Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES 2008. 6. 18 Revision No : 0 1/1
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1N4756A
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1N5253P
Abstract: 1N5231P 1N5242P
Text: 1N5221PT CHENMKO ENTERPRISE CO.,LTD THRU AXIAL LEAD SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 200V 1N5281PT FEATURE * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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1N5221PT
1N5281PT
DO-35
DO-35
1N5275PT
1N5276PT
1N5277PT
1N5278PT
1N5279PT
1N5280PT
1N5253P
1N5231P
1N5242P
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CHEZ6V8BDWGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEZ6V8BDWGP SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 6.8V FEATURE * * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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SC-88/SOT-363
SC-88/SOT-363
150oC)
150oC
-55oC
CHEZ6V8BDWGP
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1N4756A
Abstract: diode iz zener silcon diode
Text: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC
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1N4756A
DO-41
1N4756A
diode iz zener
silcon diode
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Untitled
Abstract: No abstract text available
Text: MCL4148 THRU MCL4448 05 G 3 1 la .3 ss 5 SURFACE MOUNT SWITCHING DIODES 0. Saving apace Fits SOD-323/SOT-23 footprints • Micro Melf package • Silcon epitaxial planar • 0.051(1.30) 0.047(1.20) 0.079(2.00) 0.071(1.80) Case: glass case Characteristic
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MCL4148
MCL4448
OD-323/SOT-23
MCL4148
100mA
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zener 12V 400 mW
Abstract: CHPZ6V2 dual zener ZENER 15.2 Zener Diode SOT-23 1.2V zener diodes CHPZ14VPT dual zener common anode CHPZ19VPT
Text: CHPZ3V6PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.6V TO 33V CHPZ33VPT FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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CHPZ33VPT
OT-23
-55oC
150oC
zener 12V 400 mW
CHPZ6V2
dual zener
ZENER 15.2
Zener Diode SOT-23
1.2V zener diodes
CHPZ14VPT
dual zener common anode
CHPZ19VPT
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CHMZ6.8VGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHMZ6.8VGP SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 6.8V FEATURE * * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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OT-723
OT-723
150oC)
150oC
-55oC
CHMZ6.8VGP
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1N4760
Abstract: silcon diode 1N4744P 1N4747P 1N4743P 1N4756P
Text: 1N4728PT CHENMKO ENTERPRISE CO.,LTD THRU AXIAL LEAD SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.3V TO 100V 1N4764PT FEATURE * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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1N4728PT
1N4764PT
DO-41
DO-41
1N4758PT
1N4759PT
1N4760PT
1N4761PT
1N4762PT
1N4763PT
1N4760
silcon diode
1N4744P
1N4747P
1N4743P
1N4756P
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CHPZ9V1GP
Abstract: CHPZ10VGP CHPZ11VGP CHPZ12VGP CHPZ13VGP CHPZ14VGP CHPZ15VGP CHPZ16VGP CHPZ17VGP CHPZ18VGP
Text: CHPZ3V6GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.6V TO 33V CHPZ33VGP FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.
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CHPZ33VGP
OT-23
-55oC
150oC
CHPZ9V1GP
CHPZ10VGP
CHPZ11VGP
CHPZ12VGP
CHPZ13VGP
CHPZ14VGP
CHPZ15VGP
CHPZ16VGP
CHPZ17VGP
CHPZ18VGP
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CP220x
Abstract: power wizard 1.0 controller "embedded systems" ethernet protocol CP2201 c8051f340 C8051F flash interface C8051F340 C8051F120 Target Board Ethernet-MAC ic power wizard 1.1 controller
Text: Embedded Ethernet Solutions H I G H L Y- I N T E G R A T E D , G L O B A L L Y- C O M P L I A N T FEATURES PoE Powered Device Controller • Complete power management solution • Integrated diode bridges; transient surge suppressor • Switching regulator with integrated driver FET
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20-pin
Si3400
10/100/1000BASE-T
CP2200,
C8051F
CP2200
C8051F120
CP220x
power wizard 1.0 controller
"embedded systems" ethernet protocol
CP2201
c8051f340
flash interface C8051F340
C8051F120 Target Board
Ethernet-MAC ic
power wizard 1.1 controller
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device
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500um
500um
350nm
1100nm
105/125MMF
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RB053L-30
Abstract: No abstract text available
Text: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2
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RB063L-30
100mA
RB053L-30
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Untitled
Abstract: No abstract text available
Text: HMC1063LP3E v00.1012 mixers - i/q mixers, irms & receivers - smT GaAs MMIC I/Q MIXER 24 - 28 GHz Typical Applications Features The Hmc1063LP3e is ideal for: Low LO Power: 10 dBm • Point-to-Point and Point-to-multi-Point radio Wide iF Bandwidth: Dc - 3 GHz
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HMC1063LP3E
HMC1063LP3E
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Untitled
Abstract: No abstract text available
Text: HMC1063LP3E v00.1012 mixers - i/q mixers, IRMs & Receivers - SMT GaAs MMIC I/Q MIXER 24 - 28 GHz Typical Applications Features The HMC1063LP3E is ideal for: Low LO Power: 10 dBm • Point-to-Point and Point-to-Multi-Point Radio Wide IF Bandwidth: DC - 3 GHz
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HMC1063LP3E
HMC1063LP3E
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Untitled
Abstract: No abstract text available
Text: HMC1063LP3E v00.1012 mixers - i/q mixers, IRMs & Receivers - SMT GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Typical Applications Features The HMC1063LP3E is ideal for: Low LO Power = 10 dBm • Point-to-Point and Point-to-Multi-Point Radio Wide IF Bandwidth: DC - 3 GHz
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HMC1063LP3E
HMC1063LP3E
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LMT339N
Abstract: LMT339D LMT339 LMT2901D LMT2901N LMT2901 LMT3 motorola linear I30VDC MIL-STD-833D
Text: MOTOROLA LMT339, LMT2901 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION QUAD COMPARATORS QUAD SINGLE SUPPLY COMPARATORS SILCON MONOLITHIC INTEGRATED CIRCUIT These comp aratcrs are da signed for use in level detection, low level sensing and memory applications In Consumer Automotive and Industrial
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LMT339,
LMT2901
LMT29D1
LMT339N
LMT339D
LMT339
LMT2901D
LMT2901N
LMT2901
LMT3
motorola linear
I30VDC
MIL-STD-833D
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UA739 equivalent
Abstract: MA739C TA739 nA739 uA749 phono preamplifier circuit diagram ua739 MA739 MA749 riaa preamplifier circuit diagram
Text: F A I R C H I L MA739 • fiA749 Dual Audio Operational Amplifier/Preamplifier D A Schlumberger Company Linear Products D escrip tion The n A739 and #iA749 consist of two identical HighGain Operational Amplifiers constructed on a single silcon chip using the Fairchild Planar epitaxial
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MA739
pA749
nA739
jiA749
/xA739
fxA749
UA739 equivalent
MA739C
TA739
uA749
phono preamplifier circuit diagram
ua739
MA739
MA749
riaa preamplifier circuit diagram
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diode ba110
Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V
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BA110
BB141
BB142.
diode ba110
BA142
BA 141 diode
BB142
ba112
BA 30 C
Diode BAY 45
S3 marking DIODE
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Untitled
Abstract: No abstract text available
Text: TA IW AN LIT ON E L E C T R O N I C litem i M IE D 0 0 3 5 1 ^ 5 0 0 0 3 2 4 Û STÔ • T L I T : INFRARED EMITTING DIODE LTE-239/239C - >' ' T 4 M 3 FEATURES • SELECTED TO SPECIFIC O N -LIN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y RANGES. • H IG H POWER O UT PUT.
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LTE-239/239C
LTR-209
LTE-239
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5238A
Abstract: lxe diode LTE5238A
Text: litem : sru r Ü ' H ;' GaAlAs T-13/4 STANDARD 50 INFRARED EMITTING DIODE LTE-4238/4238C/LXE -5*3ftA/Ba3*AC ^'11 • ff" . FEATURES Sijfloohd • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES. • HIGH POWER OUT PUT. • MECHANICALLY AND SPECTRALLY MATCHED TO
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LTE-4238/4238C/LXE
LTR-3208
880nm.
LTE-4238
LTE-5238A
5238A
lxe diode
LTE5238A
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LTR-4208
Abstract: No abstract text available
Text: T A IW AN LI TÔ N E L E C T R O N I C S P E C IA L IS T S4E D Ö Ö 3 5 54 7 O D G D 1 1 4 3 GaAlAs T-l-% MODIFIED 50 INFRARED EMITTING DIODE LTE-4238/4238C FEATURES • S E L E C T E D TO S P E C IF IC O N -L O N E IN T E N S IT Y R A D IA N T IN T E N S IT Y R A N G E S .
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0DD0114
T-13/4
LTE-4238/4238C
LTR-4208
LTE-4238
10/is
Temperature-25Â
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Untitled
Abstract: No abstract text available
Text: FEATURES • SELECTED TO S P E C IF IC O N -L IN E IN T E N S IT Y R A D IA N T IN T E N S IT Y R A N G E S . • H IG H POW ER O U T PU T. • M E C H A N IC A L L Y TO TH E S IS T O R . A N D SPEC TR ALLY L T R -3 2 0 8 S E R IE S OF M ATCHED J. PHOTOTRAN
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITO N E L E C T R O N I C LITEMi 4TE D G A A IA S 5 $ • ôfiaSh'iS G D 0 3 2 b O O'iS ■ T L I T T -1 3 /4 IN F R A R E D S T A N D A R D E M IT T IN G LTE-5238A/5238AC FEATURES •-S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y R A N G E S .
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LTE-5238A/5238AC
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KBL06 AC
Abstract: KBP12 KBPC806G KBL005G kbl06g
Text: V V- V ¡s 5 ¡v v \ - \-é>^ •A\ V ' WAFAD001 “» «j ''"tu«: t / -, /7 E 1 27862 ;.? M V GLASS PASSIVATED BRIDGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Forward Voltage @ 2 5 t Ta Maximum Peak Reverse Voltage Maximum Average Rectified Current
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WAFAD001
-55fc
AMPERE/WOM/RB-15
W005G
2W005G
AMPERE/MB-35
KBL06 AC
KBP12
KBPC806G
KBL005G
kbl06g
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