power rectifiers
Abstract: 250 Amp current 1500 volt diode do-9 inverter welder circuit J5C3 J6B3 J6D3 J6M3 J5M3 j5f3
Text: Edal SERIES J5, J6 Silicon Power Rectifiers Edal Series J silicon power rectifiers are ideal for a broad range of commercial and military uses including power supplies, ultrasonic systems, inverters, welders, emergency generators, battery chargers, DC motors and motion
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Diode press-fit
Abstract: No abstract text available
Text: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with
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50A22
BYZ50K39
071855F
BYZ50K39
07185J
Diode press-fit
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e660
Abstract: No abstract text available
Text: BYZ 35A22 . BYZ 35K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 333 391 Silicon Press-fit diodes Silicon Protectifiers with
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35A22
35K39
35K39
e660
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Schottky diode TO220 15A 1000V
Abstract: "Dual Schottky Rectifier" Schottky diode TO220 NTE6088
Text: NTE6088 Silicon Dual Schottky Rectifier 60V, 30 Amp, TO220 Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency
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NTE6088
NTE6088
Schottky diode TO220 15A 1000V
"Dual Schottky Rectifier"
Schottky diode TO220
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MCR380
Abstract: No abstract text available
Text: MCR380 SERIES SILICON BEAM -FIRED INTEG RATED GATE SILICON CONTRO LLED RECTIFIERS BEAM-FIRED INTEG RATED GATE THYRISTO RS . . . designed fo r high power industrial and consumer applications in power and speed controls such as welders, furnaces, m otors, space
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MCR380
20-ohm
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Common Anode Schottky Rectifier
Abstract: SCHOTTKY RECTIFIER 10 Amp CSHD10-45L
Text: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward
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CSHD10-45L
CSHD10-45L
17-February
Common Anode Schottky Rectifier
SCHOTTKY RECTIFIER 10 Amp
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alternator rectifier diode 50a
Abstract: alternators NTE5827 alternator diode 50a NTE5826 NTE5829 NTE5828 press fit rectifiers
Text: NTE5826 thru NTE5829 Silicon Power Rectifier Diode, 50 Amp, Press Fit Description: The NTE5826 thru NTE5829 are silicon power rectifier diodes in a press−fit type package designed for use in all medium−current applications or for higher current industrial alternators and chassis
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NTE5826
NTE5829
NTE5829
NTE5826,
NTE5828)
NTE5827,
NTE5829)
NTE5827*
alternator rectifier diode 50a
alternators
NTE5827
alternator diode 50a
NTE5828
press fit rectifiers
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10 AMP 1200V RECTIFIER DIODE
Abstract: NTE5888 silicon power rectifier diodes NTE5884 NTE5885 silicon power rectifier NTE5864 NTE5865 NTE5889
Text: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp, DO4 Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for
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NTE5864
NTE5889
NTE5889
NTE5864,
NTE5865*
NTE5884,
NTE5885*
NTE5888,
NTE5889*
10 AMP 1200V RECTIFIER DIODE
NTE5888
silicon power rectifier diodes
NTE5884
NTE5885
silicon power rectifier
NTE5865
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General electric SCR C147M
Abstract: GE C147S High power SCR c147 scr C147N C147 GE C147P ge c147 C147A C147B
Text: High Power Silicon Controlled Rectifier 1200 Volts I C147 1 63A RMS The General Electric C l47 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR’s.
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C147A
C147B
C147C
C147D
50AWING
General electric SCR C147M
GE C147S
High power SCR
c147 scr
C147N
C147
GE C147P
ge c147
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C180NX500
Abstract: C180EX500 C180BX500 C180CX500 C180DX500 C180MX500 C180SX500 C180X500 C180AX
Text: High Power Silicon Controlled Rectifier 800 Volts 300ARMS I C180X500 AMPLIFYING GATE The General Electric C l 80X 500 Silicon Controlled Rectifier is specifically designed for low voltage phase control applications; e.g., welding, battery charging, plating supplies, etc. The SCR has very low power dissipation,
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300ARMS
C180X500
80X500
C180NX500
C180EX500
C180BX500
C180CX500
C180DX500
C180MX500
C180SX500
C180X500
C180AX
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laser range finder schematics
Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals
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MCR320-3
Abstract: MCR320-8 MCR320 MCR320-1 MCR320-4 RX-2-G MCR320-7
Text: MCR320 SERIES SILICON -O THYRISTORS K 7 A M P E R E S RM S 50-600 V O L T S SILICON CONTROLLED RECTIFIERS . . . designed prim arily for industrial applications. Ideally suited for capacitor-discharge ignition, systems, power switching and power con trol.
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MCR320
MCR320-3
MCR320-8
MCR320-1
MCR320-4
RX-2-G
MCR320-7
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NTE125
Abstract: DO41
Text: NTE125 General Purpose Silicon Rectifier Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications. Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
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NTE125
NTE125
10sec
DO41
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MCR154
Abstract: F-554 MCR155 MCR156 MCR157 2-20UNF-2A
Text: MCR154, MCR155 MCR156, MCR157 SILICON THYRISTO RS SILICON CONTRO LLED RECTIFIERS THYRISTO RS PNPN . . . designed fo r high frequency power switching applications such as inverters, choppers, transmitters, induction heaters, cycloconverters and high frequency lighting.
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MCR154,
MCR156,
MCR155
MCR157
10/is
MCR156
MCR154
F-554
MCR155
MCR156
MCR157
2-20UNF-2A
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MR1215SL
Abstract: MR1815SL MR1215FL MR1219FL MR1219SL MR1819SL
Text: MR1215FL, MR1219FL SILICON MR1815SL, MR1819SL UNIQUE, MULTI-CELL RECTIFIERS OFFERING HIGHEST ORDER OF RELIABILITY IN POWER APPLICATIONS HIGH-CURRENT SILICON RECTIFIERS 80/100 AMPERE 300, 600 VOLTS DIFFUSED JUNCTIONS Designers Data for "Worst Case" Conditions
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MR1215FL,
MR1219FL
MR181SSL,
MR1819SL
MR1215SL
MR1219SL
MR1815SL
MR1215SL
MR1815SL
MR1215FL
MR1219FL
MR1219SL
MR1819SL
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SHDC624122
Abstract: SHDC624122D SHDC624122N SHDC624122P
Text: SENSITRON SEMICONDUCTOR SHDC624122 SHDC624122P SHDC624122N SHDC624122D TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4984, REV. – HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-258
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SHDC624122
SHDC624122P
SHDC624122N
SHDC624122D
1200-VOLT,
O-258
SHDC624122
SHDC624122D
SHDC624122N
SHDC624122P
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NTE116
Abstract: No abstract text available
Text: NTE116 General Purpose Silicon Rectifier Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications. Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
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NTE116
NTE116
10sec
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Untitled
Abstract: No abstract text available
Text: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at
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MSiCST02120
T4-LDS-0110,
13xxxx)
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD674072B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES:
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SHD674072B
1200-VOLT,
silicon carbide
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD674122 SHD674122B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4183, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE
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SHD674122
SHD674122B
1200-VOLT,
silicon carbide
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE
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SHD675112
SHD675112B
1200-VOLT,
silicon carbide
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Untitled
Abstract: No abstract text available
Text: MCR16N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.
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MCR16N
O-220AB
MCR16N,
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High power SCR
Abstract: C149 cycloconverter C149M10 C149C10 C149M20 C149E10 C149A10 C149A20 C149B10
Text: HIGH SPEED Silicon Controlled Rectifier 600 VOLTS I C 149 I I- — — -* 63A RMS The General Electric Cl 49 Silicon Controlled Rectifier is designed for power switching at high frequencies. This is an all-diffused device which is consider able smaller in size than comparably rated high power SCR’s.
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD674112 SHD674112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATASHEET 4182, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES:
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SHD674112
SHD674112B
1200-VOLT,
silicon carbide
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