Untitled
Abstract: No abstract text available
Text: SIEMENS HFG : Fab.-Gr.: Date: 25.4.97 Datasheet Preliminary Department: HL OCD VIS AT Name: F. Schellhorn GF: 43 Edition: 1 2 3 4 5 6 X Automotive Application BLUE LINE Hyper 5mm LED Typ: Unicolored X SMT LB 5436 Die-Technology: MultiLED □ Radial
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Q62703
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k 1487
Abstract: 9960 A1217
Text: .gf SIEMENS AKTIEN6ESELLSCHAF H7E D • fl235bDS 0027^18 b ISIEG \ W 5560 Features: • hermetically sealed glass housing • type 60 material E Application: • burner control in parking heaters TYP R10 [kQ] R100 [kQ] R01 IkQ] R05 [kQ] v max [V] ^max [mW]
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fl235bDS
k 1487
9960
A1217
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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BGA318
EHA07312
Q62702-G0043
T-143
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lm 458 ic
Abstract: No abstract text available
Text: SIEMENS HFG :C Fab.-Gr.: 545 Date: 17.03.97 Datasheet Preliminary Department: HL OCD VIS AT Name: F. Schellhorn GF: 43 Edition: 1 2 3 4 5 6 X BLUE LINE Hyper 3mm Typ: Unicolored X SMT LB 3336 Die-Technology: MultiLED □ Radial X m in ( If = 10 mA)
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Q62703
Q3934
lm 458 ic
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diode GG 79
Abstract: BAW 79 W 79AB
Text: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771
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Q62702-A781
62702-A782
Q62702-A771
Q62702-A733
EHA07003
EH800I00
diode GG 79
BAW 79 W
79AB
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 79 A BAW 79 D • For high-speed switching • High breakdown voltage • Common cathode Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
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Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
OT-89
D12D434
fl235bÃ
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BF993
Abstract: KDS 1M marking MTs g1625 I00MH Silicon N Channel MOSFET Tetrode t 993 d
Text: SIEM ENS BF 993 Silicon N Channel MOSFET Tetrode For high-gain, low-distortion VH F TV and FM mixer and input stages Type Marking Ordering Code tape and reel B F 993 ME Q62702-F1018 Pin Configuration 4 1 2 3 S D G2 Package1) Gì SOT-143 Maximum Ratings Parameter
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Q62702-F1018
OT-143
3Sb05
00bbfi
flZ35b05
EHT07232
EHM07014
6S35b05
BF993
KDS 1M
marking MTs
g1625
I00MH
Silicon N Channel MOSFET Tetrode
t 993 d
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Untitled
Abstract: No abstract text available
Text: Connectors Sub-0 Housings Housing size : Dimensions in mm ; A max. B (max.) c D E | 15 31.30 25 - 23,3 15 contacts I15 39.62 33.3 16,5 23.3 25 contacts ; 15 53.52 47 30.4 37 37 contacts l 15 69,80 63,5 46.7 53.5 50 contacts ! 15 67.41 61.1 44,3 51,5 0 10 . 14.6
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V42254-A122-V1
V42254-A152-V1
V42254-A132-V1
V42254-A142-V1
SBS0262-2
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diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
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023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
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BUZ91A
Abstract: buz91
Text: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vds 600 V b 8A ^DS on Package Ordering Code 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current Values Id
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O-220
C67078-S1342-A3
BUZ91A
buz91
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smd diode T42
Abstract: smd transistor 718
Text: SIEMENS BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • di//di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL Vds 50 V b flDS on
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102AL
O-220
C67078-S1356-A2
l45bfi
fl23Sb05
235bOS
smd diode T42
smd transistor 718
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BUZ171
Abstract: No abstract text available
Text: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs 1D flbS on Package Ordering Code BUZ171 -50 V -8 A 0.3 n TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 30 °C
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BUZ171
O-220
C67078-S1450-A2
BUZ171
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R414
Abstract: siemens 230 99 o SIEMENS EC 230 99
Text: SIEMENS BUZ 73 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 Vbs 200 V b 7A flbSion 0.4 f l Package Ordering Code TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Id
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O-220
C67078-S1317-A2
R414
siemens 230 99 o
SIEMENS EC 230 99
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b flbSion Package Ordering Code BUZ 76 400 V 3A 1.8 £2 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b
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O-220
C67078-S1315-A2
8E35LD5
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L388D
Abstract: No abstract text available
Text: ÛÔD D • ô235bOS 0Q14SSÔ 3 « S I E i S ‘ 88D 14558 D '7~~ t BUZ 35 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description C ase l'os h ^DS on
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235bOS
0Q14SSÔ
C67078-A1014-A2
as35bD5
S235b05
L388D
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SMD Transistor 1c
Abstract: No abstract text available
Text: SIEMENS TLE 4266 5 -V L o w -D ro p V o lta g e R e g u la to r Bipolar 1C Features • Output voltage tolerance < ± 2 % • V e ry low current consum ption • Low-drop voltage • Overtemperature protection • R e v e rs e polarity proof • Wide tem perature range
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Q67006-A9152
P-SOT223-4-2
Q67006-A9355
T223-4-2
GSV10
P-SOT223-4-2
SMD Transistor 1c
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" transistor" fgs 3
Abstract: Fly DS 100
Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1342-A2
" transistor" fgs 3
Fly DS 100
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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CF739
Abstract: 7S66 1 928 300 599 marking MS "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
CF739
7S66
1 928 300 599
marking MS
"marking ms"
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Siemens DIODE E 1220
Abstract: No abstract text available
Text: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V
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SPP30N03L
SPB30N03L
SPB30N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4143-A2
Q67040-S4737-A3
Siemens DIODE E 1220
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siemens igbt BSM 50 gb 100 d
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 C67076-A2100-A2 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2
Text: bOE D • 8 2 3 5 b D 5 Q D L*Sfi4D S4b « S I E G SIEMENS s i e „ e n s A K T I E NGESELLSCHAF IGBT Module BSM 50 GB 100 D BSM 50 GAL 100 D Preliminary Data V CE = 1000 V / C = 2 x 70 A at T c = 25 C / c = 2 x 50 A at T c = 80 C • • • • • Power m odule
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C67076-A2100-A2
C67076-A2002-A2
fl235bOS
siemens igbt BSM 50 gb 100 d
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 100 gb
C160
DD45
diode wss
bsm siemens
GGM5
C67076-A2002-A2
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5gs smd transistor
Abstract: zl ITT zener BTS 732 Zener diode 5.6 itt 410H Zener diode itt 56-4 410E2 AUTO DIODE vow Zener diode itt 150 zener diode ITT
Text: flE3Sb05 OD^ÔM? SIEM ENS 7ET • PROFEI BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation * Overload protection * Current limitation * Short circuit protection
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flE3Sb05
flS35bOS
5gs smd transistor
zl ITT zener
BTS 732
Zener diode 5.6 itt
410H
Zener diode itt 56-4
410E2
AUTO DIODE vow
Zener diode itt 150
zener diode ITT
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BSM25GD100D
Abstract: C67076-A2501-A2 KS2500 BSM25GD-100 BSM25GD100
Text: bOE J> • 0 E 3 S b G S D Q 4 S Ô 2 4 31 3 « S I E G SIEMENS SI EM EN S A K T I E N 6 E S E L L S C H A F ~ T - 'Z 3 - IGBT Module BSM25GD100D Preliminary Data VCE = 1000 V I c = 6 x 3 5 A at r c = 25 C I c = 6 x 2 5 A at r c = 80 C • • • • •
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C67076-A2501-A2
BSM25GD100D
C67076-A2501-A2
KS2500
BSM25GD-100
BSM25GD100
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