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    SILICON RECTIFIER DATA MANUAL Search Results

    SILICON RECTIFIER DATA MANUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    CRG09A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    SILICON RECTIFIER DATA MANUAL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GB4003

    Abstract: No abstract text available
    Text: Application The SCR200 Silicon Controlled Rectifier charger is conservatively rated to recharge discharged GNB Industrial Power batteries, as defined by the GNB® Flooded Classic®, GNB® Flooded Classic Platinum , Tubular-HP®, Tubular-LM™, or Element® installation and operating manuals, to its


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    SCR200 10-year SCR200-AA-BBBBC1X GB4003 PDF

    Silicon Controlled Rectifier Manual

    Abstract: jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060
    Text: Application Note AN-1060 Bare Die: Handling and Storage By Richard Clark Table of Contents Page Introduction .1 Packing/Carrier Type .1


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    AN-1060 Silicon Controlled Rectifier Manual jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


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    DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF

    what is TG in PCB material

    Abstract: ims pcb irf3205 mosfet transistor FET IRF3205 2804S IRF3205 IR IRFS3006PBF AN949 AN-1140 IPC-2221
    Text: Application Note AN-1140 Continuous dc Current Ratings of International Rectifier’s Large Semiconductor Packages By K. Teasdale Principal Engineer International Rectifier Corporation 1 May 2009 Table of contents Page Section 1: Classic Current Rating for Power Semiconductor .2


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    AN-1140 com/technical-info/appnotes/an-949 IRFS3006PbF what is TG in PCB material ims pcb irf3205 mosfet transistor FET IRF3205 2804S IRF3205 IR AN949 AN-1140 IPC-2221 PDF

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001 PDF

    NEC B1100

    Abstract: PE-68386NL PA2369NL LRC-LRF1206LF-01-R033-F GRM32ER72A225KA01 schematic diagram power supply Poe b1100 nec DO1608C-103MLB PA2467NL ETH1-230L
    Text: DEMO MANUAL DC1335B-B LTC4269-1 PoE+ 802.3at Powered Device Controller and Synchronous Flyback DESCRIPTION Demonstration circuit 1335B-B is a high-power supply featuring the LTC 4269-1. This board acts as an IEEE 802.3at compliant, high power Power-over-Ethernet


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    DC1335B-B LTC4269-1 dc1335bbf NEC B1100 PE-68386NL PA2369NL LRC-LRF1206LF-01-R033-F GRM32ER72A225KA01 schematic diagram power supply Poe b1100 nec DO1608C-103MLB PA2467NL ETH1-230L PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board Rev 5.0 for the Si2493/57/34/15/04 ISOmodem with UART and SPI Interfaces Description The global Si2493/57/34/15/04-EVB evaluation board Rev 5.0 provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The


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    Si2493/57/34/15/04 Si2493/57/34/15/04-EVB RS-232 PDF

    sthv748

    Abstract: STM32L1 medical ultrasound sensor electrocardiogram heart rate capacitive sensor M24M01 WLCSP L639x STM8T141 manual STM32 touch sensing l6470
    Text: Semiconductor solutions for portable healthcare February 2010 www.st.com/medical Shortage of facilities, aging populations and rising hospitalization costs are boosting the market for mobile and portable medical solutions. So patients may be more involved in their therapy, today’s medical electronics provides a number of portable diagnostic


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    BRHEALTH0210 sthv748 STM32L1 medical ultrasound sensor electrocardiogram heart rate capacitive sensor M24M01 WLCSP L639x STM8T141 manual STM32 touch sensing l6470 PDF

    in-process quality inspections

    Abstract: mitsubishi metal oxide varistor 011AT phase controlled thyristers MITSUBISHI GATE TURN-OFF THYRISTOR gto thyristor handbook design GTO switching test mitsubishi conclusion of zener diode voltage report 4000BX-90DA zener diode reliability fit
    Text: MITSUBISHI HIGH POWER SEMICONDUCTORS SEMICONDUCTOR DEVICE RELIABILITY 2. Basic Concepts of Semiconductor Device Reliability The failure rate of devices used in an average piece of equipment can be expressed by using the bathtub curve shown in Fig. 1, line a . Taken


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    voltage regulator CD 7805

    Abstract: LM386 footprint soic16 SOIC16-300 free lm386 ATS14 max232acwe jl audio 300 2 schematics Schematic Diagram Audio DB9 To 8 RCA 7805 n-p-n transistor right
    Text: S i 2 4 0 0 U R T- E V B E V A L U A T I O N B O A R D F O R T H E S i2 4 0 0 W I T H A UART I N T E R F A C E Description The Si2400URT-EVB evaluation board provides the system designer an easy way to evaluate the Si2400 ISOmodem . The Si2400URT-EVB consists of a


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    Si2400URT-EVB Si2400 RS-232 Si2400 16-pin voltage regulator CD 7805 LM386 footprint soic16 SOIC16-300 free lm386 ATS14 max232acwe jl audio 300 2 schematics Schematic Diagram Audio DB9 To 8 RCA 7805 n-p-n transistor right PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier Data Sheet No. PD-6.034G IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout


    OCR Scan
    IR2151 0-20V A/210 IR2151 EME6300 MP150 MP190 B-191 DD27715 PDF

    BT169D transistor

    Abstract: bt169d
    Text: UM10512 SSL2109 reference board Rev. 1.1 — 19 April 2012 User manual Document information Info Content Keywords SSL2109, buck, controller, reference board, LED driver, LED retrofit lamp Abstract This document describes the performance, technical data and the


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    UM10512 SSL2109 SSL2109, BT169D transistor bt169d PDF

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


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    MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor PDF

    SI2401

    Abstract: No abstract text available
    Text: Si2401FS10-EVB E V A L U A T I O N B O A R D F O R T H E S i2 4 0 1 W I T H A UART I N T E R F A C E Description The Si2401FS10-EVB evaluation board provides the system designer an easy way of evaluating the Si2401 ISOmodem . The Si2401FS10-EVB consists of a


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    Si2401FS10-EVB Si2401 RS-232 Si2401 16-pin PDF

    PC MOTHERBOARD CIRCUIT diagram free

    Abstract: 2 pin 2.5 3.5 ptt motorola jack diagram pc motherboard reset circuit CIRCUIT DIAGRAM audio Amplifier USING LM386 dtru 1800 4b2 zener diode Schematic Diagram Audio DB9 To 8 RCA Si24XX free lm386 lm386 audio amplifier PCB diagram
    Text: S i 2 4 0 0 U R T- E V B EVALUATION BOARD FOR THE Si2400 WITH A UART INTERFACE Description The Si2400URT-EVB evaluation board provides the system designer an easy way to evaluate the Si2400 ISOmodem . The Si2400URT-EVB consists of a motherboard and power supply, an RS-232 interface


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    Si2400 Si2400URT-EVB RS-232 Si2400 16-pin PC MOTHERBOARD CIRCUIT diagram free 2 pin 2.5 3.5 ptt motorola jack diagram pc motherboard reset circuit CIRCUIT DIAGRAM audio Amplifier USING LM386 dtru 1800 4b2 zener diode Schematic Diagram Audio DB9 To 8 RCA Si24XX free lm386 lm386 audio amplifier PCB diagram PDF

    MBRA210LT3G

    Abstract: No abstract text available
    Text: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


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    MBRA210LT3G, NRVBA210LT3G MBRA210LT3/D MBRA210LT3G PDF

    ln 7805 regulator

    Abstract: free lm386 max232acwe jack j4 rj11 connection to db9 diagram ls 36 motherboard manual PC XT MOTHERBOARD Schematic Diagram Audio DB9 To 8 RCA PC xt MOTHERBOARD CIRCUIT diagram xt motherboard circuit
    Text: S i 2 4 5 6 / 3 3 / 1 4 / 0 3 U R T- E V B E V A L U A T I O N B O A R D F O R T H E Si2456/33/14/03 W I T H A UART I N T E R F A C E Description The Si2456/33/14/03URT-EVB evaluation board provides the system designer an easy way to evaluate the Si2456/33/14/03 ISOmodem . The Si2456/33/14/


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    Si2456/33/14/03 Si2456/33/14/03URT-EVB Si2456/33/14/ 03URT-EVB RS-232 ln 7805 regulator free lm386 max232acwe jack j4 rj11 connection to db9 diagram ls 36 motherboard manual PC XT MOTHERBOARD Schematic Diagram Audio DB9 To 8 RCA PC xt MOTHERBOARD CIRCUIT diagram xt motherboard circuit PDF

    SS26T3G

    Abstract: SS26 SS26T3 SS26 SMB
    Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    SS26/D SS26T3G SS26 SS26T3 SS26 SMB PDF

    B20200G AKA

    Abstract: B20200G
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRF20200CT MBRF20200CT/D B20200G AKA B20200G PDF

    b1l3

    Abstract: 403D MBRA130LT3
    Text: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA130LT3 MBRA130LT3/D b1l3 403D MBRA130LT3 PDF

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG PDF

    Si24xx2G-DC

    Abstract: DO214AA-NP cmc tp16 SOT23-BEC
    Text: G l o b a l Vo i c e I S O m o d e m - E V B Evaluation Board for the Si2494/39/38/37/36/35/29/19/18/17 ISOModem Description Features The Global Voice ISOmodem EVB evaluation board provides the system designer with an easy way of evaluating the ISOmodem. The Voice ISOmodem EVB


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    Si2494/39/38/37/36/35/29/19/18/17 24-pin 38-pin 16-pin Si24xx2G-DC DO214AA-NP cmc tp16 SOT23-BEC PDF

    design smps 500 watt TL494

    Abstract: 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e MC34063 Boost MOSFET uc3844 smps power supply mc34063 step up with mosfet transformer orega 40346
    Text: SWITCHMODE t Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 0, 5/1999 SMPSRM Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation


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