BUV26
Abstract: V50B
Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS
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BUV26
85LLC
r14525
BUV26/D
BUV26
V50B
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CASE 221A Style 1
Abstract: BUV26
Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS
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BUV26
CASE 221A Style 1
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BD139
Abstract: BD139 h parameters BD140 BUX84 BUX85 BD139 fall time
Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
r14525
BUX85/D
BD139
BD139 h parameters
BD140
BUX84
BD139 fall time
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BD139 fall time
Abstract: transistor 400 volts.50 amperes BD139 time
Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
BD139
BD140
BD139 fall time
transistor 400 volts.50 amperes
BD139 time
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BD139
Abstract: BD140 BUX84 BUX85 BD139 fall time BD139 time
Text: ON Semiconductort BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
r14525
BUX85/D
BD139
BD140
BUX84
BD139 fall time
BD139 time
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AN569 in Motorola Power Applications
Abstract: MTM20P08 motorola an569 Motorola ON mosfet DS3700 AN569 MTH20P08 tmos fet c3709 MTH20PI0
Text: Order this data sheet by MTH20P08/D MOTOROLA SEMICONDUCTOR~ -.z TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS high speed Power power tors, converters, Silicon solenoid Designer’s
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MTH20P08/D
C37093
s3700
MTH20P08
MK145BP,
MTH20PI0
MTM20P08
MTM20PI0
AN569 in Motorola Power Applications
MTM20P08
motorola an569
Motorola ON mosfet
DS3700
AN569
MTH20P08
tmos fet
c3709
MTH20PI0
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2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2SA1046
380 darlington to3 ibm
REPLACEMENT BD139
BU326
BU108
BU100
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fet irf830
Abstract: MTM4N45
Text: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds
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IRF830
IRF830/D
fet irf830
MTM4N45
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
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PHE13009
PHE13009
O220AB
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phe13007
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
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PHE13007
PHE13007
O220AB
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
r14525
MJE341/D
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PHE13007
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
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PHE13007
PHE13007
O220AB
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NT 407 F TRANSISTOR
Abstract: BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR
Text: MOTOROLA Order this document by BUX85/D SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85/D*
BUX85/D
NT 407 F TRANSISTOR
BD139
BD139 h parameters
TRANSISTOR NPN BD139
BD139 MOTOROLA
BUX85
BD140
BUX84
BD139 TRANSISTOR
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PHE13009
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
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PHE13009
PHE13009
O220AB
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
mje15033 replacement
BU108
TIP41B
MJE2482
x 0602 ma
2SC1419
BU326
BU100
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Untitled
Abstract: No abstract text available
Text: 2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON
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2N5655,
2N5657
2N5655/D
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2sa1008 nec
Abstract: 2SA1008 2SC2331
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
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2SA1008
2SA1008
O-220AB
O-220AB)
2SC2331
2sa1008 nec
2SC2331
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1069A
Abstract: D1485 2SA1069
Text: DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power
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2SA1069,
2SA1069/1069A
O-220AB)
1069A
D1485
2SA1069
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2SC2334
Abstract: nec 2Sa1010 Contact Electronics electronics data book 2SA1010 nec transistor
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
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2SC2334
2SC2334
O-220AB
O-220AB)
2SA1010
nec 2Sa1010
Contact Electronics
electronics data book
2SA1010
nec transistor
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phe13007
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
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PHE13007
PHE13007
O220AB
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PHE13009
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
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PHE13009
PHE13009
O220AB
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bux85
Abstract: Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 60 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
21A-06
O-22QAB
BUX85
Motorola Bipolar Power Transistor Data
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mje341
Abstract: MJE-344 mje344
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.
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MJE341
MJE344
MJE344
-225AA
MJE-344
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2N3738
Abstract: 2N3739 new england semiconductor transistors
Text: 2N3738^ 2N3739* MW ^NEW ENGLAND SEMICONDUCTOR ^ *also available as JAN, JANTX, HIGH VOLTAGE SILICON POWER TRANSISTORS 1.0 AMPERE POWER TRANSISTORS NPN SILICON .designed for high-speed sw itching, linear am plifier applications, high-voltage operational am plifiers, sw itching regulators, converters,
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2N3738
2N3739'
2N3738)
2N3739)
2N3739
Collector100%
new england semiconductor transistors
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