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    SILICON BIPOLAR TRANSISTOR MICRO-X CERAMIC Search Results

    SILICON BIPOLAR TRANSISTOR MICRO-X CERAMIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON BIPOLAR TRANSISTOR MICRO-X CERAMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT-42035

    Abstract: AT-42035G S21E
    Text: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X


    Original     		PDF AT-42035 AT-42035 AT42035 5989-2652EN AV02-0299EN AT-42035G S21E

    Untitled

    Abstract: No abstract text available
    Text: AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description/Applications Features The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X


    Original     		PDF AT-41535 AT-41535 AT-41535G AV01-0144EN

    AT-41535

    Abstract: NF50 S21E
    Text: AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description/Applications Features The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X


    Original     		PDF AT-41535 AT-41535 AV01-0144EN NF50 S21E

    AT-42035

    Abstract: AT-42035G
    Text: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron


    Original     		PDF AT-42035 AT-42035 5988-4734EN 5989-2652EN AT-42035G

    43a Hall Effect Magnetic Sensors

    Abstract: X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard
    Text: HALL EFFECT SENSING AND APPLICATION MICRO SWITCH Sensing and Control 7DEOH RI &RQWHQWV Chapter 1 • Hall Effect Sensing Introduction . 1


    Original     		PDF 005715-2-EN 43a Hall Effect Magnetic Sensors X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    smps control ic LED driver

    Abstract: cellular phone amplifier power control transistor 4.8v rechargeable NiMh CAR SMPS ic TL074 low power management integrated circuits 24v 5 amp smps Cellular GSM, PDC, DAMPS car battery charger 48V SMPS BATTERY CHARGER
    Text: THE COMPLETE POWER MANAGEMENT IC SOLUTIONS FOR WIRELESS TERMINALS Battery 2000 European Conference Laurent JAMET Marketing Manager Wireless Communication Division STMicroelectronics laurent.jamet@st.com  POWER MANAGEMENT INTEGRATED CIRCUITS FOR PORTABLE EQUIPMENT


    Original     		PDF CDMA2000) 200mA 100mA 350mA smps control ic LED driver cellular phone amplifier power control transistor 4.8v rechargeable NiMh CAR SMPS ic TL074 low power management integrated circuits 24v 5 amp smps Cellular GSM, PDC, DAMPS car battery charger 48V SMPS BATTERY CHARGER

    Untitled

    Abstract: No abstract text available
    Text: HEULETT-PACKARD/ CMPNTS blE 1 HEW LETT PACKARD m • M4475B4 0001958 Obi B H P A AT-60535 UP to 6 GHz Low Noise Silicon Bipolar Transistor 35 micro-X Package Features • • • • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz


    OCR Scan     		PDF M4475B4 AT-60535 AT-60535

    AT-60535

    Abstract: AT60535 TRANSISTOR 1ft 83
    Text: HEW LETT-PACKARD/ cnPNTS b lE D HEW LETT PACKARD m • 4447504 • • • OLI BHPA AT-60535 UP to 6 GHz Low Noise Silicon Bipolar Transistor 35 micro-X Package Features • • 00CHB58 Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz


    OCR Scan     		PDF MM475A4 AT-60535 AT60535 TRANSISTOR 1ft 83

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EGE 0 AVANTEK D • 1 1 4 1 Tbb 0 D D b 4 b c1 T AT-41435 Up to 6 GHz Low Noise silicon Bipolar Transistor Silicon Transis T • • • . 1 Avantek 35 micro-X Package Features • ^ - Z Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz


    OCR Scan     		PDF AT-41435 AVANTEK transistor

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical


    OCR Scan     		PDF AT-01635 ion202 310-371-8717or310-37l-847a

    AT01635

    Abstract: AT-01635
    Text: WKSÏÏ HEW LETT 1"EM P A C K A R D AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features • • • • 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr


    OCR Scan     		PDF AT-01635 AT01635

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


    OCR Scan     		PDF AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator

    AT-42035

    Abstract: No abstract text available
    Text: That HEWLETT mL'KÆ PACKARD AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor 35 micro-X Package Features • • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression: 14.0 dB typical Gi dB at 2.0 GHz


    OCR Scan     		PDF AT-42035

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK I NC 20E D 0AVANTEK . • im n b b 000^441 T * >f= „ IB Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • 16.0 dBm typical Pi dBat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz 2.5 dB typical NFo at 2.0 GHz


    OCR Scan     		PDF AT-00535

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS m blE D HEW LETT PACKARD • M44 7 5Ô M DDGT7fiS 10T « H P A AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz EMITTER High Gain-Bandwidth Product: 7.0 GHz typical fr


    OCR Scan     		PDF AT-01635 AT-01635

    AT-41435

    Abstract: transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor
    Text: AVANTEK I NC 0 A V A N SGE D T E H i m DDOmbT T AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor K ~S >\ - Z . I Features • • • • Avantek 35 micro-X Package • Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz


    OCR Scan     		PDF AT-41435 transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor

    AT60535

    Abstract: No abstract text available
    Text: AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Whpt H E W L E T T mL'tia P a c k a r d Features • • • • • 35 micro-X Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz


    OCR Scan     		PDF AT-60535 AT60535

    AT-01635

    Abstract: AT01635 Silicon Bipolar Transistor MICRO-X Silicon Bipolar Transistor
    Text: HEWLETT-PACKARD/ CHPNTS blE D MMM75ÛH □□□T76S 101 AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor W fiM H E W L E T T 1"EM P A C K A R D 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr


    OCR Scan     		PDF MMM75Ã AT-01635 AT-01635 AT01635 Silicon Bipolar Transistor MICRO-X Silicon Bipolar Transistor

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    26-13 transistor sot-23

    Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
    Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages


    OCR Scan     		PDF MA4T6365XX MA4T636535 MA4T636539 OT-143 26-13 transistor sot-23 micro X Silicon Bipolar Transistor Micro-X Ceramic