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    SILICON DIODE TRR 1NS Search Results

    SILICON DIODE TRR 1NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DIODE TRR 1NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    carton box test

    Abstract: ss119 SEMTECH LABEL INNER CARTON LABEL
    Text: 1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Features • Low capacitance. C = 3.0pF max • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Weight approx. 0.092g


    Original     		1N-SS119 DO-34 50kpcs carton box test ss119 SEMTECH LABEL INNER CARTON LABEL PDF

    carton box test

    Abstract: 0092G
    Text: 1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Features • Low capacitance. C = 3.0pF max • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Weight approx. 0.092g


    Original     		1N-SS119 DO-34 50kpcs carton box test 0092G PDF

    carton box test

    Abstract: SEMTECH LABEL
    Text: 1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Features • Low capacitance. C = 3.0pF max • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Weight approx. 0.092g


    Original     		1N-SS119 DO-34 50kpcs carton box test SEMTECH LABEL PDF

    5d 3kv

    Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
    Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage


    Original     		REV9111 PD-DB-0409 5d 3kv equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F PDF

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA PDF

    2KV DIODE

    Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
    Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical


    Original     		PD-DB-0810 2KV DIODE semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552 PDF

    SS119

    Abstract: 65 diode 1N
    Text: 1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Max. 0.45 Min. 27.5 Max. 1.9 Features • Low capacitance Black Cathode Band • Short reverse recovery time Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC


    Original     		1N-SS119 DO-34 SS119 65 diode 1N PDF

    smd diode A4

    Abstract: TBAV70 silicon diode trr 1ns Diode smd marking 44 smd 7333 A
    Text: TBAV70 Low Power Signal Diodes Features: • Silicon planar epitaxial high-speed diodes. • Supplied on 8mm tape. SOT-23 Formed SMD Package Package Outline Details Pin Configuration 1 = Anode 2 = Anode 3 = Cathode Height Width 1.12 3.05 Depth Dimensions : Millimetres


    Original     		TBAV70 OT-23 smd diode A4 TBAV70 silicon diode trr 1ns Diode smd marking 44 smd 7333 A PDF

    BZY88C

    Abstract: BZY88-C12 BZY88C6V8
    Text: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES


    Original     		073713S DO-35 BZY88C BZY88-C12 BZY88C6V8 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    diode sy 715

    Abstract: No abstract text available
    Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F


    OCR Scan     		cH7Q57Ã 001G35S diode sy 715 PDF

    Untitled

    Abstract: No abstract text available
    Text: COIL BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar high-speed switching series diode pair Marking BAV99 * A7 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2 . 8" Pin configuration 0.14 0.48 038 1 = ANODE 2 = CATHODE 3 = CATHODE/ANODE


    OCR Scan     		BAV99 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    IN5822 diode

    Abstract: diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303
    Text: R F ELECTRONICS INC tè i 7 4 ^ 3 1 ^ DDOGODa Ö EME D T -//- o f P Ö ^ e M H IG H V O LTA G IS ZEPJE& _' V-• . , '•i'x'-'-'. á?^ityatf-».'> a !>i‘~ .^ V ¿V ,~-“ r¿ l*»irif»ii<-'i«t-‘ - SILICON RECTIFIERS Fof Glass Passivated add " G ” to Part No.


    OCR Scan     		1N4001/G 1N4002/G 1N4003/G 1N4004/G 1N4005/G 1N4006/G 1N4007/G DO-41 1N5391/G 1N5392/G IN5822 diode diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303 PDF

    Zener Diode 4148

    Abstract: zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER
    Text: B K C INTERNATIONAL □ 3E D | 1 1 7 3 r/HJ 1 W SILICON ZENER DIODES 1N4728 through I > .I Ï Ü Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation ELECTRICAL CHARACTERISTICS DO-41 500mW 3.33 mW/°C ,ii9* mim ait


    OCR Scan     		DQQQ271 1N4728 1N4752 500mW DO-41 1N5194 1N5195 1N5196 Zener Diode 4148 zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER PDF

    IN827 Temperature Compensated Zener

    Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
    Text: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65


    OCR Scan     		0D0CIL55 T-II-07 1N821Â 1N823Â 1N825* 1N827Â 1N829* 1N3500 1N3496 1N3497 IN827 Temperature Compensated Zener 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827 PDF

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    1N5771

    Abstract: 1N5773 1N5769 1N5768
    Text: TYPES 1N5768 TH R U 1N5775 SILICON DIODE ARRAYS B U L L E T IN N O . D L -S 7 3 1 1 9 8 7 , M A R C H 1 9 7 3 C O R E -D R IV E R D IO D E A R R A Y S For Application With Magnetic Cores • Plated-Wire Memories • Decoding or Encoding Applications Airborne Computers


    OCR Scan     		1N5768 1N5775 1N5771 1N5773 1N5769 PDF

    T 4512 H diode

    Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
    Text: This documentation and process conversion measures necessary to comply with this revision shall be completed by 22 Oct 94, | INCH-POUND | I_ i MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-S-19500/420C 15 June 1992 MI L I T A R Y SP EC IF IC AT IO N


    OCR Scan     		MIL-S-19500/4200 MIL-S-19500/420C 1N5550 1N5554, 1N5550US 1N5554US MIL-S-19500. JANHCC1N5551 JANKCA1N5551 1N5552 T 4512 H diode ps 4512 diode diode T 4512 H 1N5551US 1N5551 1N5552 1N5554 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    190-32 UNF-2a

    Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
    Text: MIL SPECS 44E » • DDQQ12S DG34E74 SST ■ M I L S j INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 February 1994 MIL-S-19500/478E 25 October 1993 SUPERSEDING MIL-S-19500/478D


    OCR Scan     		DQQQ12S DG34g7M MIL-S-19500/478E MIL-S-19500/478D 1N5812, 1N5814, 1N5816, JANCA1N5812) 1N5812 A1N5812 190-32 UNF-2a 1N5812 diode 1N5814 1N5816 1N5816 diode 478D PDF

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218 PDF

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF