2N3993
Abstract: 1450 transistor
Text: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
|
Original
|
2N3993
com/2n3993
2N3993
1450 transistor
|
PDF
|
2N6897
Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751
Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,
|
Original
|
2N6897
-100V,
-100V
2N6897
2N689ther
TRANSISTOR 18751
DC/EQUIVALENT transistor 18751
|
PDF
|
2N6897
Abstract: No abstract text available
Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,
|
Original
|
2N6897
-100V,
-100V
2N6897
2N689opment.
|
PDF
|
2N6897
Abstract: No abstract text available
Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor December 2001 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,
|
Original
|
2N6897
-100V,
-100V
2N6897
2N68opment.
|
PDF
|
NE5814
Abstract: NE5814M14 HS350 microphone sensor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NE5814M14 P-CHANNEL LOW NOISE MOS FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF MICROPHONE 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG DESCRIPTION The NE5814M14 is a P-channel silicon MOS FET designed for use as impedance converter for microphone.
|
Original
|
NE5814M14
NE5814M14
NE5814or
PU10628EJ01V0DS
NE5814
HS350
microphone sensor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
|
Original
|
2N5116
com/2n5116
2N5116
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
|
Original
|
2N5115
com/2n5115
2N5115
|
PDF
|
2n5460
Abstract: No abstract text available
Text: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
|
Original
|
2N5460
com/2n5460
2N5460
|
PDF
|
CMUDM8001
Abstract: CMUDM7001 on SOT523 Power mosfet transistor sot P-channel MOSFET VGS -25V mosfet low idss mosfet low vgs
Text: CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed
|
Original
|
CMUDM8001
CMUDM8001
OT-523
100mA
CMUDM7001
on SOT523
Power mosfet transistor sot
P-channel MOSFET VGS -25V
mosfet low idss
mosfet low vgs
|
PDF
|
MOSFET P-channel SOT-23
Abstract: 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23
Text: CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed
|
Original
|
CMPDM8120
CMPDM8120
C8120
OT-23
360mA
810mA
950mA
25-July
MOSFET P-channel SOT-23
80v P-Channel MOSFET
C8120
"Marking code" 2A SOT-23
p-channel sot-23
p-channel SOT-23 20V
MOSFET SOT-23
|
PDF
|
CMPDM8002A
Abstract: C802A
Text: CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed
|
Original
|
CMPDM8002A
CMPDM8002A
C802A
OT-23
500mA,
25-July
200mA
C802A
|
PDF
|
CTLDM8120-M832D
Abstract: TLM832D marking code rg
Text: CTLDM8120-M832D SURFACE MOUNT TLMTM DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel
|
Original
|
CTLDM8120-M832D
CTLDM8120M832D
TLM832D
54mm2
18-September
950mA,
CTLDM8120-M832D
marking code rg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for
|
Original
|
CEDM8001
100mW
OT-883L
CEDM8001:
100mA
29-November
|
PDF
|
CEDM8001
Abstract: No abstract text available
Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for
|
Original
|
CEDM8001
CEDM8001
OT-883L
100mW
CEDM8001:
100mA
16-March
|
PDF
|
|
|
MFE5000
Abstract: No abstract text available
Text: MFE5 0 0 0 silicon SILICON P-CHANNEL ENHANCEMENT MOS FIELD EFFECT QUAD TRANSISTOR MOS FIELD-EFFECT QUAD TRANSISTOR P-CHANNEL • Monolithic Construction Provides Improved Temperature Tracking • Four Field Effect Transistors in One Package Cut Assembly Costs
|
OCR Scan
|
MFE5000
MFE5000
|
PDF
|
MPF256
Abstract: field-effect transistor
Text: MPF256 silicon Advance Information JUNCTION FIELD-EFFECT TRANSISTOR SILICON IM-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S IL IC O N N -C H A N N E L . . . d e p le tio n m ode ju n c tio n fie ld -e ffe c t tra n s is to r designed f o r lo w nois* general a m p lifie r a p p lic a tio n s .
|
OCR Scan
|
MPF256
MPF256
field-effect transistor
|
PDF
|
BFR101A
Abstract: BFR101 BFR101B
Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source
|
OCR Scan
|
bb53T31
251ciÃ
BFR101A
BFR101B
BFR101
BFR101A
BFR101B
|
PDF
|
3SK131
Abstract: 0580S
Text: MOS FIELD EFFECT TRANSISTOR 3SK131 RF AM P. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS • Su itab le fo r use as R F a m p lifie r in V H F T V tuner. in millim eter* • L o w C rIS : 0 .0 5 p F T Y P .
|
OCR Scan
|
3SK131
3SK131
0580S
|
PDF
|
3SK131
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • S uita ble for use as RF a m p lifie r in V H F T V tun er. • Low • High • Low NF : 1.3 dB T Y P .
|
OCR Scan
|
3SK131
3SK131
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .
|
OCR Scan
|
3SK131
|
PDF
|
2SK515
Abstract: 30X33
Text: JUNCTION FIELD EFFECT TRANSISTOR 2S K 515 AUDIO FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters -8 • High Voltage V p sx - 50 V • High I Yfs I I yf l I *4 .1 mS TYP. 0-65 Î? is
|
OCR Scan
|
|
PDF
|
3SK87
Abstract: 2SD20 Tma UHF
Text: NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 3SK87 RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S { U n it : m m • Suitable fo r use as RF a m plifier in UHF T V tuner.
|
OCR Scan
|
3SK87
3SK87
2SD20
Tma UHF
|
PDF
|
3SK74
Abstract: No abstract text available
Text: NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 3SK74 RF AMPLIFIER & MIXER FOR VHF TV N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR "DISKMOLD" FEATURES PACKAGE DIM EN SIO N S Unit : mm • Suitable fo r Use as RF A m p lifie r & M ixer in V H F TV
|
OCR Scan
|
3SK74
3SK74
|
PDF
|
3SK132
Abstract: 3SK132A si2494 g2sc ETEL
Text: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2
|
OCR Scan
|
3SK132A
3SK132
3SK132A
si2494
g2sc
ETEL
|
PDF
|
