SIR-34ST3
Abstract: RPT-34PB3F SIR-34ST3F
Text: Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Dimensions Units : mm Applications Optical control equipment 1.1 Notes :
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RPT-34PB3F
RPT-34PB3F
SIR-34ST3F
R1010A
SIR-34ST3
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Untitled
Abstract: No abstract text available
Text: Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Dimensions Units : mm Applications Optical control equipment 1.1 Notes :
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RPT-34PB3F
RPT-34PB3F
SIR-34ST3F
R1010A
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RPM-22PB
Abstract: No abstract text available
Text: Phototransistor, side view type RPM-22PB The RPM-22PB is a silicon phototransistor in a side-facing package. High sensitivity with 1.5 lens. Dimensions Units : mm 1.9 2.54±0.1 1.0 Applications Optical control equipment Receiver for sensors 4.1
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RPM-22PB
RPM-22PB
750nm
R1010A
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Untitled
Abstract: No abstract text available
Text: Phototransistor, side view type RPM-22PB The RPM-22PB is a silicon phototransistor in a side-facing package. High sensitivity with 1.5 lens. Applications Optical control equipment Receiver for sensors 1.9 2.54±0.1 1.0 Dimensions Units : mm 4.1
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RPM-22PB
RPM-22PB
750nm
R1010A
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RPT-34PB3F
Abstract: SIR-34ST3F 750Lux
Text: RPT-34PB3F Sensors Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. !External dimensions Units : mm !Applications Optical control equipment
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RPT-34PB3F
RPT-34PB3F
SIR-34ST3F
750Lux
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SIR-341ST3F
Abstract: No abstract text available
Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide
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SIR-341ST3F
SIR-341ST3F
940nm
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Untitled
Abstract: No abstract text available
Text: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
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SIR-563ST3F
SIR-563ST3F
940nm
15deg.
940nm)
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Untitled
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
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SIR-34ST3F
SIR-34ST3F
950nm
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SIR-320ST3F
Abstract: No abstract text available
Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
940nm)
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Untitled
Abstract: No abstract text available
Text: SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household
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SIR-56ST3F
SIR-56ST3F
950nm
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uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
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BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
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Piezo Ceramic plates
Abstract: microwave movement detection cantilever for AFM 8484 au 3d scanner
Text: Agilent 5600LS AFM Versatile AFM for Large and Small Samples Data Sheet Features and Benefits System Overview • Fully addressable and programmable 200 mm x 200 mm stage The Agilent 5600LS large-stage AFM is ready to deliver atomic-resolution results. The versatile 5600LS is the
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5600LS
14/minute
5989-8819EN
Piezo Ceramic plates
microwave movement detection
cantilever for AFM
8484 au
3d scanner
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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ic 555 use with metal detector
Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.
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toy IR remote control circuit diagram
Abstract: Emitting SIR-34ST3F
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-34ST3F
SIR-34ST3F
950nm
toy IR remote control circuit diagram
Emitting
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Untitled
Abstract: No abstract text available
Text: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
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SIR-563ST3F
SIR-563ST3F
940nm
15deg.
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toy IR remote control circuit diagram
Abstract: SIR-341ST3F 940NM data sheet
Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide
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SIR-341ST3F
SIR-341ST3F
940nm
toy IR remote control circuit diagram
940NM data sheet
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toy IR remote control circuit diagram
Abstract: 940NM data sheet SIR-563ST3F
Text: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
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SIR-563ST3F
SIR-563ST3F
940nm
15deg.
toy IR remote control circuit diagram
940NM data sheet
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Physics and Technology
Abstract: physics pn junction diode structure
Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors
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06-Oct-14
Physics and Technology
physics
pn junction diode structure
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Untitled
Abstract: No abstract text available
Text: SIR-563ST3F SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
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SIR-563ST3F
SIR-563ST3F
940nm
15deg.
940nm)
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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Untitled
Abstract: No abstract text available
Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
940nm)
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