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    SIC MOSFET 2014 Search Results

    SIC MOSFET 2014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation
    TW045Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.062 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    SIC MOSFET 2014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    PDF APTMC60TLM14CAG

    sic mosfet isolated gate driver

    Abstract: TBD0805 CPWR-AN10
    Text: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:


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    PDF CPWR-AN10, sic mosfet isolated gate driver TBD0805 CPWR-AN10

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    Abstract: No abstract text available
    Text: APTMC120AM09CT3AG VDSS = 1200V RDSon = 9mΩ max @ Tj = 25°C ID = 295A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC120AM09CT3AG

    100A 1000V mosfet

    Abstract: No abstract text available
    Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC170AM30CT1AG 100A 1000V mosfet

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    Abstract: No abstract text available
    Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC120AM12CT3AG

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    Abstract: No abstract text available
    Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC170AM60CT1AG

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    Abstract: No abstract text available
    Text: APTMC120AM16CD3AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 16mΩ typ @ Tj = 25°C ID = 98A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC120AM16CD3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC120AM25CT3AG

    Cree SiC MOSFET

    Abstract: No abstract text available
    Text: SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management Two factors are shaping the development of advanced power conversion systems - increasingly stringent standards for energy efficiency, especially in solar and UPS applications, and the need to decrease the overall system‘s costs for the


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    Abstract: No abstract text available
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


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    PDF SCH2080KE O-247 R1102B

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    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


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    PDF SCH2080KE O-247 R1102B

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM08CD3AG VDSS = 1200V RDSon = 8mΩ typ @ Tj = 25°C ID = 250A @ Tc = 25°C Phase leg MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


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    PDF APTMC120AM08CD3AG

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    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance


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    PDF CPM2-1200-0025B CPM2-1200-0025B

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    Abstract: No abstract text available
    Text: APTMC120TAM12CTPAG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


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    PDF APTMC120TAM12CTPAG

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    Abstract: No abstract text available
    Text: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


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    PDF APTMC120TAM17CTPAG

    Untitled

    Abstract: No abstract text available
    Text: APTC60AM24SCTG VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2


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    PDF APTC60AM24SCTG

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    Abstract: No abstract text available
    Text: APTC60HM70SCTG VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


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    PDF APTC60HM70SCTG

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    Abstract: No abstract text available
    Text: APTC60AM35SCTG VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


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    PDF APTC60AM35SCTG

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    Abstract: No abstract text available
    Text: APTC60HM45SCTG VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


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    PDF APTC60HM45SCTG

    MYXMH0600-20CEN

    Abstract: silicon carbide
    Text: SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Product Overview Features y r a in Benefits • Essentially no switching losses • High voltage 600V isolation • Higher Efficiency • High current 20A • High temperature 210°C m i l e r


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    PDF MYXMH0600-20CEN MYXMH0600-20CEN silicon carbide

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    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


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    PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182

    Untitled

    Abstract: No abstract text available
    Text: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


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    PDF S2306 160mW R1102B

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    Abstract: No abstract text available
    Text: IXFN50N120SiC SiC Power MOSFET ID25 = 47 A VDSS = 1200 V RDS on max = 50 mΩ Part number IXFN50N120SiC S G (2) D S Backside: isolated E153432 t D (3) iv e G Features / Advantages: t a S (1, 4) Applications: Package: SOT-227B (minibloc) • Solar inverters


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    PDF IXFN50N120SiC E153432 OT-227B

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    Abstract: No abstract text available
    Text: S2308 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 280mW ID 14A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


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    PDF S2308 280mW R1102B