bfr96 equivalent
Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal
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MCE545
Symb333
SD1127/MRF237
MS1649/MRF630
MRF837/MRF8372
MRF559
400mA
200mA
bfr96 equivalent
MCE544
bfr96 equivalent TRANSISTORS
MC1343
transistor equivalent bfr96
2N5031 equivalent
TRANSISTOR PNP 5GHz
MRF630
MRF544
microsemi MRF237
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CD2397
Abstract: cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"
Text: CD2397 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. PACKAGE STYLE .230 2L FLG FEATURES: • Common Base Pulse at 43V
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CD2397
CD2397
cd2397 Transistor
2L TRANSISTOR
"RF Power Transistor"
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j105 transistor
Abstract: MS1009 J108 - TRANSISTOR
Text: MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1009 is a silicon NPN bipolar transistor designed primarily for VHF communication applications. Gold
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MS1009
MS1009
Temperatu15
136MHz
160MHz
175MHz
j105 transistor
J108 - TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MS1581 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS POUT = 4.0 WATTS GP = 7.0 dB MINIMUM GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1581 is a silicon NPN bipolar transistor specifically
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MS1581
MS1581
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mce544
Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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MC3042
400MHz
SD1127/MRF237
MS1649/MRF630
MRF837/MRF8372
MRF559
400mA
200mA
mce544
bfr96 equivalent
Bipolar Transistor y 200Mhz
MRF237 / SD1127
MC1343
MCE545
transistor 5ghz pnp
MC1309
MRF630
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PNP 2GHz LNA
Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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MC1333
500MHz
SD1127/MRF237
MS1649/MRF630
MRF837/MRF8372
MRF559
400mA
200mA
PNP 2GHz LNA
mce544
bfr96 equivalent
TRANSISTOR NPN 5GHz
TRANSISTOR PNP 5GHz
ms1649
MCE545
transistor 5ghz pnp
MRF630
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Untitled
Abstract: No abstract text available
Text: MS1531 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS CLASS A OPERATION POUT = 4 WATTS GP = 8.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1531 is a gold metallized NPN silicon bipolar transistor
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MS1531
MS1531
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MS2613
Abstract: J225 20 watts transistor s-band
Text: MS2613 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 3.1 – 3.5 GHz 30 VOLTS POUT = 5.0 WATTS GP = 5.2 dB GAIN MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2613 is a high power silicon bipolar NPN transistor
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MS2613
MS2613
500mA
J225
20 watts transistor s-band
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transistor J9
Abstract: No abstract text available
Text: MS2619 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 2.9 – 3.1 GHz 42 VOLTS INPUT/OUTPUT MATCHING POUT = 105 WATTS GP = 6.2 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2619 is a high power silicon bipolar NPN transistor
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MS2619
MS2619
3100GHz
transistor J9
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MS1584
Abstract: No abstract text available
Text: MS1584 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • • 470 - 860 MHz 28 VOLTS POUT = 50 WATTS GP = 6.5 dB MINIMUM INTERNAL INPUT MATCHING CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1584 is a silicon NPN bipolar transistor specifically
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MS1584
MS1584
200mA
250mA
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H31D
Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
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m-pulse tunnel diode
Abstract: Mp2407 MP4033 MP2923 M-PULSE
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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resonator B69500-A9107 siemens
Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active
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BFP405
resonator B69500-A9107 siemens
microwave transistor siemens
B69500-A9107
BFP405
x-band dro
MMIC A04
mtt siemens
SIEMENS BFP405
Siemens Microwave
blocking oscillator uses
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MP42141
Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available
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MP42141
MP42141
MP42141-509
RF TRANSISTOR NPN MICRO-X
low noise transistors microwave
GHZ micro-X Package
MP4214135
MP4214100
MP42141-509
S21E
S22E
MICRO-X
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MMIC Amplifier Micro-X marking 420
Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices
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EHA07485
EHA07486
MWP-25
EHA07487
EHA07488
MWP-35
EHA07489
EHA07490
MMIC Amplifier Micro-X marking 420
x-band microwave fet cfy 14
BFy 90 transistor
guide selection microwave transistors
BFY193
transistor C 5611
transistor "micro-x" "marking" 3
GaAs Amplifier Micro-X
micro-x 420
"Microwave Diodes"
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high power FET transistor s-parameters
Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .
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ATP-1054,
5963-2025E
5966-0779E
high power FET transistor s-parameters
high frequency transistor ga as fet
ATP-1054
bipolar transistor ghz s-parameter
NF50
RF Transistor s-parameter
vacuum tube amplifier
DC bias of gaas FET
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Motorola transistor smd marking codes
Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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Untitled
Abstract: No abstract text available
Text: ggm 1"KM HEW LETT-PACKARD/ C MP NT S b lE D • 4447564 D0 1 0 1 2 5 T21 MSA-0885 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers H EW LETT PACKARD Features 85 Plastic Package • • GROUND • • ■HPA Usable Gain to 6.0 GHz
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MSA-0885
MSA-0885
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AVANTEK MSA
Abstract: avantek microwave AVANTEK MSA-0370-11 AVANTEK MSA-0
Text: d a ta sh eet SÜE D AVANTEK INC 0A V A N TEK C MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 T 7 4 w3 - oi Avantek Chip Outline1 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB typical at 0.1 GHz
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MSA-0800
MSA-0800
amplifier36
AVANTEK MSA
avantek microwave
AVANTEK MSA-0370-11
AVANTEK MSA-0
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS Thai HEW I-E T T 1"KM blE D • 4 4 4 7 S Ö 4 0 0 1 D 1 2 3 15^ PACKARD 70 mil Package Features • • • • I HP A MSA-0870 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Usable Gain to 6.0 GHz
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MSA-0870
MSA-0870
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Untitled
Abstract: No abstract text available
Text: avantek MSA-0870 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz
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MSA-0870
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Untitled
Abstract: No abstract text available
Text: mar dam sheet 0 1992 0A VA N TEK MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek Chip Outline1 Features • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz
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MSA-0800
MSA-0800
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