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    SIEMENS IGBT BSM 25 GB 100 D Search Results

    SIEMENS IGBT BSM 25 GB 100 D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS IGBT BSM 25 GB 100 D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


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    siemens igbt BSM 150 gb 100 d

    Abstract: CJ 53B siemens igbt BSM100GB160D csccn
    Text: SIEMENS BSM 100 GB 160 D IGBT Module VCE= 1600 V 'c =2* 135 A at TC=25°c 'c = 2* 100 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half-bridge Type Ordering code BSM 100 GB 160D


    OCR Scan     		PDF 100gb16a C67076-A2112-A2 20ki2 A23SbG5 flS35bD5 00b0S3S BSM100GB160D gm105270 023SbOS siemens igbt BSM 150 gb 100 d CJ 53B siemens igbt BSM100GB160D csccn

    siemens igbt BSM 150 gb 100 d

    Abstract: BSM100GB120D siemens igbt
    Text: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •


    OCR Scan     		PDF 235ti05 2x135 2x100 C67076-A2107-A2 C67076-A2012-A2 siemens igbt BSM 150 gb 100 d BSM100GB120D siemens igbt

    siemens EM 235

    Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
    Text: feOE D • fl235bOS 004Sflb4 TÔT ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 75 GB 120 D BSM 75 G AL 120 D IGBT Module Preliminary Data y CE = 1 2 0 0 V / c = 2 x 100 A at Tc = 25 C / c = 2 x 7 5 A at r c = 8 0 C • • • • • Power m odule Half-bridge/Chopper


    OCR Scan     		PDF fl235bOS 004Sflb4 C67076-A2106-A2 C67076-A2011-A2 SII00238 siemens EM 235 siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt chip a2108 C67076-A2108-A70 siemens igbt
    Text: SIEMENS BSM 150 GB 120 DN2 CT=> 3SS IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 VCE lc 1200V 210A Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings


    OCR Scan     		PDF C67076-A2108-A70 -V-100 Mar-28-1996 siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt chip a2108 C67076-A2108-A70 siemens igbt

    siemens ha 8000

    Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
    Text: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper


    OCR Scan     		PDF C67076-A2105-A2 C67076-A2010-A2 siemens ha 8000 BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d

    IGBT Module BSM150GB120D

    Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
    Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule


    OCR Scan     		PDF BSM150GB120D 2x150 C67076-A2108-A2 C67076-A2013-A2 sii00202 IGBT Module BSM150GB120D siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens

    BSM75GB100D

    Abstract: siemens igbt IGBT 75 D BSM75 siemens igbt BSM 150 gb 100 d BSM75GAL100D GB1000 SIEMENS BST P S110 GB100D
    Text: SIEM EN S B S M 7 5 G B 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data 1000 V Ic= 2 x 75 A / 1 x 75 A V ce • • • • • = Power module Half-bridge / Chopper Including fast free-wheel diodes Package with insulated metal base plate Package outline / Circuit diagram: 2b, 2c1


    OCR Scan     		PDF C67076-A2104-A2 C67076-A2003-A2 BSM75GB100 BSM75GAL1000 BSM75GB1000 B5H75GAL1000 BSM75GB100D BSM75GAL100D siemens igbt IGBT 75 D BSM75 siemens igbt BSM 150 gb 100 d BSM75GAL100D GB1000 SIEMENS BST P S110 GB100D