UHV 806
Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861
Text: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for
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2SC5800
Abstract: NESG2046M33
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TS
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
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NESG2046M33
Abstract: NESG2107M33
Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor
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PA880TS
NESG2046M33,
NESG2107M33)
S21e2
NESG2046M33
NESG2107M33
NESG2046M33
NESG2107M33
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Untitled
Abstract: No abstract text available
Text: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent
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TST0950
TST0950
D-74025
06-Feb-98
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TST0950
Abstract: No abstract text available
Text: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent
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TST0950
TST0950
D-74025
26-Nov-97
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2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TD
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
NEC JAPAN IC
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transistor nec 8772
Abstract: nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 NESG2031M05 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E
Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:
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NESG2031M05
OT-343
NESG2031M05
transistor nec 8772
nec 8772 transistor
BR 8772
MJE 15004 transistor
transistor BR 8772
MJE 4302
NESG2031M05-T1
NESG2031M05-T1-A
S21E
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transistor nec 8772
Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:
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NESG2031M05
OT-343
NESG2031M05
transistor nec 8772
transistor BR 8772
nec 8772 transistor
NEC transistor 8772
8772 nec transistor
br 8772 transistor
MJE 15004 transistor
BR 8772
nec 8772
9622 transistor
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MAM427
Abstract: 238-104 BGA2003 BGU2003 MMIC marking code 132 MGS539
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 PINNING FEATURES • Low current PIN DESCRIPTION • Very high power gain
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M3D124
BGU2003
SCA73
125006/04/pp8
MAM427
238-104
BGA2003
BGU2003
MMIC marking code 132
MGS539
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU540
BFU540
MSB842
125104/00/04/pp11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
BFU510
MSB842
125104/00/04/pp11
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10GHz oscillator
Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
SCA73
125104/00/04/pp12
10GHz oscillator
4 pin dual-emitter
RF TRANSISTOR 10GHZ
BFU510
RF TRANSISTOR 2.5 GHZ s parameter
RCS9
"MARKING CODE A5*"
6 pins IC cbe
LC marking code transistor
RF NPN POWER TRANSISTOR 2.5 GHZ
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4 pin dual-emitter
Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU540
SCA73
125104/00/04/pp12
4 pin dual-emitter
BFU540
10GHz oscillator
MARKING A4 transistor
o-50
RF NPN POWER TRANSISTOR 2.5 GHZ
RF TRANSISTOR 10GHZ low noise
transistor D 587
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4 pin dual-emitter
Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU540
SCA73
125104/00/04/pp12
4 pin dual-emitter
BFU510
RF TRANSISTOR 10GHZ
RF TRANSISTOR 10GHZ low noise
TRANSISTOR FOR 10GHz oscillator
RF NPN power transistor 2.5GHz
"MARKING CODE A4"
10GHz oscillator
RF NPN POWER TRANSISTOR 2.5 GHZ
RF POWER TRANSISTOR NPN
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BFU510
Abstract: SiGe POWER TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain
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BFU510
SCA75
613516/03/pp16
BFU510
SiGe POWER TRANSISTOR
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ST0950
Abstract: No abstract text available
Text: Temic TST0950 S e mi c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu
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TST0950
TST0950
D-74025
06-Feb-98
ST0950
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0950 S e m i c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu
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TST0950
TST0950
D-74025
06-Feb-98
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SiGe 2577
Abstract: NEC NESG2030M04 nec 2401 wireless communication NESG2030M04 2SC5761 NESG2030M04-A NESG2030M04-T2 NESG2030M04-T2-A S21E nec LE 737
Text: NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm
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NESG2030M04
OT-343
NESG2030M04
SiGe 2577
NEC NESG2030M04
nec 2401 wireless communication
2SC5761
NESG2030M04-A
NESG2030M04-T2
NESG2030M04-T2-A
S21E
nec LE 737
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Untitled
Abstract: No abstract text available
Text: T0930 SiGe-Power Amplifier for CW Applications Description The pager amplifier is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900 MHz Two-way
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T0930
D-74025
12-Aug-99
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GSM 900, 1800, 1900 max power diagram
Abstract: TST0911 TST0911-TSQ TST0911-TSS gsm amplifier 1900 mhz rf power amplifier circuit diagram
Text: TST0911 Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based
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TST0911
900-MHz
1800/1900-MHz
D-74025
20-Sep-00
GSM 900, 1800, 1900 max power diagram
TST0911-TSQ
TST0911-TSS
gsm amplifier
1900 mhz rf power amplifier circuit diagram
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Untitled
Abstract: No abstract text available
Text: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
08-May-00
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Untitled
Abstract: No abstract text available
Text: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
20-May-99
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atmel 935
Abstract: block diagram of wireless watt meter
Text: T0931 SiGe Power Amplifier for CW Applications Description The T0931 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter
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T0931
T0931
900-MHz
D-74025
12-Sep-00
atmel 935
block diagram of wireless watt meter
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Untitled
Abstract: No abstract text available
Text: T0931 SiGe Power Amplifier for CW Applications Description The T0931 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter
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T0931
T0931
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