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    SID MICROELECTRONICS Search Results

    SID MICROELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    SID MICROELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    br b2d

    Abstract: ST5080 DIP20 LSD23 PLCC28 ST5421 ST5421CFN ST5421CP ST5451 "di code"
    Text: ST5421 SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA September 1995 PLCC28 ORDERING NUMBERS: ST5421CP ST5421CFN PIN CONNECTIONS Top views FSA LO- LO+ LI+ 4 3 2 1 28 27 26 LI- VCC LSD- DIP20 VCC 5 25 GND N.C. 6 24 GND MCLK/XTAL 7 23 MO XTAL2 8


    Original     		PDF ST5421 PLCC28 ST5421CP ST5421CFN DIP20 br b2d ST5080 DIP20 LSD23 PLCC28 ST5421 ST5421CFN ST5421CP ST5451 "di code"

    SIM 900 file attachment email AT COMMANDS

    Abstract: PROCOMM PLUS ATS10 ATS12 MNP10 GGSN ST Microelectronics date code format
    Text: iMODEM: COMMAND REFERENCE MANUAL Supported Commands, and Definitions and References for the following iMODEM Products: ANALOG iMODEM Models CH2166 CH2166A GPRS/RF iMODEM Models CH2168 CH2168A 2008 Cermetek Microelectronics, Inc. Page 1 Document No. 612-0004 Rev. C1 12/08


    Original     		PDF CH2166 CH2166A CH2168 CH2168A SIM 900 file attachment email AT COMMANDS PROCOMM PLUS ATS10 ATS12 MNP10 GGSN ST Microelectronics date code format

    S6B0724A01-B0CY

    Abstract: TM11264JCCWG S6B0724A01 ibl30
    Text: SPECIFICATION FOR LCD MODULE Model No. TM11264JCCWG Prepared by: Date: Checked by : Date: Verified by : Date: Approved by: Date: TIANMA MICROELECTRONICS CO., LTD Ver.1.0 REVISION RECORD Date Ref. Page Revision No. 1/22 Revision Items Check & Approval Ver.1.0


    Original     		PDF TM11264JCCWG S6B0724A01-B0CY 02mma0 S6B0724A01-B0CY TM11264JCCWG S6B0724A01 ibl30

    IN914

    Abstract: W27LE520 W27LE520S-70 W27LE520S-90 W27LE520W-70 W27LE520W-90
    Text: Preliminary W27LE520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


    Original     		PDF W27LE520 W27LE520 IN914 W27LE520S-70 W27LE520S-90 W27LE520W-70 W27LE520W-90

    IN914

    Abstract: W27E520 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
    Text: W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL


    Original     		PDF W27E520 W27E520 IN914 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90

    IN914

    Abstract: W27E520 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
    Text: Advance Information W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


    Original     		PDF W27E520 W27E520 IN914 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90

    5.5V .22f capacitor

    Abstract: .22F capacitor 3.3V IN914 W27C520 W27C520S-70 W27C520S-90 W27C520W-70 W27C520W-90
    Text: Preliminary W27C520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8


    Original     		PDF W27C520 W27C520 5.5V .22f capacitor .22F capacitor 3.3V IN914 W27C520S-70 W27C520S-90 W27C520W-70 W27C520W-90

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


    Original     		PDF W27E520

    st 9318

    Abstract: LINE FEED ISDN h9318 AN-492 C1995 TP3076 TP3401 TP3410 TP3420 TP3421
    Text: WHAT IS ISDN The Integrated Services Digital Network commonly called ISDN is simply an all digital communications network which offers its users a variety of different capabilities In due time the ISDN will change the way that many if not all of us communicate be it through voice data or video communication To that end the ISDN is an invisible rebuilding of the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W29EE011 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations


    Original     		PDF W29EE011 W29EE011 12-volt

    IN914

    Abstract: W27L520 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 173-Mil
    Text: Preliminary W27L520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


    Original     		PDF W27L520 W27L520 IN914 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 173-Mil

    IN914

    Abstract: W27L520 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 AD4813
    Text: W27L520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data


    Original     		PDF W27L520 W27L520 IN914 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 AD4813

    Untitled

    Abstract: No abstract text available
    Text: Advance Information W27LE520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


    Original     		PDF W27LE520 W27LE520

    W29EE011-15

    Abstract: W29EE011P-90 W29EE011 W29EE011-90
    Text: W29EE011 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations


    Original     		PDF W29EE011 W29EE011 12-volt W29EE011-15 W29EE011P-90 W29EE011-90

    Untitled

    Abstract: No abstract text available
    Text: W29C020C 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C020C results in fast write (erase/program)


    Original     		PDF W29C020C W29C020C 12-volt

    W29C040P-70B

    Abstract: W29C040 W29C040-12 W29C040T-90
    Text: W29C040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/


    Original     		PDF W29C040 W29C040 12-volt W29C040P-70B W29C040-12 W29C040T-90

    CDH15

    Abstract: No abstract text available
    Text: 2,0 MAX>- 1 2 3 4 5 6 7 8 9 10 RESETB CS1B - RS VDD SCLK SID 0.7 FRDNT vss VDUT C3-IC1+ 11 12 13 ci- 14 15 16 17 18 19 20 VR VO VI C2-IC2- •PRO TECTIVE GLUE UV TAPE' 8901918953908900 A PRO TECTIVE TAPE V2 V3 V4 NC • HEATSEAL DETAIL Ai NOTES STN o r FSTN


    OCR Scan     		PDF CDH15 S6BO715All-B0CZ KS0715UM- TM9632A CDH15

    bt 1696

    Abstract: ST5080 TFK 202 tfk 811 s
    Text: r= 7 * li. S G S -T H O M S O N [ ¡ » I M I I L I » « S T 5 4 2 1 SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA . • . . ■ ■ ■ SINGLE CHIP 4 WIRES 192kb/s TRANS­ CEIVER FULLY COMPLYING WITH CCITT 1.430 ISDN BASIC ACCESS HANDLING 144kb/s


    OCR Scan     		PDF 192kb/s 144kb/s ST5451 DIP20 PLCC28 ST5421 ST5421CFN ST5421 bt 1696 ST5080 TFK 202 tfk 811 s

    schematic diagram tv sharp

    Abstract: tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp
    Text: NEW PRODUCT INFORMATION Primary Regulator PQ1PF1 O U T LIN E D IM E N S IO N S G E N E R A L D E S C R IP T IO N U n it : m m Sharp's PQ 1PF1 achieved an integration o f power M O SFET and control IC, used for primary sid e o f sw itch in g p ow er su p p lies. T h is d e v ic e m eets the n eed for m ore


    OCR Scan     		PDF O-220 K22080 ECN-95041 schematic diagram tv sharp tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp

    Untitled

    Abstract: No abstract text available
    Text: UNITED MICROELECTRONICS D E j ^32SfllE OOOOED4 □ f ~ D ~T*J*S*07-07_ U^991230 C/D Tone/Pulse Dialeri FEATURES PIN CONFIGURATION • Tone/Pulse Switchable Touch Key or Slide Switch ■ 32 Digit Capacity for Redialing ■ Automatic Mix Redialing (Last Number Redial) of


    OCR Scan     		PDF 32SfllE 580ms) 91210C 91210D

    1683K

    Abstract: 1683-K
    Text: MSK DWG. NO. REV. SHEET SCALE SIZE 1711-12459 C 1 OF 13 NTS A 8218 Rev J REVISIONS REV. ECO NO. A B C DATE APPROVED RLSD 13329 13808 13884 - 11/30/05 01/23/06 07/11/06 C. HEISELMAN C. HEISELMAN C. HEISELMAN „ G/ÿ/èfe S REVISION REVISION INDEX SHEET c 2


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TECCOR ELECTRONICS DO-214AA P1200S, P2000S SIDACtrt ' I“ Solid State O vervoltage Protection Features • Designed specifically for Lucent Microelectronics LCAS L7581/2/3 Solid State Switches • Bellcore 1089 and ITU K.17 - K.21 Compliant • Surge Ratings up to 500A, 2x10|js


    OCR Scan     		PDF DO-214AA P1200S, P2000S L7581/2/3 P1200S P2000S. 5x320 10x560ps

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: /= T ^ 7/ S G S -T H O M S O N R TRIPLE OUTPUT POWER SUPPLY CONTROLLER • DUAL PWM BUCK CONTROLLERS 3.3V and 5.1V ■ 12V/120m ALINEAR REGULATOR ■ DUALSYN C H RECTIFIERS DRIVERS ■ 96% EFFICIENCY ACHIEVABLE ■ 50 jjA @ 1 2V IN STAND BY ■ 5.5V TO 20V SUPPLY VOLTAGE


    OCR Scan     		PDF 2V/120m TQFP32 L4992