diode sod-123 marking code 26
Abstract: marking r4 diode Silicon Schottky Diode sod123 R4 SOD-123 CMHSH-3 Schottky Diode schottky diode low vf schottky diode SOD-123
Text: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
100mA
26-April
diode sod-123 marking code 26
marking r4 diode
Silicon Schottky Diode sod123
R4 SOD-123
CMHSH-3
Schottky Diode
schottky diode low vf
schottky diode SOD-123
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top metal
Abstract: silan
Text: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040AML
2SB035040AML
2SB035040AMLJY-155
2SB035040AMLJL-155
500dice/wafer
top metal
silan
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50um silicon die attach
Abstract: No abstract text available
Text: 2SB065040ML 2SB065040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB065040ML
2SB065040ML
2SB065040MLJY-180
2SB065040MLJY-155
2SB065040MLJL-180
2SB065040MLJL-155
828dice/wafer
50um silicon die attach
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Untitled
Abstract: No abstract text available
Text: 2SB065040MT 2SB065040MT SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB065040MT is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Low VF; ¾ Guard ring construction for transient protection.
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2SB065040MT
2SB065040MT
2SB065040MTJL-180
828dies/wafer
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65
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Q62702-A990
OD-123
6235bÃ
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smd diode 307
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65
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Q62702-A990
OD-123
100mA
smd diode 307
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marking diode SCHOTTKY SOD123 SMD
Abstract: Q62702-A990 BAT SMD
Text: Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65 1) Marking
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Q62702-A990
OD-123
marking diode SCHOTTKY SOD123 SMD
Q62702-A990
BAT SMD
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Untitled
Abstract: No abstract text available
Text: Central“ CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for
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OD-123
100pA
100mA
CPD48
31-October
OD-123
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Untitled
Abstract: No abstract text available
Text: Central" CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for
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OD-123
CPD48,
31-October
OD-123
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Silicon Schottky Diode sod123
Abstract: No abstract text available
Text: CMHSH-3 Central TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
100mA
OD-123
Silicon Schottky Diode sod123
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schottky diode 31
Abstract: schottky diode CMHSH-3
Text: CMHSH-3 Central TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
100mA
31-October
schottky diode 31
schottky diode
CMHSH-3
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schottky diode 100A
Abstract: Silicon Schottky Diode sod123 schottky diode low vf SOD123 CODE S
Text: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
OD-123
100mA
schottky diode 100A
Silicon Schottky Diode sod123
schottky diode low vf
SOD123 CODE S
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Untitled
Abstract: No abstract text available
Text: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
OD-123
100mA
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Untitled
Abstract: No abstract text available
Text: CMHSH-3 Central TM Semiconductor Corp. SUPER-MINI SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
100mA
14-Sept
OD-123
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1N5628
Abstract: 12115X marking AB SOD123 1N5828
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5826
1N5827
1N5828
1N582S
1N5828
DO-35
1N5628
12115X
marking AB SOD123
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sod marking L2E
Abstract: No abstract text available
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
OD-123
38x38
sod marking L2E
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Untitled
Abstract: No abstract text available
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
38x38
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MBR120VLSFT1
Abstract: MBR120VLSFT3
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
r14525
MBR120VLSFT1/D
MBR120VLSFT1
MBR120VLSFT3
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10j smd diode
Abstract: DIODE SMD to4 SCHOTTKY BARRIER DIODE Silicon Schottky Diode sod123 BAT93 MW200N diode smd 2x
Text: Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT93 QUICK REFERENCE DATA • Ultra-fast switching speed SYMBOL • Low forward voltage Vr CONDITIONS MAX. V 200 mA DESCRIPTION VF IP = 10 mA 400 mV Silicon epitaxial Schottky barrier
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BAT93
OD123
MSA894
71100015aL
OD123.
7110fl2b
10j smd diode
DIODE SMD to4
SCHOTTKY BARRIER DIODE
Silicon Schottky Diode sod123
BAT93
MW200N
diode smd 2x
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Untitled
Abstract: No abstract text available
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
38x38
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MBR230LSFT1
Abstract: MBR230LSFT1G
Text: MBR230LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR230LSFT1
OD-123
MBR230LSFT1/D
MBR230LSFT1
MBR230LSFT1G
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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Untitled
Abstract: No abstract text available
Text: MBR230LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR230LSFT1
OD-123
MBR230LSFT1/D
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Untitled
Abstract: No abstract text available
Text: SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • This diode is also available in the MiniMELF case
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SD103AWS
103BWS
103CWS
SD103
LL103A
LL103C,
DO-35
SD103A
SD103C
OD-123
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