808nm 1W laser diode
Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Text: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical
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O-220
D-93049
de/Semiconductor/products/37/376
B143-H7010-G1-X-7600
TS12975.
808nm 1W laser diode
980nm led
laser diode 905nm
led 940nm high power 1W
laser diodes 808nm 1w
905nm Plastic Pulsed Laser Diode
780nm laser diode module
SPL/780nm laser diode module
CG94
TO220 Semiconductor Packaging
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
isl 6251 schematic
smd transistor A4S
Siemens OFW 361
smd marking b4h
6Bs smd transistor
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
Transistors Diodes smd A7H
a4s smd transistor
npn transistor ss100
smd transistor 6Bs
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siemens px 100
Abstract: No abstract text available
Text: SIEMENS AKTIENGESEL LSC HAF SIEMENS •47E J> m fl235b05 D0Ebfi7& M * S I E 6 RB-42B Mask-Diffused GaAsP LED PART NO. 2680-0016 - T-Hh 97 A R Coating P-raetal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION
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fl235b05
RB-42B
siemens px 100
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTSi OPTO MME D Ô£3b35b QQOMbTb G B S I E X SIEMENS RM-81B Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0056 - T - y/- 99 P-metal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS
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3b35b
RM-81B
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led bar siemens
Abstract: SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY selenium diode silicon carbide LED silicon carbide US Lasers Siemens Components
Text: SIEMENS Innovators in Optical Information Technology Company Overview Siemens Components is a major producer in the sem iconductor industry, with facilities virtually world wide. The Optical Information Technology Group OIT is headquartered in Regensburg.
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RM-73A
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 47E D SIEM ENS • flSBSbOS OOSbflfll 4 « S I E G "Fit-W. rm-73A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0003 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-73A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and
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35b05
RM-73A
-10MA
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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RM14A
Abstract: No abstract text available
Text: • 8S3b32h OQOMtll 1 M S I E X FV/-Ÿ? SIEMENS RM-14A Mask-Diffused GaAsP Monolithic LED with Cursor PART NO. 2680-0117 P-metal anode Diffusion Barrier Epitaxial Layer > Substrate . N-metal (cathode) B SSSE DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-14A is a mask-diffused GaAsP
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8S3b32h
RM-14A
RM14A
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24 GHz Microwave Doppler Radar Speed Sensor
Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
Text: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLS CHA F 47E » SIEM EN S • SSBSbDS DQ2bßöl 4 « S I E G W ? . RM-73A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0003 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-73A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and
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RM-73A
GaAs80-0003
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SMD TRANSISTOR MARKING 76
Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO M4E D • fia3b32b 0004 ^2 3 m s i Z X T-Y/-99 S IE M E N S RM-15B Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0008 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-15B is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and
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fia3b32b
RM-15B
T-Y/-99
Characteris15B
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CFY19-22
Abstract: CFY19 Dual-Gate* bf981 bf987
Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '
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BF930
BF994S
BF996S
BF998
BF1012
CF739
CF750
OT-143
CFY19-18
CFY19-22
CFY19
Dual-Gate* bf981
bf987
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siemens SFH nm
Abstract: sfh418 SFH414
Text: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>
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SFH416:
SFH414/415/416
siemens SFH nm
sfh418
SFH414
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Untitled
Abstract: No abstract text available
Text: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location
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023SbÃ
LD242
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Untitled
Abstract: No abstract text available
Text: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )
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LD274
fl235b05
LD274/275
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MSC 5010
Abstract: Microwave Semiconductors MIL883 leak
Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and
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sfh615
Abstract: Siemens sfh615 optocoupler siemens 611 B235 transistor S56 optocoupler LP 250
Text: SIEMENS AKTIEN6ESELLSCHÂF 47E D • fl235bGS □□272^0 ë ■ SIEG SIEMENS SFH 610 SFH 611 SFH 615 2.8 kV TRIOS OPTOCOUPLERS HIGH RELIABILITY FEATURES * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical >13
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fi235bG5
sfh615
Siemens sfh615 optocoupler
siemens 611
B235
transistor S56
optocoupler LP 250
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Untitled
Abstract: No abstract text available
Text: bOE 1 • S23SbQS 004b51b 734 » S I E G SIEMENS LD 261 ARRAYS LD 262—269/260 SINGLE DIODE SIEMENS AKTIENGESELLSCHAF INFRARED EMITTER DIODES Package Dimensions in Inches mm 106 (2 7) 098 (2 5 ) 1 * » 138(3 5 ) 118(3 0 ) _ L Maximum Ratings
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S23SbQS
004b51b
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diode b27
Abstract: N40 DIODE
Text: bOE ]> • fl235b05 004^541 b27 ISIEG SIEMENS AKTIENGESEL LSC HAF SIEMENS SFH 2115 FEATURES Characteristics T A= 2 5 °C • B Diodes Connected in Series • T 0 18 Package Parameter • Floating O utput Signal • FC Connector fo r use w ith 200 jim Fiber, NA=0.37
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fl235b05
diode b27
N40 DIODE
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PMB4220
Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Text: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0
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PMB4819
100nF
100nF
PMB4819
PMB4220
pmb4420
PMB 4420
Siemens pmb 4420
transistor smd marking gk
5-PIN MARKING PAX
smd diode marking KC
L50Q
4819
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H A 431
Abstract: No abstract text available
Text: SIEMENS AKT IENGESELLSCHAF M7E D flEBSbDS Ü0B73Ô1 0 « S I E 6 SIEMENS SFH 431 SERIES INFRARED EMITTER t - FEATURES Absolute Maximum Ratings • • • • Parameter TO-18 Hermetic Package, 3-Leaded Dome Glass Lens Very Narrow Beam, ± 8 ° Three High Power Intensity Ranges
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SFH431
H A 431
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1L31
Abstract: 1LD5
Text: SIEMENS C M P N T S t OPTO SIEMENS Û23b35b OÜOSOQ1 T B S I E X 44E D IL30/IL31/IL55 SINGLE CHANNEL ILD30/ILD31/ILD55 DUAL CHANNEL ILQ30/ILQ31/ILQ55 QUAD CHANNEL PHOTODARLINGTON OPTOCOUPLER FEATURES • 125 mA Load Current Rating • Fast Rise Tim e—10 ns
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23b35b
IL30/IL31/IL55
ILD30/ILD31/ILD55
ILQ30/ILQ31/ILQ55
e--10
e--35
ILD31,
ILQ31
E52744
IL30/IL31/IL55,
1L31
1LD5
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SFH400
Abstract: No abstract text available
Text: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)
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6E35bOS
SFH480
SFH481
SFH482
SFH480,
SFH481,
SFH482,
SFH400
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