AN217
Abstract: 103E2 74F786 03624E-2 63e2
Text: Philips Semiconductors Application note Metastability tests for the 74F786 – 4-input asynchronous bus arbiter AN217 Authors: Charles Dike and Naseer Siddique in this study should be considered a measurement at the edge of the typical range for 74F786 parts.
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74F786
AN217
74F786
10E6hz)
260E2
AN217
103E2
03624E-2
63e2
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Abstract: No abstract text available
Text: SiC “Super” Junction Transistors with Ultra-Fast < 15 ns Switching Capability Ranbir Singh, and Siddarth Sundaresan, GeneSiC Semiconductor, USA. ranbir@ieee.org Abstract 1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are
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ED-23
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SiC BJT
Abstract: transistor 304
Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.
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12M6501
SiC BJT
transistor 304
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IXZ421DF12N100
Abstract: No abstract text available
Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
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kV-10
-500V
-1000V
IXZ421DF12N100
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MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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Abstract: No abstract text available
Text: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author
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DEAR0000112)
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103e2
Abstract: AN217 03624E-2 74F786
Text: INTEGRATED CIRCUITS AN217 Metastability tests for the 74F786 – a 4-input asynchronous bus arbiter 1988 Jul 18 Philips Semiconductors Philips Semiconductors Application note Metastability tests for the 74F786 – 4-input asynchronous bus arbiter AN217 Authors: Charles Dike and Naseer Siddique
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AN217
74F786
74F786
103e2
AN217
03624E-2
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Abstract: No abstract text available
Text: Mater. Res. Soc. Symp. Proc. Vol. 1433 2012 Materials Research Society DOI: 10.1557/opl.2012.1032 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under LongTerm DC and Pulsed Operation at various Temperatures Siddarth G. Sundaresan, Aye-Mya Soe, and Ranbir Singh
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1557/opl
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adaptive FILTER implementation in c language
Abstract: array antenna SW7432 block diagram of of TMS320C54X TMS320C541 china phone BLOCK diagram phillips Antenna SPRA532 adaptive antenna
Text: Application Report SPRA532 Implementation of an Adaptive Antenna Array Using the TMS320C541 Kim Phillips, Zhong Hu, Keith Blankenship, Zeeshan Siddiqi, Neiyer Correal Virginia Polytechnic Institute Abstract Adaptive antenna arrays are expected to play a key role in meeting the demands of the wireless
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SPRA532
TMS320C541
adaptive FILTER implementation in c language
array antenna
SW7432
block diagram of of TMS320C54X
TMS320C541
china phone BLOCK diagram
phillips Antenna
SPRA532
adaptive antenna
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anode gate thyristor
Abstract: No abstract text available
Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author
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5x1014
1x107
DEAR0000112)
anode gate thyristor
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Abstract: No abstract text available
Text: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200
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Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC
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934-h
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Abstract: No abstract text available
Text: 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation Siddarth Sundaresan, Madhuri Marripelly, Svetlana Arshavsky, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20166, USA email: siddarth.sundaresan@genesicsemi.com Abstract— This paper reports on ultra-high voltage, >15 kV SiC
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Trench MOSFET Termination Structure
Abstract: 100 ampere FET datasheet 30VN fet n-channel switch mohm
Text: New Trench MOSFET Technology for DC-DC Converter Applications Ling Ma, Adam Amali, Siddharth Kiyawat, Ashita Mirchandani, Donald He, Naresh Thapar, Ritu Sodhi, Kyle Spring, Dan Kinzer International Rectifier Corporation, 233 Kansas Street, El Segundo, CA 90245
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ISPSD-99
ISPSD-00
PCIM-01
ISPSD-02
ISPSD-01
Trench MOSFET Termination Structure
100 ampere FET datasheet
30VN
fet n-channel switch mohm
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Abstract: No abstract text available
Text: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's June 15-19, 2014 Waikoloa, Hawaii Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Siddarth Sundaresan, Stoyan Jeliazkov, Hany Issa, Brian Grummel, Ranbir Singh
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Text: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky
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Text: 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor, Inc. Dulles, VA 20166, USA. ranbir@ieee.org
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Abstract: No abstract text available
Text: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first
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Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.
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DE-FG02-07ER84712)
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29152 WT
Abstract: MIC29502 ADJ
Text: Micrel, Inc. MIC29150/29300/29500/29750 MIC29150/29300/29500/29750 High-Current Low-Dropout Regulators General Description Features The MIC29150/29300/29500/29750 are high current, high accuracy, low-dropout voltage regulators. Using Micrel's proprietary Super βeta PNP process with a PNP pass element, these regulators feature 300mV to 370mV full load
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MIC29150/29300/29500/29750
MIC29150/29300/29500/29750
300mV
370mV
M9999-111005
29152 WT
MIC29502 ADJ
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Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data KE02 Sub-Family Data Sheet Document Number MKE02P64M20SF0 Rev 3, 07/2013 MKE02P64M20SF0 Supports the following: MKE02Z16VLC2 R , MKE02Z32VLC2(R), MKE02Z64VLC2(R), MKE02Z16VLD2(R), MKE02Z32VLD2(R), MKE02Z64VLD2(R),
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MKE02P64M20SF0
MKE02Z16VLC2
MKE02Z32VLC2
MKE02Z64VLC2
MKE02Z16VLD2
MKE02Z32VLD2
MKE02Z64VLD2
MKE02Z32VLH2
MKE02Z64VLH2
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Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data KE02 Sub-Family Document Number MKE02P64M20SF0 Rev 3, 07/2013 MKE02P64M20SF0 Supports the following: MKE02Z16VLC2 R , MKE02Z32VLC2(R), MKE02Z64VLC2(R), MKE02Z16VLD2(R), MKE02Z32VLD2(R), MKE02Z64VLD2(R), MKE02Z32VLH2(R),
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MKE02P64M20SF0
MKE02Z16VLC2
MKE02Z32VLC2
MKE02Z64VLC2
MKE02Z16VLD2
MKE02Z32VLD2
MKE02Z64VLD2
MKE02Z32VLH2
MKE02Z64VLH2
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Abstract: No abstract text available
Text: 6 D RA WI NG THIS MADE IN D RA WI NG THIRD IS A NGL E ONRUBLI S H E D , COPYRIGHT 5 PROJECTION RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. D D STAMPED, 5-2 IN KNEAR S I D E N24308D4-12F INK STANDDD, DAD D: SIDD SDD
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N24308D4-12F
IN55RY
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Abstract: No abstract text available
Text: 3 6 THIS O DRAWI NG COPYRIGHT 15 UNPUBLISHED. 19 RELEASED BY A MP I NCORP ORATE D. ALL FOR PUBLICATION RIGHTS LOC RESERVED. DIST REVISIONS DF LTR DESCRIPTION R 1 IS DESIGNED ISSÜD PER 0G3D-0467-03 DONF ODM OF DWN APVD 3-04 JMK LO THD 4308 W I DD DD ÜSDD
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0G3D-0467-03
HDD-33
NID-T-10737
HIN-0-14550
11JUN97
13-N0V-02
usOl6412
/home/osOI6412/docmod
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