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    SIGC109T120R3L Price and Stock

    Infineon Technologies AG SIGC109T120R3LEX1SA2

    IGBT 1200V 100A DIE
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    DigiKey SIGC109T120R3LEX1SA2 Bulk
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    EBV Elektronik SIGC109T120R3LEX1SA2 71 Weeks 1
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    Infineon Technologies AG SIGC109T120R3LX1SA1

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC109T120R3LX1SA1)
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    Avnet Americas SIGC109T120R3LX1SA1 Waffle Pack 34
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    Infineon Technologies AG SIGC109T120R3LEX1S

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC109T120R3LEX1SA2)
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    Avnet Americas SIGC109T120R3LEX1S Waffle Pack 1,998
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    SIGC109T120R3L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIGC109T120R3L Infineon Technologies IGBT Chip Original PDF
    SIGC109T120R3L Infineon Technologies For faster switching drive application, Trench-and Fieldstop technology Original PDF
    SIGC109T120R3LEX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 100A DIE Original PDF

    SIGC109T120R3L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC109T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3L VCE ICn 1200V 100A This chip is used for:


    Original     		SIGC109T120R3L Q67050A4210-A101 L7681B, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC109T120R3LE IGBT3 Chip Features: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE IC SIGC109T120R3LE 1200V 100A This chip is used for: • power modules


    Original     		SIGC109T120R3LE SIGC109T120R3LE L7686U, PDF

    SIGC109T120R3L

    Abstract: No abstract text available
    Text: SIGC109T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3L VCE ICn 1200V 100A This chip is used for:


    Original     		SIGC109T120R3L Q67050A4210-A101 L7681B, SIGC109T120R3L PDF

    141002

    Abstract: SIGC109T120R3L
    Text: Preliminary SIGC109T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3L VCE ICn 1200V 100A This chip is used for:


    Original     		SIGC109T120R3L Q67050sawn A4210-A101 L7681B, 141002 SIGC109T120R3L PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC109T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3L VCE ICn 1200V 100A This chip is used for:


    Original     		SIGC109T120R3L Q67050A4210-A101 L7681B, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC109T120R3LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling Chip Type VCE IC SIGC109T120R3LE 1200V 100A This chip is used for:


    Original     		SIGC109T120R3LE SIGC109T120R3LE L7688N, L7688U, L7688F, PDF