analog siliconix sd210 equivalent of sd211 2N7000 MOSFET protection VSB uhf modulator

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA074A – May 2004 – Revised May 2013 AN-1299 LM5041 Evaluation Board 1 Introduction The LM5041 evaluation board is designed to provide the design engineer with a fully functional current fed push-pull power converter to evaluate the LM5041 controller, and also the LM5101 buck stage gate driver,


    Original     		PDF SNVA074A AN-1299 LM5041 LM5101

    2N5088 equivalent

    Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404

    transistor 2n5088 equivalent

    Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"
    Text: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"

    transistor fn 1016

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor fn 1016 N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92

    si582

    Abstract: U440 transistor 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN
    Text: AN502 Microprocessor-Compatible Multiplexers Facilitate Video Switching Designs For many new communications systems—such as ISDN Integrated Services Digital Network , cable TV, and local area networks (LANs)—traditional switching techniques have become inadequate. To meet the


    Original     		PDF AN502 DG538A 25-Oct-93 Si582 si582 U440 transistor 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN

    transistor q3

    Abstract: 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN PM5654
    Text: AN502 Vishay Siliconix Microprocessor-Compatible Multiplexers Facilitate Video Switching Designs For many new communications systems—such as ISDN Integrated Services Digital Network , cable TV, and local area networks (LANs)—traditional switching techniques have become


    Original     		PDF AN502 04-Aug-99 CLC410 DG538A transistor q3 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN PM5654

    si582

    Abstract: U440 transistor 8085 microprocessor four channel data acquisition system 74LS138 3 to 8 8085 assembly multiplexer philips 74ls32 ttl computer schematics 8085 HP8573A SB18-4 Si581
    Text: AN502 Siliconix MicroprocessorĆCompatible Multiplexers Facilitate Video Switching Designs Gareth Powell For many new communications systemsĊsuch as ISDN Integrated Services Digital Network , cable TV, and local area networks (LANs)Ċtraditional switching techniques


    Original     		PDF AN502 DG538A Si582 si582 U440 transistor 8085 microprocessor four channel data acquisition system 74LS138 3 to 8 8085 assembly multiplexer philips 74ls32 ttl computer schematics 8085 HP8573A SB18-4 Si581

    design adc interfaces with 8085 microprocessor

    Abstract: 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN PROTECTION DEGREE SB1- SWITCH CONTROL
    Text: AN502 Vishay Siliconix Microprocessor-Compatible Multiplexers Facilitate Video Switching Designs For many new communications systems—such as ISDN Integrated Services Digital Network , cable TV, and local area networks (LANs)—traditional switching techniques have become


    Original     		PDF AN502 04-Aug-99 CLC410 DG538A design adc interfaces with 8085 microprocessor 74LS138 74LS32 AN502 DG508A DG534A DG538A DG538ADJ DG538ADN PROTECTION DEGREE SB1- SWITCH CONTROL

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA057C – August 2002 – Revised April 2013 AN–1247 LM2727 Evaluation Board 1 Introduction The LM2727 evaluation board has been designed for a wide variety of components in order to show the flexibility of the LM2727 chips. The input voltage limitations are the same as the chip: 2.2 to 16 VDC. The


    Original     		PDF SNVA057C LM2727 LM2727/ti

    5.1 subwoofer amp

    Abstract: RC2012J103CS sub70no3-09bp surround 5.1 AMPLIFIER ACTIVE SUBWOOFER WITH AMP 5.1 subwoofer audio amplifier pcb layout LXE1722 4ohm .10W speaker 5.1 channel surround sound IC panasonic dvd player schematic
    Text: AUDIOMAX 5.1 CHANNEL DVD CLASS-D AMPLIFIER EVALUATION BOARD USER’S GUIDE I N T E G R A T E D Copyright 2002 Revision 1.3 P R O D U C T S LXE1722 6-CHANNEL EVALUATION BOARD USER GUIDE TABLE OF CONTENTS Board Settings. 3


    Original     		PDF LXE1722 5.1 subwoofer amp RC2012J103CS sub70no3-09bp surround 5.1 AMPLIFIER ACTIVE SUBWOOFER WITH AMP 5.1 subwoofer audio amplifier pcb layout 4ohm .10W speaker 5.1 channel surround sound IC panasonic dvd player schematic

    IHLP2525CZER2R2M01

    Abstract: AN1677 IHLP-2525CZER2R2M01 siliconix FET AUDIO AMPLIFIER 30028 IHLP2525CZER2R2 LM1771 LM3880 FPGA programmable switch capacitor IHLP4040DZER2R0M11
    Text: National Semiconductor Application Note 1677 Tim Hegarty January 14, 2008 Introduction sible. Consequently, the overall power dissipation is application dependent and conditioned by ratios of static and dynamic power loss components. Additionally, Xilinx defines


    Original     		PDF AN-1677 IHLP2525CZER2R2M01 AN1677 IHLP-2525CZER2R2M01 siliconix FET AUDIO AMPLIFIER 30028 IHLP2525CZER2R2 LM1771 LM3880 FPGA programmable switch capacitor IHLP4040DZER2R0M11

    HA400

    Abstract: SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 LM5027 3104-2-00-01-00-00-08-0 da2319
    Text: National Semiconductor Application Note 1976 Terry Allinder August 19, 2009 Introduction Theory of Operation The LM5027 evaluation board is designed to provide the design engineer with a fully functional power converter based on the Active Clamp Forward topology to evaluate the


    Original     		PDF LM5027 AN-1976 HA400 SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 3104-2-00-01-00-00-08-0 da2319

    transistor FN 1016

    Abstract: siliconix fet Siliconix FET Design Catalog siliconix FET DESIGN Siliconix JFET Siliconix "fet" siliconix catalog ag2 transistor Siliconix Application Note U311
    Text: s S ilic o n ix APPLICATION NOTE Audio-Frequency Noise Characteristics of Junction FETs INTRODUCTION factor, a source resistor R q , w ith a therm al noise voltage e j , is added to the circuit. The purpose o f this application note is to identify and characterize audio frequency noise in junction field-effect


    OCR Scan     		PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10