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    SILICON NPN POWER TRANSISTOR C 869 Search Results

    SILICON NPN POWER TRANSISTOR C 869 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON NPN POWER TRANSISTOR C 869 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH2729430M

    Abstract: No abstract text available
    Text: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


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    PDF PH2729430M Vccs36 PH2729430M

    PH2323-3

    Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor
    Text: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package


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    PDF PH2323-3 PH2323-3 NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor

    13MM

    Abstract: PH3134-2OL transistor f20 PH3134
    Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134

    PH2729-65M

    Abstract: No abstract text available
    Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    PDF PH2729-65M Curren44) 2052-56X-02 PH2729-65M

    12C TRANSISTOR

    Abstract: transistor j39 transistor J45
    Text: an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features - - - ,320 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PDF PHI21 4-25s l214-25M 12C TRANSISTOR transistor j39 transistor J45

    PH2731-20M

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry


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    PDF PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz

    b 595 transistor

    Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
    Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PDF PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF 214-6M TRANSISTOR Z4

    13MM

    Abstract: PH1214-4M
    Text: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH1214-4M TT50M5OA 2052-56X-02 13MM PH1214-4M

    PH1214-2M

    Abstract: .15 j63 1.5 j63 1035 transistor
    Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor

    J37 transistor

    Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
    Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors


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    PDF Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145

    transistor Common Base configuration

    Abstract: PH1214-8M
    Text: * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry


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    PDF PH1214-8M 3226stor, transistor Common Base configuration PH1214-8M

    transistor c2383

    Abstract: c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL
    Text: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.- - - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors


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    PDF 214-30EL 37kC13 PH1214-30EL transistor c2383 c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL

    wacom

    Abstract: FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor
    Text: an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors


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    PDF PH3134-55L 73050257-1s wacom FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor

    transistor power 5w

    Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
    Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System


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    PDF PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170

    transistor j39

    Abstract: J31 transistor
    Text: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH2729-11 5oos41V104KP4 ci7-11- 9-21s transistor j39 J31 transistor

    Mallory Capacitor

    Abstract: No abstract text available
    Text: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH3134-30s 7305025e-01 Mallory Capacitor

    13MM

    Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5
    Text: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry


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    PDF PH2931 PH2931-135s 13MM transistor Common Base configuration capacitor 50 uf Rogers 6010.5

    b 595 transistor

    Abstract: 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595
    Text: 3 .- an AMP comDanv CW Power Transistor, 2.3 GHz 1W PH2323-1 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System


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    PDF PH2323-1 lOCZ31C UN-53 34N4UA TT5CY50A 73c50257-13 b 595 transistor 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595

    transistor j6

    Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
    Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PI-f2731 PH2731-75L transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015

    TRANSISTOR ZFW

    Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
    Text: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH2731-5M 40-j12 TT50M50A7 TRANSISTOR ZFW zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335

    13MM

    Abstract: No abstract text available
    Text: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry


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    PDF PH2931 13MM

    OMNI SPECTRA

    Abstract: Rogers 6010.5 ATC100A PH2323-3 882 transistor
    Text: PH2323-3 CW Power Transistor 3.5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors


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    PDF PH2323-3 OMNI SPECTRA Rogers 6010.5 ATC100A PH2323-3 882 transistor

    882 transistor

    Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
    Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors


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    PDF PH2323-5 882 transistor omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture