anode gate thyristor
Abstract: No abstract text available
Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author
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5x1014
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DEAR0000112)
anode gate thyristor
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thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.
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703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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GA080TH65-CAU
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Abstract: No abstract text available
Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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GA060TH65-CAU
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Abstract: No abstract text available
Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA060TH65
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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GA040TH65-CAU
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Untitled
Abstract: No abstract text available
Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA040TH65
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Untitled
Abstract: No abstract text available
Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA060TH65
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Abstract: No abstract text available
Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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GA040TH65-CAU
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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GA060TH65-CAU
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Untitled
Abstract: No abstract text available
Text: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA080TH65
OT-227
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Untitled
Abstract: No abstract text available
Text: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA080TH65
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Untitled
Abstract: No abstract text available
Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA040TH65
OT-227
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
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MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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Abstract: No abstract text available
Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.
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DE-FG02-07ER84712)
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Untitled
Abstract: No abstract text available
Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have
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r1996,
XVI-14.
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P-Channel IGBT
Abstract: No abstract text available
Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to
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40C1500
Abstract: T1200 T1200N T1209N k005
Text: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N
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T1200N
T1209N
GG0b213
41787at
T1H0S14
17/Detall
40C1500
T1200
T1209N
k005
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DIN40040
Abstract: T35N TM200
Text: E G-AKTIEN6ESELLSCHAFT SIC B • 005^415 QDGbü7fl 1 ■AE 3G T35N Typenrelhe/Type range_T 3 5 N 400* 600 800 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm, Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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uv flame sensor
Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor
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2771J
161-IMO
uv flame sensor
thermal conductivity sensor
27713
4h sic
ballistic sensor
Cree Microwave
cree package structure
X 1017
sac 326
2771J
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s2177
Abstract: No abstract text available
Text: E ¿-A K TIEN G ESELLSCH A FT SIC D • D02T41S OQDblOB 4 ■ AE66 T85N Typenreihe/Type ränge T85N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m , U r h m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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D02T41S
s2177
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Untitled
Abstract: No abstract text available
Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic
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Afl72fln
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T218N
Abstract: No abstract text available
Text: G- A K T I ENG ES EL LS CH AF T SIC D • 002^415 Q0Gbl42 3 ■ AEGG 0 T218N Typenreihe/Type range_ T218N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte UoRMi U r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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00Gbl42
T218N
T218N
125cC
rsin23
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