TLWBG76
Abstract: TLWB76 TLWR76 TLWTG76 TLWW76 TLWY76
Text: TLW.76. Vishay Telefunken TELUX Color Red Yellow True Green Blue Green Blue White Type TLWR76. TLWY76. TLWTG76. TLWBG76. TLWB76. TLWW76. Technology AlInGaP on GaAs AlInGaP on GaAs InGaN on SiC InGaN on SiC InGaN on SiC InGaN / YAG on SiC Angle of Half Intensity
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TLWR76.
TLWY76.
TLWTG76.
TLWBG76.
TLWB76.
TLWW76.
D-74025
10-May-00
TLWBG76
TLWB76
TLWR76
TLWTG76
TLWW76
TLWY76
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TLMB3140
Abstract: TLMBG3100 TLMTG3100
Text: TLMB/TLMBG/TLMTG31. Preliminary Vishay Semiconductors High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing
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TLMB/TLMBG/TLMTG31.
TLMB3140
TLMBG3100
TLMTG3100
D-74025
16-Mar-01
TLMB3140
TLMBG3100
TLMTG3100
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SEMISOUTH
Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC
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-55oC
200oC
260oC*
MIL-PRF-19500
O-257)
O-257
SEMISOUTH
1200v 30A to247
JFETs SiC
jfets
downhole
ASJD1200R045
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Untitled
Abstract: No abstract text available
Text: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already
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25kHz.
50kHz,
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515 TCI
Abstract: LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01
Text: TLMB/TLMBG/TLMTG31. Preliminary Vishay Telefunken High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing
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TLMB/TLMBG/TLMTG31.
TLMB3140
TLMBG3100
TLMTG3100
D-74025
16-Mar-01
515 TCI
LED wavelength 440 smd
TLMB3140
TLMBG3100
TLMTG3100
16-MAR-01
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Cree SiC diode die
Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering
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200-V
CPWR-AN01,
Cree SiC diode die
snubber CIRCUITS mosfet
ixys dsei
500 watt smps circuit diagram
FULL WAVE mosfet RECTIFIER CIRCUITS
CPWR-AN01
IXYS DSEI 12-06A
Cree SiC MOSFET
4600 mosfet
6A irfp450 mosfet
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TLMB310
Abstract: TLMB3100 TLMB3101 TLMB3104 TLMB3106
Text: TLMB310. Vishay Semiconductors SMD LED in P–LCC–2 Package Color Blue Type Technology TLMB310. GaN on SiC Angle of Half Intensity ±ö 60° Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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TLMB310.
D-74025
29-Sep-00
TLMB310
TLMB3100
TLMB3101
TLMB3104
TLMB3106
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TLHB580
Abstract: TLHB5800 TLHB5801
Text: TLHB580. Vishay Semiconductors High Efficiency Blue LED, ø 5 mm Untinted Non - Diffused Package Color Blue Type Technology TLHB580. GaN on SiC Angle of Half Intensity ±ö 4° 94 8631 Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB580.
D-74025
04-Oct-00
TLHB580
TLHB5800
TLHB5801
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TLCB5800
Abstract: TLCR5800 TLCTG5800 TLCY5800
Text: TLC.58. Vishay Semiconductors Ultrabright LED, ø 5 mm Untinted Non-Diffused Color Type Technology Angle of Half Intensity ±ö Red TLCR58. AlInGaP on GaAs 4° Yellow TLCY58. AlInGaP on GaAs 4° True Green TLCTG58. InGaN on SiC 4° Blue TLCB58. InGaN on SiC
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TLCR58.
TLCY58.
TLCTG58.
TLCB58.
D-74025
05-Mar-02
TLCB5800
TLCR5800
TLCTG5800
TLCY5800
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TLHB420
Abstract: TLHB4200 TLHB4201
Text: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ø 3 mm Tinted Non–Diffused Package Color Blue Type Technology TLHB420. GaN on SiC Angle of Half Intensity ±ö 22° 94 8488 Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB420.
D-74025
04-Oct-00
TLHB420
TLHB4200
TLHB4201
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TLCY5800
Abstract: TLCB5800 TLCR5800 TLCTG5800
Text: TLC.58. Vishay Semiconductors Ultrabright LED, ø 5 mm Untinted Non-Diffused Color Type Technology Angle of Half Intensity ±ö Red TLCR58. AlInGaP on GaAs 4° Yellow TLCY58. AlInGaP on GaAs 4° True Green TLCTG58. InGaN on SiC 4° Blue TLCB58. InGaN on SiC
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TLCR58.
TLCY58.
TLCTG58.
TLCB58.
D-74025
05-Mar-02
TLCY5800
TLCB5800
TLCR5800
TLCTG5800
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TLCB5100
Abstract: TLCR5100 TLCTG5100 TLCY5100
Text: TLC.51. Vishay Semiconductors Ultrabright LED, ø 5 mm Untinted Non-Diffused Color Type Technology Angle of Half Intensity ±ö Red TLCR51. AlInGaP on GaAs 9° Yellow TLCY51. AlInGaP on GaAs 9° True Green TLCTG51. InGaN on SiC 9° Blue TLCB51. InGaN on SiC
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TLCR51.
TLCY51.
TLCTG51.
TLCB51.
D-74025
05-Mar-02
TLCB5100
TLCR5100
TLCTG5100
TLCY5100
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TLCB5100
Abstract: TLCR5100 TLCTG5100 TLCY5100 05-MAR-02 TCVF
Text: TLC.51. Vishay Semiconductors Ultrabright LED, ø 5 mm Untinted Non-Diffused Color Type Technology Angle of Half Intensity ±ö Red TLCR51. AlInGaP on GaAs 9° Yellow TLCY51. AlInGaP on GaAs 9° True Green TLCTG51. InGaN on SiC 9° Blue TLCB51. InGaN on SiC
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TLCR51.
TLCY51.
TLCTG51.
TLCB51.
D-74025
05-Mar-02
TLCB5100
TLCR5100
TLCTG5100
TLCY5100
05-MAR-02
TCVF
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TLHB540
Abstract: TLHB5400 TLHB5401
Text: TLHB540. Vishay Semiconductors High Efficiency Blue LED, ø 5 mm Tinted Diffused Package Color Blue Type Technology TLHB540. GaN on SiC Angle of Half Intensity ±ö 30° Description 96 11505 This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB540.
D-74025
04-Oct-00
TLHB540
TLHB5400
TLHB5401
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TLHB510
Abstract: TLHB5100 TLHB5101 TLHB5102
Text: TLHB510. Vishay Semiconductors High Efficiency Blue LED, ø 5 mm Untinted Non - Diffused Package Color Blue Type Technology TLHB510. GaN on SiC Angle of Half Intensity ±ö 9° 94 8631 Description This device has been designed in GaN on SiC technology to meet the increasing demand for high
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TLHB510.
D-74025
04-Oct-00
TLHB510
TLHB5100
TLHB5101
TLHB5102
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CCM PFC inductor analysis
Abstract: PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm
Text: SiC Schottky Diodes in Power Factor Correction By Stuart Hodge Jr., Senior Member IEEE, Cree Inc., Efficiency gains resulting from the use of highvoltage SiC rectifiers in PFC boost converters can be used to increase power output, increase switching frequency for a smaller design or
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PCIM-20-CU
CCM PFC inductor analysis
PFC design
what is THERMAL RUNAWAY IN RECTIFIER MOSFET
boost pfc operate in ccm
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15846
Abstract: TLHB540 TLHB5400 TLHB5401
Text: TLHB540. Vishay Telefunken High Efficiency Blue LED, ø 5 mm Tinted Diffused Package Color Blue Type TLHB540. Technology Angle of Half Intensity ±ö 30° GaN on SiC Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB540.
D-74025
04-Feb-99
15846
TLHB540
TLHB5400
TLHB5401
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Untitled
Abstract: No abstract text available
Text: TLHB540. Vishay Telefunken High Efficiency Blue LED, ø 5 mm Tinted Diffused Package Color Blue Type TLHB540. Technology Angle of Half Intensity ±ö 30° GaN on SiC Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB540.
D-74025
04-Feb-99
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PDF
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Untitled
Abstract: No abstract text available
Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery
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SCH2080KE
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: TLMB310. Vishay Telefunken SMD LED in P–LCC–2 Package Color Blue Type TLMB310. Technology GaN on SiC Angle of Half Intensity ±ö 60° Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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TLMB310.
D-74025
04-Feb-99
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PDF
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Untitled
Abstract: No abstract text available
Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery
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SCH2080KE
O-247
R1102B
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TLHB420
Abstract: TLHB4200 TLHB4201
Text: TLHB420. Vishay Telefunken High Efficiency Blue LED, ø 3 mm Tinted Non–Diffused Package Color Blue Type TLHB420. Description Technology GaN on SiC Angle of Half Intensity ±ö 22° 94 8488 This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB420.
D-74025
04-Feb-99
TLHB420
TLHB4200
TLHB4201
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PDF
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TLHB440
Abstract: TLHB4400 TLHB4401
Text: TLHB440. Vishay Telefunken High Efficiency Blue LED, ø 3 mm Tinted Diffused Package Color Blue Type TLHB440. Description Technology GaN on SiC Angle of Half Intensity ±ö 30° 94 8488 This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing
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TLHB440.
D-74025
04-Feb-99
TLHB440
TLHB4400
TLHB4401
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PDF
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TLMB310
Abstract: TLMB3100 TLMB3101 TLMB3104 TLMB3106
Text: TLMB310. Vishay Telefunken SMD LED in P–LCC–2 Package Color Blue Type TLMB310. Technology GaN on SiC Angle of Half Intensity ±ö 60° Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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TLMB310.
D-74025
13-Jul-99
TLMB310
TLMB3100
TLMB3101
TLMB3104
TLMB3106
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PDF
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