Untitled
Abstract: No abstract text available
Text: RoHS CS32SP Silicon Diode with Silicon Oxide Passivation in a Copper Pill Package Product Environmental Data Sheet CS32SP Semiconductor Silicon Chip – Oxide Passivated Silicon with Boron Doping CAS 1E-10 Silicon Gold Plated Contact 7400-21-3 Contact CS32SP - Package
|
Original
|
PDF
|
CS32SP
CS32SP
1E-10
|
Untitled
Abstract: No abstract text available
Text: RoHS P55/CS32 Silicon Diodes with Silicon Oxide Passivation in Kovar Pill Package Product Environmental Data Sheet P55/CS32 Semiconductor Silicon Chip – Oxide Passivated Silicon with Boron Doping CAS 1E-10 Silicon Gold Plated Contact 7400-21-3 Contact P55/CS32 - Package
|
Original
|
PDF
|
P55/CS32
P55/CS32
1E-10
|
TMS320C6713pyp
Abstract: SPRS186 TMS320C6713 ccfg C6713 SPRU190 TMS320C6000 TMS320C6713 TMS320C6713B TMS320c6713 hpi mcbsp
Text: TMS320C6713, TMS320C6713B Digital Signal Processors Silicon Errata C6713 Silicon Revision 1.1 C6713B Silicon Revision 2.0 SPRZ191G December 2002 Revised May 2004 Copyright 2004, Texas Instruments Incorporated TMS320C6713, TMS320C6713B Silicon Errata SPRZ191G
|
Original
|
PDF
|
TMS320C6713,
TMS320C6713B
C6713
C6713B
SPRZ191G
TMS320C6713B
TMS320C6713pyp
SPRS186
TMS320C6713 ccfg
SPRU190
TMS320C6000
TMS320C6713
TMS320c6713 hpi
mcbsp
|
SCS120AGC
Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have
|
Original
|
PDF
|
CNA110004
SCS120AGC
SCS110AGC
SCS108AGC
SCS112AGC
600 V power Schottky silicon carbide diode
silicon carbide
Switching Characteristics of Fast Recovery Diodes
ultra low forward voltage schottky diode
ROHM Product Guide Product Catalog
|
TMS320C6000
Abstract: TMS320C6712 TMS320C6712C TMS320C6712D Global cache operations 0x0000FFF8 gdp compiled
Text: TMS320C6712, TMS320C6712C, TMS320C6712D Digital Signal Processors Silicon Errata C6712 Silicon Revisions 1.0, 1.2, 1.3 C6712C Silicon Revision 1.1 C6712D Silicon Revision 2.0 SPRZ182L May 2001 Revised March 2004 Copyright 2004, Texas Instruments Incorporated
|
Original
|
PDF
|
TMS320C6712,
TMS320C6712C,
TMS320C6712D
C6712
C6712C
C6712D
SPRZ182L
TMS320C6712D
TMS320C6000
TMS320C6712
TMS320C6712C
Global cache operations
0x0000FFF8
gdp compiled
|
Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic
|
Original
|
PDF
|
DH50XXX
DH50103
DH50109
DH50203
DH50051-60
DH50058-60
DH50053-60
DH50103-60
DH50109-60
DH50203-60
|
DH40144
Abstract: No abstract text available
Text: SILICON PIN DIODES Plastic package Surface Mount attenuating silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT ATTENUATING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic
|
Original
|
PDF
|
OD323
OT143
DH40141
DH40144
DH40225
DH40141-60
DH40144-60
DH40225-60
DH40141-51
DH40144-51
|
Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide SURFACE MOUNT PACKAGE PLASTIC PACKAGE SWITCHING SILICON PIN DIODES PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES SQUARE SURFACE MOUNT PIN DIODES HIGH VOLTAGE SQUARE SURFACE MOUNT PIN DIODES
|
Original
|
PDF
|
|
AM1806
Abstract: TMS320C6748 errata DVDD1833 TMS320C6748 USB2.0 phy TI
Text: AM1806 ARM Microprocessor Silicon Revision 2.0 Silicon Errata Literature Number: SPRZ314 March 2010 Silicon Errata SPRZ314 – March 2010 AM1806 Silicon Revisions 2.0 1 Introduction This document describes the known exceptions to the functional specifications for the TMS320C6748
|
Original
|
PDF
|
AM1806
SPRZ314
AM1806
TMS320C6748
TMS320C6748
SPRS590)
TMS320C6748 errata
DVDD1833
USB2.0 phy TI
|
AM1707
Abstract: SPRUG84
Text: AM1707 ARM Microprocessor Silicon Revision 2.0 Silicon Errata Literature Number: SPRZ312 March 2010 Silicon Errata SPRZ312 – March 2010 AM1707 Silicon Revision 2.0 1 Introduction This document describes the known exceptions to the functional specifications for the AM1707 ARM
|
Original
|
PDF
|
AM1707
SPRZ312
AM1707
SPRS637)
SPRUG84
|
SPRUG84
Abstract: SPRZ311 AM1705 aintc
Text: AM1705 ARM Microprocessor Silicon Revision 2.0 Silicon Errata Literature Number: SPRZ311 March 2010 Silicon Errata SPRZ311 – March 2010 AM1705 Silicon Revision 2.0 1 Introduction This document describes the known exceptions to the functional specifications for the AM1705 ARM
|
Original
|
PDF
|
AM1705
SPRZ311
AM1705
SPRS657)
SPRUG84
SPRZ311
aintc
|
Diodes
Abstract: PIN diodes
Text: SILICON PIN DIODES Selection guide MICROWAVE SILICON PIN DIODES Selection Guide PAGE SURFACE MOUNT PACKAGE 1-6 - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 1-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 1-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
|
Original
|
PDF
|
|
SPRZ313
Abstract: AM1808 DVDD1833 OMAP-L138 OMAP-L138 setup USB TIMER64P
Text: AM1808 ARM Microprocessor Silicon Revisions 2.0 and 1.1 Silicon Errata Literature Number: SPRZ313 March 2010 Silicon Errata SPRZ313 – March 2010 AM1808 Silicon Revisions 2.0 and 1.1 1 Introduction This document describes the known exceptions to the functional specifications for the OMAP-L138
|
Original
|
PDF
|
AM1808
SPRZ313
AM1808
OMAP-L138
OMAP-L138
SPRS586)
SPRZ313
DVDD1833
OMAP-L138 setup USB
TIMER64P
|
dh340
Abstract: rf detector diodes
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
|
Original
|
PDF
|
DH340
rf detector diodes
|
|
|
Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
|
Original
|
PDF
|
DH340
|
diode 701
Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Text: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE
|
OCR Scan
|
PDF
|
MMCM3905,
MMCM3906
MMT3905
MMCM3960A
MMT3960A
MMD70
MMD6050
diode 701
MMCM3905
MMCM3906
MMCM3960A
MMD6050
MMD70
MMT3960
|
MJ3771
Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808
Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.
|
OCR Scan
|
PDF
|
MJ6257
MJ3771
MJ6302
MJ3773
MJ6700
MJ6701
MJ6701
MJ6257
MJ6302
ADC 808
|
MJE2160
Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications
|
OCR Scan
|
PDF
|
MJE2090
MJE2093
MJE1090
MIE2100
MJE2103
MJE2160
SeeAN-415)
MJE2160
power transistor audio amplifier 500 watts
MJE2090
MJE210
MJE2093
MJE2103
|
TC 2608
Abstract: MR2500S HP 2602
Text: MR2500S Series SILICON MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS . . . compact, highly e fficient silicon rectifiers fo r medium-current applications requiring: DIFFUSED JUNCTION 50-1000 • High Current Surge - 600 Amperes •
|
OCR Scan
|
PDF
|
MR2500S
TC 2608
HP 2602
|
Silicon Photocells
Abstract: S1010 photocell encoder silicon photocell Silicon Sensors, Inc s05025 s1020 S0520
Text: Silicon Photocell Sensors Texas Optoelectronics, Inc. SILICON PHOTOCELL SENSORS TOI silicon photocells are employed in photometer, switching, position detection, tape and disc EOTBOT sensing, solar energy conversion, and other numerous applications. Silicon photosensors with
|
OCR Scan
|
PDF
|
S05025
S0505
S0510
000D524
Silicon Photocells
S1010
photocell encoder
silicon photocell
Silicon Sensors, Inc
s1020
S0520
|
MPQ2369
Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.
|
OCR Scan
|
PDF
|
MPQ2369
MHQ2369
MPQ2483
MPQ2484
2N2483
2N2484
O-116
MPQ2483
MPQ2369
MHQ2906
2N2484
MPQ2484
MPQ2906
MPQ2907
|
mr2001s
Abstract: dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S MR2000S
Text: MR2000S SILICON series MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS 20 AMPERE 50-1000 VOLTS DIFFUSED JUNCTION . . . compact, highly efficien t silicon rectifiers fo r medium-current applications requiring: • High C urrent Surge - 400 Amperes @
|
OCR Scan
|
PDF
|
MR2000S
2000S
2001S
2002S
2004S
2006S
2008S
mr2001s
dioda 30 Ampere
dioda 3 ampere
MR2000SR
MR2000S diode rectifiers
dioda ak 03
MR2002S
dioda rectifier
MR2006S
|
diodes
Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Text: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors
|
OCR Scan
|
PDF
|
426iplier
diodes
em 434
IMPATT
gunn diodes
Tuning Varactors
varactors
GUNN
Diodes high frequency
step recovery diodes
PIN diodes
|
Untitled
Abstract: No abstract text available
Text: STANDAR SILICON SENSORS ES Silicon Sensors offers a wide variety of silicon photodiodes configured for optimum performance. Silicon photodiodes respond in the spectral range from 250-1100 nm, with peak response around 900 nm. Device characteristics and spectral response can be
|
OCR Scan
|
PDF
|
|
