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    Infineon Technologies AG SIGC11T60SNCX1SA2

    IGBT 3 CHIP 600V WAFER
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    Infineon Technologies AG SIGC11T60SNCX1SA1

    IGBT 3 CHIP 600V WAFER
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    EBV Elektronik SIGC11T60SNCX1SA1 21 Weeks 1
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    SIGC11T60SNC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIGC11T60SNC Infineon Technologies IGBT Chip in NPT-Technology Original PDF
    SIGC11T60SNC Infineon Technologies For faster switching drive application low turn off energy Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC11T60SNC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 10A


    Original     		PDF SIGC11T60SNC Q67050-A4155A001 7302-S,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type SIGC11T60SNC VCE 600V This chip is used for: • IGBT Modules G Applications: • drives


    Original     		PDF SIGC11T60SNC Q67050-A4155sawn 1400e 7302-S,

    A001

    Abstract: SGP10N60A SIGC11T60SNC
    Text: Preliminary SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type SIGC11T60SNC VCE 600V This chip is used for: • IGBT Modules G Applications: • drives


    Original     		PDF SIGC11T60SNC Q67050-A4155sawn 7302-S, A001 SGP10N60A SIGC11T60SNC

    SGP10N60A

    Abstract: SIGC11T60SNC
    Text: SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC11T60SNC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 10A


    Original     		PDF SIGC11T60SNC Q67050-A4155A001 7302-S, SGP10N60A SIGC11T60SNC