Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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sic mosfet isolated gate driver
Abstract: TBD0805 CPWR-AN10
Text: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:
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CPWR-AN10,
sic mosfet isolated gate driver
TBD0805
CPWR-AN10
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Untitled
Abstract: No abstract text available
Text: APTMC120AM09CT3AG VDSS = 1200V RDSon = 9mΩ max @ Tj = 25°C ID = 295A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM09CT3AG
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100A 1000V mosfet
Abstract: No abstract text available
Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM30CT1AG
100A 1000V mosfet
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Untitled
Abstract: No abstract text available
Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM12CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM60CT1AG
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Untitled
Abstract: No abstract text available
Text: APTMC120AM16CD3AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 16mΩ typ @ Tj = 25°C ID = 98A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM16CD3AG
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Untitled
Abstract: No abstract text available
Text: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM25CT3AG
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Cree SiC MOSFET
Abstract: No abstract text available
Text: SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management Two factors are shaping the development of advanced power conversion systems - increasingly stringent standards for energy efficiency, especially in solar and UPS applications, and the need to decrease the overall system‘s costs for the
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Untitled
Abstract: No abstract text available
Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery
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SCH2080KE
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery
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SCH2080KE
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: APTMC120AM08CD3AG VDSS = 1200V RDSon = 8mΩ typ @ Tj = 25°C ID = 250A @ Tc = 25°C Phase leg MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM08CD3AG
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance
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CPM2-1200-0025B
CPM2-1200-0025B
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Untitled
Abstract: No abstract text available
Text: APTMC120TAM12CTPAG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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APTMC120TAM12CTPAG
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Untitled
Abstract: No abstract text available
Text: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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APTMC120TAM17CTPAG
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Untitled
Abstract: No abstract text available
Text: APTC60AM24SCTG VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2
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APTC60AM24SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60HM70SCTG VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM70SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60AM35SCTG VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM35SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60HM45SCTG VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM45SCTG
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MYXMH0600-20CEN
Abstract: silicon carbide
Text: SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Product Overview Features y r a in Benefits • Essentially no switching losses • High voltage 600V isolation • Higher Efficiency • High current 20A • High temperature 210°C m i l e r
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MYXMH0600-20CEN
MYXMH0600-20CEN
silicon carbide
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Untitled
Abstract: No abstract text available
Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features • VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards
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GA03IDDJT30-FR4
GA03IDDJT30-FR4
FOD3182
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Untitled
Abstract: No abstract text available
Text: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2306
160mW
R1102B
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Untitled
Abstract: No abstract text available
Text: IXFN50N120SiC SiC Power MOSFET ID25 = 47 A VDSS = 1200 V RDS on max = 50 mΩ Part number IXFN50N120SiC S G (2) D S Backside: isolated E153432 t D (3) iv e G Features / Advantages: t a S (1, 4) Applications: Package: SOT-227B (minibloc) • Solar inverters
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IXFN50N120SiC
E153432
OT-227B
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Untitled
Abstract: No abstract text available
Text: S2308 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 280mW ID 14A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2308
280mW
R1102B
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