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Abstract: No abstract text available
Text: TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed to deliver high system efficiencies by a drastic reduction in the IGBT and FWD dynamic losses GeneSiC Semiconductor, Inc. has recently launched 1200 V IGBT copack products that
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JFET siced
Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
Text: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany
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10KV SiC
Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA
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mosfet equivalent
Abstract: mosfet base inverter with chargers circuit SKiiP 83 AC 12 i t 46 fy074pa SKIIP 33 UPS 06 V23990-P769-A-PM 25AC12T4v semikron skiip 83 SKiiP 31 AC 12 T2
Text: POWER MODULES 2015 � 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS. Vincotech, an independent company within the Mitsubishi Electric Corporation, is a market leader and reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power
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SCS205KG
Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.
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000A-class)
56P6733E
1500SG
SCS205KG
SCS220KE2
SCS240KE2
SCS212AJ
SCS230KE2
SCS210AJ
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SiC IGBT High Power Modules
Abstract: 10-F006NPA070FP-P969F09
Text: Power Modules Next-Gen, 3-Level Inverter Power Modules in flow0 Housing: Up with Efficiency and Performance, Down with Costs nd flowNPC 0 2 gen Dimension: 33 x 66 x 12 mm³ Vincotech is pleased to announce the next generation of NPC modules in the flow 0 housing. Featuring the latest semiconductor technology, they are the
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Feb-13
SiC IGBT High Power Modules
10-F006NPA070FP-P969F09
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VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
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FZ062UA040FP
Abstract: 8kw pfc
Text: Power Modules Power Modules for Active Power Factor Correction Vincotech is pleased to announce the release of new products, specifically designed for active power factor correction PFC . flow0 housing 12 x 66 x 33mm General Features: • Dual boost circuits for paralleled, interleaved or bridgeless switching mode
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20kHz
400kHz
FZ062TA030FB02
FZ062TA040FB02
400kHz)
150kHz)
250kHz)
100kHz)
FZ062UA040FP
8kw pfc
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Untitled
Abstract: No abstract text available
Text: QID1210006 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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QID1210006
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: QID1210005 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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QID1210005
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Abstract: No abstract text available
Text: QID1210005 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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QID1210005
Amperes/1200
S5-7272
QID1210005
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0217C
Abstract: SiC IGBT High Power Modules AC welder IGBT circuit igbt 1200V 40A module Carbide Schottky Diode IGBT snubber for inductive load IGBT 600V 200A time switch speed off
Text: QID1210006 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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QID1210006
Amperes/1200
S-7272
QID1210006
0217C
SiC IGBT High Power Modules
AC welder IGBT circuit
igbt 1200V 40A module
Carbide Schottky Diode
IGBT snubber for inductive load
IGBT 600V 200A time switch speed off
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Abstract: No abstract text available
Text: QID1210006 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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Untitled
Abstract: No abstract text available
Text: QID1210005 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are
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SiC IGBT High Power Modules
Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
Text: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs
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B133-H9049-G2-X-7600
SiC IGBT High Power Modules
SiC JFET
SiC-JFET
infineon power cycling
ups high power FET Transistor
"silicon carbide" FET
silicon carbide JFET
high power FET Transistor for ups
infineon igbt power solar inverter
silicon carbide j-fet
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1287-standard
Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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10-FZ06NBA075SA-P916L33
Abstract: No abstract text available
Text: Power Modules Vincotech Releases New Family of Dual & Symmetric Boosters flowBOOST 0 - Excellent performance for 1200V applications Dual Booster IGBT flowBOOST 0: Different applications demand different modules, and each has a specific set of requirements. Some applications demand bypass diodes. Others
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V23990-P621-F68-PM
V23990-P629-F68-PM
10-FZ06NBA075SA-P916L33
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Untitled
Abstract: No abstract text available
Text: designfeature Deepak Veereddy, Device Engineer, Eric Lieser, Senior Field Applications Engineer Michael DiGangi, Chief Business Development Officer, GeneSiC Semiconductor, Inc. 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses A recently launched 1200 V
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GA100XCP12
55-kW
com/micnotes/APT0408
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IXZ421DF12N100
Abstract: No abstract text available
Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
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kV-10
-500V
-1000V
IXZ421DF12N100
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Untitled
Abstract: No abstract text available
Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.
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GA100XCP12
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mosfet base induction heat circuit
Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map
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MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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Abstract: No abstract text available
Text: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications,
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