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    SIGNETICS BIPOLAR PROM PROGRAMMING Search Results

    SIGNETICS BIPOLAR PROM PROGRAMMING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    SIGNETICS BIPOLAR PROM PROGRAMMING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


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    N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123 PDF

    10P256

    Abstract: PROM32 10P256F
    Text: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The


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    10P256 10P256 256-Bit PROM32 10P256F PDF

    Untitled

    Abstract: No abstract text available
    Text: 10P016 16 K—Bit ECL Bipolar PROM Objective Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 10P016 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The


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    10P016 10P016 57fiW/blt 16K-Bit PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 0 P 2 5 6 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products FEATURES • Address access time: 3ns max DESCRIPTION The 100P256 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics


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    100P256 256-Bit 100P256 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents-Signetics Document No. 100149B ECN No. 1K-bit ECL bipolar PROM Date of Issue January 1989 Status Preliminary Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 100149B is field programmable, meaning that custom patterns are


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    100149B 100149B 10jiF PDF

    SIGNETICS* fusing procedure

    Abstract: 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126
    Text: N 8 2 S126A 8 2 S129A i 1 K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    82S126A 82S129A 82S129A 82S129Aof SIGNETICS* fusing procedure 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-1282 ECN No. 91142 Date of Issue October 27, 1987 Status Product Specification 10149A 1K-bit ECL bipolar PROM Memory Products DESCRIPTION FEATURES APPLICATIONS The 10149A is field programmable, meaning that custom patterns are


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    0149A 0149A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents-Signetics 10149B Document No. ECN No. Date of Issue December 1988 Status Preliminary Specification 1 K-Bit ECL Bipolar PROM ECL Products DESCRIPTION FEATURES The 10149B is field programmable, meaning that custom patterns are immediately available by following the


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    10149B 10149B PDF

    10149AF

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-1282 1 0 1 4 9 A ECN No. 91142 Date of Issue October 27, 1987 1K-Bit ECL Bipolar PROM Status Product Specification ECL Products D ESCR IPTIO N The 10149A is field programmable, meaning that custom patterns are


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    0149A 66mW/blt 0149A 10149AF PDF

    B3A5

    Abstract: cmos prom Prom 8KX8 55nac
    Text: Signetics 27HC641 64K-Bit CMOS PROM 8Kx 8 Product Specification Military CMOS Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Tha 27HC641 is a CMOS, high-speed UV erasable, electronically programmed Read Only Memory. It is organized as 8192 words of 6 bits and operates from a


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    27HC641 64K-Bit 27HC641 24-pin B3A5 cmos prom Prom 8KX8 55nac PDF

    BIPOLAR PROM PROGRAMMING SPECIFICATION

    Abstract: SIGNETICS prom signetics SIGNETICS semiconductor 27HC641 cmos prom
    Text: Philips Components-Signetics 27HC641 Document No. 853-1212 ECN No. 006580 Date o f Issue April 28, 1992 Status Product Specification 64k-bit CMOS PROM 8k x 8 Military CMOS Memory Products DESCRIPTION The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed


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    27HC641 64k-bit 27HC641 BIPOLAR PROM PROGRAMMING SPECIFICATION SIGNETICS prom signetics SIGNETICS semiconductor cmos prom PDF

    BIPOLAR PROM PROGRAMMING SPECIFICATION

    Abstract: b3a7 eprom 8k 24pin
    Text: SigneHcs 27HC641 64K-Bit CMOS PROM 8K x 8 Product Specification Military CMOS Memory Products DESCRIPTION The 2 7H C 641 is available in the industry The 27H C 641 is a C M O S , high-speed U V erasable, electronically program med R ead Only Memory. It is organized as


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    27HC641 64K-Bit 500ns BIPOLAR PROM PROGRAMMING SPECIFICATION b3a7 eprom 8k 24pin PDF

    SIGNETICS* fusing procedure

    Abstract: 82S115 825115 N82S115 S82S115 SIGNETICS prom Bipolar PROM programming signetics generic procedure
    Text: BIPOLAR MEMORY DIVISION MAY 1982 82S115 PROGRAMMING PROCEDURE PRO G RAM M ING SYSTEM SP E C IF IC A T IO N S Testing o f these lim its m ay cause p rog ra m m in g o f device. T a = +25°C LIM ITS TE S T C O N D IT IO N S PARAMETER UN IT Min Max V Power su p p ly voltage


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    PDF

    24 SIGNETICS

    Abstract: 27HC641 84PGA
    Text: NAPC/ S I G N E TIC S/ ni LI TA RY Signetics 20 E D • bbSB^St, 000173b T 27HC641 64K-Bit CMOS PROM 8Kx 8 Product Specification Military CMOS Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed


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    bb53iafa QQ0173b 27HC641 64K-Bit 27HC641 T-90-A0 24-Lead 28-Lead 24 SIGNETICS 84PGA PDF

    SIGNETICS* fusing procedure

    Abstract: 100149 1,8k resistor BIPOLAR PROM PROGRAMMING SPECIFICATION ECL prom 74Ks Bipolar PROM programming
    Text: BIPOLAR MEMORY DIVISION MAY 1982 100149 PROGRAMMING PROCEDURE PROGRAMMING NOTES 1. These are s p e c ific a tio n s w h ic h a Pro­ gram m ing S yste m m u st s a tis fy in o rde r to be q u a lifie d by S lg n e tic s . 2. A ll vo lta g e s are re fe ren ce d to VCC2,


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    PDF

    82S123 programming

    Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
    Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO


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    N82S23 N82S123 N82S126 N82S1-29 N82S27 N82S130 N82S131 N82S114 N82S115 82S123 programming PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608 PDF

    SIGNETICS prom

    Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
    Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO


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    N82S23 N82S123 N82S126 N82S1-29 N82S27 N82S130 N82S131 N82S114 SIGNETICS prom 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom PDF

    82S123 programming

    Abstract: 82S23 825123 32x8 rom 82S123 SIGNETICS* fusing procedure signetics 82S123 82523 n82s123 rom32x8
    Text: s ig im tiE S 256-BIT BIPOLAR PROGRAMMABLE ROM 32x8 ROM (82S23 OPEN COLLECTOR) (82S123 TRI-STATE) FEBRUARY 1975 82S23 82S123 D IG ITA L 8000 S ER IES T T L / M E M O R Y DESCRIPTION PIN CONFIGURATION The 62S23 (Open Collector Outputs? and the 82S123 (Tri-StateOutputs) are Bipolar 256-Bit Readonly Memories,


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    82S23 82S123 82S123 82S23 256-Bit 82S123 programming 825123 32x8 rom SIGNETICS* fusing procedure signetics 82S123 82523 n82s123 rom32x8 PDF

    connecting diagram for ic 7432

    Abstract: SIGNETICS 2656 PC4000 pin-out diagram for 7404 IC connecting diagram for ic 7404 8T97B IC 74LS14 for oscillator 7404 inverter pin configuration 7432 or gate ic SIGNETICS 7404 IC
    Text: PRELIMINARY SPECIFICATION DESCRIPTION PC-4000 CABLE AND CONNECTOR ASSEMBLY The Signetics PC-4000 is an emulation of the Signetics 2656, a 40-pin NMOS-LSI sys­ tem memory interface chip. The PC-4000, in circuit board form, offers the engineer a system design aid. By designing with the


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    PC-4000 40-pin PC-4000, 128X8 8T28B connecting diagram for ic 7432 SIGNETICS 2656 PC4000 pin-out diagram for 7404 IC connecting diagram for ic 7404 8T97B IC 74LS14 for oscillator 7404 inverter pin configuration 7432 or gate ic SIGNETICS 7404 IC PDF

    SIGNETICS* fusing procedure

    Abstract: prom 256x4 bit Bipolar ROM 1K X 4 bipolar rom 256*4 82S27 N82S27
    Text: signotics 1024-BIT BIPOLAR PROGRAMMABLE ROM 256X4 PROM 82S27 JULY 1975 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S27 is a Bipolar 1024-Bit Read Only Memory, organized as 256 words by 4 bits per word. It is FieldProgrammable, which means that custom patterns are


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    1024-BIT 256X4 82S27 82S27 SIGNETICS* fusing procedure prom 256x4 bit Bipolar ROM 1K X 4 bipolar rom 256*4 N82S27 PDF

    82s129 programming

    Abstract: 82s126 programming 82S129 N825129 82S126 N82S126 bipolar rom 256*4 S82S129 prom 82S126 signetics 82S129
    Text: • s m n n t i P i : O iy iH - L I U d 1024- b i t b i p o l a r PROGRAMMABLE ROM 256x4 PROM F E B R U A R Y 1975 f i? ç i? R 82S129 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S126 (Open Collector Outputs) and the 82S129 (Tri-State Outputs) are Bipolar 1024-Bit Read Only Mem­


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    1024-BIT R9Q19R 256x4 82S129 82S126 82S126 82S129 82s129 programming 82s126 programming N825129 N82S126 bipolar rom 256*4 S82S129 prom 82S126 signetics 82S129 PDF

    82s131 programming

    Abstract: rom 512x4 512 x 4 PROM SIGNETICS* fusing procedure 512x4 2041b 82S131 825131 82s130 programming 82S130
    Text: B g g n o ticB 2041-BIT BIPOLAR PROGRAMMABLE ROM 512x4 PROM FEBRUARY 1975 825130 825131 DIGITAL 8000 SERIES TTL/M EM ORY D E S C R IP T IO N The 82S130 (Open Collector Outputs) and the 82S131 (Tri-State Outputs) are Bipolar 2048-Bit Read O nly Mem­ ories, organized as 512 words by 4 bits per word. They


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    2041-BIT 512x4 82S130 82S131 2048-Bit 82S130 82S131 82s131 programming rom 512x4 512 x 4 PROM SIGNETICS* fusing procedure 2041b 825131 82s130 programming PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents-Slgnetics 100149B Document No. ECN No. 1 K-Bit EC L Bipolar P R O M Date of Issue January 1989 Status Preliminary Specification ECL Products DESCRIPTION FEATURES The 100149B is field programmable, meaning that custom patterns are immediately available by following the


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    100149B 100149B PDF

    PEEL programming

    Abstract: PEEL153 82S153 PLS153 Gould Electronics ICT Peel PEEL18CP210 signetics 82S*53 SIGNETICS* 82S153 application of programmable array logic
    Text: CMOS Programmable Electrically Erasable Logic Device •> GOULD Electronics Advanced Product Information PEEL 18CP210 Features -P C -b a s e d software translates existing JEDEC files to 18CP210 format • Advanced CMOS E2PROM Technology • Architectural and Design Enhancements


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    18CP210 PLS153 PEEL18CP210 PEEL18CP210/PEEL153 PEEL programming PEEL153 82S153 Gould Electronics ICT Peel signetics 82S*53 SIGNETICS* 82S153 application of programmable array logic PDF