MMBT2907ALT1G
Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
data sheet transisters
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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MMBT2907ALT1G
Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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2N604
Abstract: MJE6043 power transister data MJE6045 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045
Text: : .,!. . ,-, ., , ~./ ;/f: , ,fi-;p.i ,., .; ,., , “ :\ .; .? 2N6040 thru 2N604-2PNP 2N6043 thru 2N6045 ‘NPN , MJE6040thrti”MJE6042PNP ~~~ MJE6043 thru MJE6045 NR~ MOTOROLA @ PLASTIC COMPLEMENTARY designed MEDIUM-POWER SILICON TRANSISTORS for general. purpose
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2N6040
2N604-2PNP
2N6043
2N6045
MJE6040thrti
MJE6042PNP
MJE6043
MJE6045
2N6040,
2N604
power transister data
2N6041
2N6042
2N6044
2N6045
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MOBILE LCD DISPLAY
Abstract: Color TFT LCD Module cpu interface LCD COLOR DISPLAY MODULE TFT lcd RGB display driver COG LCD DISPLAY active year code IC 2844 NM186TA MN863480 TFT MOBILE DISPLAY
Text: LCD Module 1 IMM186A31A Module Spec • 일반 개요 • NM186TA 는 비정질 실리콘 박막 트랜지스터 amorphous Silicon Thin Film Transister 를 스위칭 소자로 사용한 컬러 능동 행열 ( Clolor active matrix ) 방식의 TFT 액정 표시 소자 (Liquid Crystal
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IMM186A31A
NM186TA
MN863480
MNF8921
86inch
00inch
MOBILE LCD DISPLAY
Color TFT LCD Module cpu interface
LCD COLOR DISPLAY MODULE TFT
lcd RGB display driver
COG LCD DISPLAY
active year code
IC 2844
NM186TA
MN863480
TFT MOBILE DISPLAY
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AN5296 Application of the CA3018 Integrated
Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
CA3183
120MHz
AN5296 Application of the CA3018 Integrated
an5296
CA3146
CA3183A
CA3018
CA3046
CA3083
CA3146A
CA3146AE
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BC847PN
Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C
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BC847PN
OT-363
-10mA,
100MHz
200Hz
20-Oct-2009
BC847PN
pnp transister symbol
transister
NPN TRANSISTER
Tr2 transister
1A TRANSISTER
chip transister
marking B2
NPN/PNP transistor
Silicon Transister
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2SK1365
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance
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2SK1365
2SK1365
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM548512L 524,288-W ord x 8-B it H igh-Speed PSR A M DESCRIPTION The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum
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MSM548512L
MSM548512L
A0-A18
MSM5485121-
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transisters
Abstract: 2SA1036K 2SA1577 2SC2411K 2SC4097 Power transisters ScansUX38
Text: 2SA1036K/2SA1577 h- "7 > v 7s $ /Transistors I fci £ * v \ s - i - M PNP y ' j 3 > Epitaxial Planar PNP Silicon Transisters 4 * ^ / Medi um Power Amp. 2 S A 1036K 2 S A 1577 • i iHI2\i‘;&|I3/'Dimensions Unit : mm) 2SA1577 2S A1036K lc Max.= —500mA
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2SA1036K/2SA1577
2SA1036K
2SA1577
500mA
2SC2411K/2SC4097
2SC2411K/
2SC4097.
transisters
2SC2411K
2SC4097
Power transisters
ScansUX38
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1036K
Abstract: No abstract text available
Text: 2SA1036K/2SA1577 h ~7 > v ^ $ / T ransistors X 2SA 10 3 6 K 2SA 1577 t ° ^ d r V T ^ y i ^ - ^ P N P ' > ' ; = ! > h - 7 > V * * Epitaxial Planar PNP Silicon Transisters • i^ ^ Jti'liffl/M ed iu m Power Amp. W fi \H ±[l./Dim ensions Unit: mm • « *
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2SA1036K/2SA1577
1036K
--500mA
2SC2411K
1036K
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2SK1363
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Silicon N Channel MOSType ji-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.) • High Forward Transfer Admittance
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2SK1363
2SK1363
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)
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2SK1928
0021fc
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Silicon N Channel MOSType c-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - r ds (ON) = 0 .1 0Q (Typ.) • High Forward Transfer Admittance
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2SK2030
100nA
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2SK1913
Abstract: No abstract text available
Text: TOSHIBA 2SK1913 Field Effect Transistor Silicon N Channel MOS Type rc-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9Q (Typ.) • High Forward Transfer Admittance - 'Yfs = 3.OS (Typ.)
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2SK1913
90UECE
2SK1913
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2201 Field Effect Transistor Silicon N Channel MOS Type L2-jt-MOS V High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0.28£2 (Typ.) • High Forward Transfer Admittance - -Yfc- = 3.5S (Typ.)
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2SK2201
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transister
Abstract: 2SK1363
Text: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Unit in mm Silicon N Channel MOSType ji-MOS II.5 15.8 ±0.5 #3.6 ±0.2 35 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.)
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2SK1363
transister
2SK1363
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2SK1913
Abstract: BTB 600 BR BTb 600
Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance
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2SK1913
100jiA
20kii)
D021LÃ
BTB 600 BR
BTb 600
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode
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2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1768 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType I?-7t-MOS III High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0-055£2 (Typ .)
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2SK1768
Te-25*
T72SD
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toshiba JD-21TA03
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK2078 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r d s (o n >= 1 -0 ^ (Typ.)
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2SK2078
300jxA
toshiba JD-21TA03
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2SK2057
Abstract: LDR voltage range
Text: TOSHIBA 2SK2057 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0.24Q (Typ.) • High Forward Transfer Admittance
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2SK2057
2SK2057
LDR voltage range
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2SK1767
Abstract: IC251 transister s2014 2SK1767 transistor
Text: TOSHIBA 2SK1767 Discrete Semiconductors Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS III.5 10 ± 0.3 High Speed, High Current Switching Applications # 3.2 ± 0.2 2.7 ± 0.2 Features • Low Drain-Source ON Resistance
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2SK1767
100pA
TCH725D
2SK1767
IC251
transister
s2014
2SK1767 transistor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON)= 0.55Q (Typ.) • High Forward Transfer Admittance
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2SK1865
300hA
JD175SG
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t5d diode
Abstract: 2SK2038 transistor 2sk2038 transister SC-65 Diode 400V 5A
Text: TOSHIBA Discrete Semiconductors 2SK2038 Field Effect Transistor Unit in mm Silicon N Channel M OSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • rds(on>= 1-8ß (Typ.) • High Forward Transfer Admittance
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2SK2038
-300nA
600i----------120
Tc-25-C
t5d diode
2SK2038
transistor 2sk2038
transister
SC-65
Diode 400V 5A
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