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    SILICON BIPOLAR TRANSISTOR RF POWER AMPLIFIER Search Results

    SILICON BIPOLAR TRANSISTOR RF POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON BIPOLAR TRANSISTOR RF POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    RF TRANSISTOR 10GHZ

    Abstract: SiC BJT 60Ghz bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier AN1509 s-parameters of an 60GHz transistor bipolar transistor die layout
    Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,


    Original     		PDF AN1509 RF TRANSISTOR 10GHZ SiC BJT 60Ghz bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier AN1509 s-parameters of an 60GHz transistor bipolar transistor die layout

    60Ghz

    Abstract: AN1509 60GHz transistor
    Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,


    Original     		PDF AN1509 60Ghz AN1509 60GHz transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP196W Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz


    Original     		PDF BFP196W AEC-Q101 OT343

    bfp196

    Abstract: No abstract text available
    Text: BFP196 Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz


    Original     		PDF BFP196 AEC-Q101 OT143 bfp196

    Untitled

    Abstract: No abstract text available
    Text: BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz


    Original     		PDF BFP650F AEC-Q101

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    MHW1345

    Abstract: catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090
    Text: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 0 10/2002 CATV Distribution Amplifier Module Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . iii


    Original     		PDF DL209/D MHW1345 catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090

    Amplifier Modules motorola

    Abstract: MOTOROLA catv hybrid transistor book MHW914 MHW7342 MHW8222 GAAS FET CROSS REFERENCE MHW9187
    Text: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 1 10/2003 Freescale Semiconductor, Inc. CATV Distribution Amplifier Module Device Data Table of Contents Freescale Semiconductor, Inc. Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii


    Original     		PDF DL209/D Amplifier Modules motorola MOTOROLA catv hybrid transistor book MHW914 MHW7342 MHW8222 GAAS FET CROSS REFERENCE MHW9187

    BLV91

    Abstract: MICROWAVE TRANSITOR AN98026 BLV910
    Text: APPLICATION NOTE Two-tone Linearity in a 900 MHz Silicon Bipolar Class AB Amplifier AN98026 Philips Semiconductors Two-tone Linearity in a 900 MHz Silicon Bipolar Class AB Amplifier CONTENTS 1 INTRODUCTION 2 IMD AND POWER GAIN 3 IMD IMPROVEMENT 4 CONCLUSION


    Original     		PDF AN98026 SCA57 BLV91 MICROWAVE TRANSITOR AN98026 BLV910

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


    Original     		PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    RF Power transistor

    Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting


    Original     		PDF BLV59, BLV59 RF Power transistor TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132

    HFA3101

    Abstract: sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors [ RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


    Original     		PDF AN9744 HFA3101 sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair

    9744

    Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are


    Original     		PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    smd transistor 312

    Abstract: rf amplifier siemens 10 ghz SIEMENS MICROWAVE RADIO 8 GHz BGA310 BGA312 BGA318 Siemens MMIC Polytechnic diagram radar circuit SMX-1
    Text: APPLICATIONS MMICs Gerhard Lohninger ● Knut Brenndörfer Jakob Huber ● Thomas Pollakowski Monolithic broadband amplifiers go mobile In wireless communications, there is a distinct trend toward more compact and lighter terminals. This means that the components used


    Original     		PDF

    transistor C456

    Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and


    Original     		PDF AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486

    2907A PNP bipolar transistors

    Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E 2907A PNP bipolar transistors microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1

    AT-41511

    Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
    Text: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E AT-41511 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411

    mmic a08

    Abstract: A08 mmic MSA-0886 MSA-0886-BLK MSA-0886-TR1G Silicon Bipolar Amplifier A08 A08 rf MSA-0886-BLKG MSA-0886-TR1 A08 monolithic amplifier
    Text: Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-0886 MSA-0886 >6V fixed gain amp Description Lifecycle status: Active Features The MSA-08 is a high gain, minimum feedback 50ohm gain block targeted for narrow and wide bandwidth IF amplifier applications. It is offered in a wide variety of plastic and ceramic


    Original     		PDF MSA-0886 MSA-08 50ohm MSA-0886 MSA-0886-BLK MSA-0886-BLKG MSA-0886-TR1 MSA-0886-TR1G mmic a08 A08 mmic MSA-0886-BLK MSA-0886-TR1G Silicon Bipolar Amplifier A08 A08 rf MSA-0886-BLKG MSA-0886-TR1 A08 monolithic amplifier

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION All information in this data sheet is preliminary J ¥ U iy L \J V i and subject to change. 11/96 3V, 1W RF Power Transistors for 900MHz Applications The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a bias­


    OCR Scan     		PDF 900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2602 MAX2601/MAX2602 MAX2601ESA MAX2602ESA MAX2602E/D 915MHz

    433MHZ amplifier 1w

    Abstract: transistor a 2601
    Text: 19-1185; Rev 2; 5/97 A l i l X I V M 3.6V, 1W RF P o w er Transistors fo r 900M H z A p p licatio n s The MAX2601 is a high-performance silicon bipolar RF po w e r tra n s is to r. The M AX2602 in c lu d e s a h ig h performance silicon bipolar RF power transistor, and a


    OCR Scan     		PDF MAX2601/MAX2602 IS-54) 29dBm -28dBc MAX2601 AX2602 MAX2601/MAX2602 433MHZ amplifier 1w transistor a 2601

    Untitled

    Abstract: No abstract text available
    Text: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a


    OCR Scan     		PDF MAX2601 MAX2601/MAX2602 MAX2601/MAX2602

    varicap diodes

    Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
    Text: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld


    OCR Scan     		PDF PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A HWCA602 HWCB602 HWCA606 HWCB606 varicap diodes BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna