diode 701
Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Text: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE
|
OCR Scan
|
MMCM3905,
MMCM3906
MMT3905
MMCM3960A
MMT3960A
MMD70
MMD6050
diode 701
MMCM3905
MMCM3906
MMCM3960A
MMD6050
MMD70
MMT3960
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic
|
Original
|
DH50XXX
DH50103
DH50109
DH50203
DH50051-60
DH50058-60
DH50053-60
DH50103-60
DH50109-60
DH50203-60
|
PDF
|
TEKELEC 302
Abstract: Tekelec Temex
Text: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available
|
Original
|
DH50XXX
TEKELEC 302
Tekelec Temex
|
PDF
|
MPN3401
Abstract: MPN3402
Text: MPN3401 silicon MPN3402 SILICON PIN SWITCHING DIODE SILICON PIN DIODE . . . designed primarily for VH F band switching applications but also suitable for use in general-purpose switching and attenuator circuits. Supplied in an inexpensive low-inductance plastic package for low
|
OCR Scan
|
MPN3401
MPN3402
MPN3401
MPN3402
|
PDF
|
NEC IR
Abstract: 1SS303 NEC IR application note
Text: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.
|
Original
|
1SS303
150ce
NEC IR
1SS303
NEC IR application note
|
PDF
|
marking A14
Abstract: 1SS305
Text: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.
|
Original
|
1SS305
marking A14
1SS305
|
PDF
|
NEC 2101
Abstract: 1SS304 marking A6
Text: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.
|
Original
|
1SS304
NEC 2101
1SS304
marking A6
|
PDF
|
melf diodes color code
Abstract: CLL4148 CLL4448
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON SWITCHING DIODES Hermetically Sealed Glass Silicon Switching Diodes SOD80C Switching Diodes CLL4148 and CLL4448, 500 mW Hermetically Sealed, Glass Silicon Diodes
|
Original
|
OD80C
CLL4148
CLL4448,
CLL4148
CLL4448
C-120
melf diodes color code
CLL4448
|
PDF
|
MMD7001
Abstract: DP 704 C
Text: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc
|
OCR Scan
|
MMD7001
10/jAdc
10mAdc,
MMD7001
DP 704 C
|
PDF
|
MA47080-30
Abstract: No abstract text available
Text: MA47080-30 SILICON PIN SWITCHING DIODE DESCRIPTION: The ASI MA47080-30 is a Passivated Silicon PIN Switching Diode. Designed for control applications such as RF Switching, Limiting, Duplexing, Phase Shifting Variable Attenuation, Modulation, and Pulse forming.
|
Original
|
MA47080-30
MA47080-30
|
PDF
|
D102
Abstract: d1 marking diode
Text: Central CMPD6001 CMPD6001A CMPD6001C CMPD6001S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an
|
OCR Scan
|
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
OT-23
D102
d1 marking diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE
|
Original
|
LMBV3401LT1G
20Vdc
100MHzâ
34Ohms
10mAdc
236AB)
|
PDF
|
DIODE 4d
Abstract: MMBV3401LT1
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE
|
Original
|
MMBV3401LT1
20Vdc
100MHz--0
34Ohms
10mAdc
236AB)
25Vdc
MMBV3401LT1
DIODE 4d
|
PDF
|
ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
|
Original
|
of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: AP1000A-001 SILICON PIN SWITCHING DIODE DESCRIPTION: The AP1000A-001 is a passivated epitaxial Silicon PIN Switching Diode, designed to cover a wide range of control applications that are in the category of RF switching. PACKAGE STYLE 001 MAXIMUM RATINGS IC
|
Original
|
AP1000A-001
AP1000A-001
100mA
|
PDF
|
00QC
Abstract: No abstract text available
Text: Central BAW100 semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.
|
OCR Scan
|
BAW100
OT-143
4000lF
150mA
20-February
OT-143
00QC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE • Rugged Pin Structure Coupled with Wirebond Construction
|
Original
|
MMBV3401LT1
20Vdc
100MHzâ
34Ohms
10mAdc
236AB)
25Vdc
|
PDF
|
d2 diode series
Abstract: marking code DIODE R3 ulc 2003 diode Marking Code 65 marking code REC marking code diode marking CODE D2 DIODE diode marking JA MARKING CODE VF CMPD6001
Text: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,
|
Original
|
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
OT-23
d2 diode series
marking code DIODE R3
ulc 2003
diode Marking Code 65
marking code REC
marking code diode
marking CODE D2 DIODE
diode marking JA
MARKING CODE VF
CMPD6001
|
PDF
|
L4821A
Abstract: SPD10S30 A101 SIDC03D30SIC2
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
SIDC03D30SIC2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
SPD10S30
A101
SIDC03D30SIC2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163A1
Q67050-A4163A2
L4821A,
|
PDF
|
DIODE MARKING CODE F1
Abstract: IR 30 D1 Diode CMPD3003 CMPD3003A CMPD3003C CMPD3003S JA marking Diode Switching d2 marking lla marking code DIODE
Text: CMPD3003 CMPD3003A CMPD3003C CMPD3003S Central TM Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process,
|
Original
|
CMPD3003
CMPD3003A
CMPD3003C
CMPD3003S
OT-23
DIODE MARKING CODE F1
IR 30 D1 Diode
CMPD3003
CMPD3003A
CMPD3003C
CMPD3003S
JA marking
Diode Switching d2
marking lla
marking code DIODE
|
PDF
|
L4821A
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
|
PDF
|
marking c2 diode
Abstract: marking r2 diode diode Marking code A2 marking code C2 diode marking code R2 sot23 DIODE MARKING CODE A1 A2 marking diode diode code a2 marking Ja diode diode MARKING A1
Text: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,
|
Original
|
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
OT-23
marking c2 diode
marking r2 diode
diode Marking code A2
marking code C2 diode
marking code R2 sot23
DIODE MARKING CODE A1
A2 marking diode
diode code a2
marking Ja diode
diode MARKING A1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
|
PDF
|
