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Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ211 Abstract: UZ210 kds 210 Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C	OCR Scan	PDF	O-204 67078-A1102-A2 C67078-A1100-A2 210/BÜ SIL02771 BUZ211 UZ210 kds 210

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BUZ211

Abstract: UZ210 kds 210
Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C

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PDF

O-204 67078-A1102-A2 C67078-A1100-A2 210/BÜ SIL02771 BUZ211 UZ210 kds 210