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    SIEMENS IGBT BSM Search Results

    SIEMENS IGBT BSM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS IGBT BSM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Eupec Power Semiconductors 600v bsm

    Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
    Text: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München


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    bsm150gd120dn2

    Abstract: bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Mario Feldvoss ● Andreas Karl IGBT modules of the second generation: Econopacks shrink frequency converters Siemens has developed technically superior, but low-cost packages for second-generation IGBTs in the power range from


    Original     		PDF BSM100GD120DN2) bsm150gd120dn2 bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


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    siemens igbt BSM 200 GA 120

    Abstract: 1C00 siemens bsm 284 f siemens R9
    Text: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


    OCR Scan     		PDF 0D45R20 C67076-A2000-A2 siemens igbt BSM 200 GA 120 1C00 siemens bsm 284 f siemens R9

    siemens igbt BSM 300

    Abstract: siemens igbt BSM 200 GA 120 NC4000
    Text: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2007-A2 siemens igbt BSM 300 siemens igbt BSM 200 GA 120 NC4000

    Untitled

    Abstract: No abstract text available
    Text: bOE D • flSBStiOS 004577b Û1G SIEMENS ISIEG SIEMENS AKTIENGESELLSCHAF BSM 05 GD 100 D IGBT Module Preliminary Data y CE = 1000 v I c = 6 x 5.5 A at J c = 25 C / c = 6 x 5.0 A at Tc = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes


    OCR Scan     		PDF 004577b C67076-A2506-A52

    siemens ha 8000

    Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
    Text: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper


    OCR Scan     		PDF C67076-A2105-A2 C67076-A2010-A2 siemens ha 8000 BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d

    BSM15GD120D

    Abstract: 14V-12 vm305171 C160 QD45
    Text: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes


    OCR Scan     		PDF 235b05 BSM15GD120D vm305171 BSM15GD120D C67076-A2504-A2 14V-12 vm305171 C160 QD45

    siemens igbt BSM 75 gb 100

    Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
    Text: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper


    OCR Scan     		PDF 235bDS 0045flSb 2x100 C67076-A2104-A2 C67076-A2003-A2 fl23SbDS siemens igbt BSM 75 gb 100 siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg

    BSM200GA100D

    Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
    Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


    OCR Scan     		PDF fl23SbD5 BSM200GA100D GA100D C67076-A2001-A2 SII00253 SII00254 BSM200GA100D bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 stt25

    IGBT Module BSM150GB120D

    Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
    Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule


    OCR Scan     		PDF BSM150GB120D 2x150 C67076-A2108-A2 C67076-A2013-A2 sii00202 IGBT Module BSM150GB120D siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens

    BSM25GD120D

    Abstract: No abstract text available
    Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2505-A2 sii00219 sii00220 BSM25GD120D

    BSM300GA120DN2E3166

    Abstract: C67070-A2007-A70 D273 siemens igbt BSM300GA120DN2
    Text: SIEMENS BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 VCE 1200V 430A Package Ordering Code SINGLE SWITCH 1


    OCR Scan     		PDF BSM300GA120DN2E3166 BSM300GA120DN2E3166 C67070-A2007-A70 fl235b05 053Sb05 53SLDS C67070-A2007-A70 D273 siemens igbt BSM300GA120DN2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2


    OCR Scan     		PDF BSM150GB120DN2E3166 C67076-A2112-A70 ID0fl020fl 023Sb05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = 10 Ohm Type ‘'CE BSM150GB170DN2 E3166 1700V 220A h


    OCR Scan     		PDF BSM150GB170DN2 E3166 E3166 C67070-A2709-A67

    BSM50GD60DN2E3226

    Abstract: No abstract text available
    Text: SIEMENS BSM50GD60DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE lc Package Ordering Code


    OCR Scan     		PDF BSM50GD60DN2E3226 E3226: BSM50GD60DN2E3226

    VQE 13E

    Abstract: No abstract text available
    Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package


    OCR Scan     		PDF BSM150GB170DN2 E3166 C67070-A2709-A67 0235b05 VQE 13E

    BSM25GB120D

    Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
    Text: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge


    OCR Scan     		PDF 0235bG5 C67076-A2109-A2 C67076-A2009-A2 S23SbDS DGMSfi22 BSM25GB120D C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks

    BSM10GD100D

    Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
    Text: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF GGM57Ã C67076-A2507-A52 BSM10GD100D BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge

    siemens EM 235

    Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
    Text: feOE D • fl235bOS 004Sflb4 TÔT ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 75 GB 120 D BSM 75 G AL 120 D IGBT Module Preliminary Data y CE = 1 2 0 0 V / c = 2 x 100 A at Tc = 25 C / c = 2 x 7 5 A at r c = 8 0 C • • • • • Power m odule Half-bridge/Chopper


    OCR Scan     		PDF fl235bOS 004Sflb4 C67076-A2106-A2 C67076-A2011-A2 SII00238 siemens EM 235 siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100

    siemens igbt BSM 150 gb 100 d

    Abstract: BSM100GB120D siemens igbt
    Text: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •


    OCR Scan     		PDF 235ti05 2x135 2x100 C67076-A2107-A2 C67076-A2012-A2 siemens igbt BSM 150 gb 100 d BSM100GB120D siemens igbt

    bsm 256

    Abstract: siemens igbt BSM 150 gb 100 d C67076-A2102-A2 BSM 15 GB bsm siemens VM105270
    Text: L.GE D • Ö235b05 DDMSÖÖfl 413 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF IGBT Module Preliminary Data BSM 150 GB 100 D BSM 150 GAL 100 D VCE - 1000 V I c = 2 x 2 0 0 A at T c = 25 C / c = 2 X 150 A at Tc = 8 0 C • • • • • Power m odule H alf-bridge/Chopper


    OCR Scan     		PDF 2x200 BSM150 VM105270 C67076-A2102-A2 C67076-A2005-A2 bsm 256 siemens igbt BSM 150 gb 100 d BSM 15 GB bsm siemens VM105270

    GD120DN2E3226

    Abstract: BSM 50 GD120DN2E3226 BSM50GD120DN2E3226
    Text: SIEMENS BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal BSM 50 GD120DN2E3226 LU Type #c


    OCR Scan     		PDF GD120DN2E3226 E3226: GD120DN2E3226 C67070-A2514-A67 BSM 50 GD120DN2E3226 BSM50GD120DN2E3226

    siemens igbt

    Abstract: No abstract text available
    Text: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Prelim inary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on.min = 5-6 Ohm Type Kce BSM300GA170DN2 E3166 1700V 440A 1c Package


    OCR Scan     		PDF BSM300GA170DN2 E3166 E3166 C67070-A2710-A67 siemens igbt