SILICON NPN DARLINGTON TRANSISTOR Search Results

SILICON NPN DARLINGTON TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

SILICON NPN DARLINGTON TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MJE802 Abstract: No abstract text available Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,	Original	MJE802 MJE802 OT-32 OT-32	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration	OCR Scan	MJE802 MJE802 OT-32 GC73280 OT-32 O-126)	PDF
Untitled Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration	OCR Scan	2N6388 O-220	PDF
motorola transistor ignition Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR	OCR Scan	BU323AP 340D-01 motorola transistor ignition	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 P011C 2N6388	PDF
2N6388 Abstract: No abstract text available Text: 2N6388  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
1N4001 transistor free Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn	PDF
BC337 rbe Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations	PDF
K1001 Abstract: 654V k1001 transistor Text: r=7 SGS-THOMSON m 7M [^D l]©llLl©Tri©K1001_ MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration	OCR Scan	K1001_ MJE802 MJE802 OT-32 300jxs, K1001 654V k1001 transistor	PDF
MJE802 Abstract: No abstract text available Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and it is mounted in Jedec SOT-32 plastic	Original	MJE802 MJE802 OT-32 OT-32	PDF
MJE802 Abstract: No abstract text available Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and it is mounted in Jedec SOT-32 plastic	Original	MJE802 MJE802 OT-32 OT-32	PDF
MJ10021 equivalent Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475 Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for	Original	MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475	PDF

MJ10006 Abstract: MJ10007 1N4937 mj10006 equivalent Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,	Original	MJ10007 MJ10007 10Nlit r14525 MJ10007/D MJ10006 1N4937 mj10006 equivalent	PDF
mj10000 Abstract: MJ10001 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,	OCR Scan	MJ10000 MJ10000 MJ10001	PDF
MJ10016 Abstract: MJ10015 1N4937 Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for	Original	MJ10015 MJ10016 MJ10015 MJ10016 r14525 MJ10015/D 1N4937	PDF
MJ10005 equivalent Abstract: MJ10005 transistor mj10005 1N4937 MJ10004 Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,	Original	MJ10005 MJ10005 100Nlit r14525 MJ10005/D MJ10005 equivalent transistor mj10005 1N4937 MJ10004	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC	Original	UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048	PDF
MJ10009 Abstract: 1N4937 2N3762 MTP3055E Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,	Original	MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E	PDF
Untitled Abstract: No abstract text available Text: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN	OCR Scan	BDX87C BDX87C P003F	PDF
Untitled Abstract: No abstract text available Text: Central“ CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICC NDUCTORCZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,	OCR Scan	CZT2000 NDUCTORCZT2000 OT-223 CHARACTERISTICS00 160mA, 100hA 160mA	PDF
mj10016 Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,	Original	MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent	PDF
STX112 Abstract: STX112AP STX112-AP Text: STX112  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN	Original	STX112 STX112 STX112-AP STX112AP STX112-AP	PDF

SILICON NPN DARLINGTON TRANSISTOR Search Results

SILICON NPN DARLINGTON TRANSISTOR Result Highlights (5)

SILICON NPN DARLINGTON TRANSISTOR Datasheets Context Search

MJE802

Untitled

Untitled

motorola transistor ignition

2N6388

2N6388

2N6388

2N6388

1N4001 transistor free

BC337 rbe

K1001

MJE802

MJE802

MJ10021 equivalent

MJ10006

mj10000

MJ10016

MJ10005 equivalent

Untitled

MJ10009

Untitled

Untitled

mj10016

STX112