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    SI9953DY DUAL MOSFET Search Results

    SI9953DY DUAL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SI9953DY DUAL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si9953DY

    Si9953DY

    Abstract: No abstract text available
    Text: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si9953DY

    Untitled

    Abstract: No abstract text available
    Text: Si9953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si9953DY

    Si4947DY

    Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ or Si6955DQ


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ S-47958--Rev. 15-Apr-96

    SI9953dy dual mosfet

    Abstract: Si4947DY Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ or Si6955DQ


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ S-47958--Rev. 15-Apr-96 SI9953dy dual mosfet

    Si4947DY

    Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96

    Si9947DY

    Abstract: Si9953DY Si4947DY Si6953DQ Si6955DQ si6953
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96 si6953

    Si6953DQ

    Abstract: Si9953DY
    Text: Si9953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.25 @ VGS = -10 V "2.3 0.40 @ VGS = -4.5 V "1.5 Lower profile/smaller sizeĊsee LITE FOOTt equivalent: Si6953DQ S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original     		PDF Si9953DY Si6953DQ P-38796--Rev.

    Si9953DY

    Abstract: No abstract text available
    Text: Si9953DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9953DY 08-Apr-05

    Si9953DY

    Abstract: No abstract text available
    Text: Si9953DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9953DY S-00652--Rev. 27-Mar-00

    Si9953DY

    Abstract: No abstract text available
    Text: Si9953DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9953DY 18-Jul-08

    w17 transistor

    Abstract: d 434 mosfet 2N3904 transistor equivalent to lift control w19 transistor WIRE JUMPER 2N3904 SI9953DY "3 pin jumper"
    Text:  Chips and Technologies, Inc. 2950 Zanker Road San Jose, CA 95134 408 434-0600 CT70/9-96 DK65550/554 PCI Boards - 3.3 V Option This CHIP Tip describes the rework needed on the DK65550/554 PCI board to support 3.3 V panels. On the Rev D1 board this rework has already been implemented in the form of added wires and an extra three-pin jumper located in


    Original     		PDF CT70/9-96 DK65550/554 12VSAFE SI9953DY CT70/9-96 w17 transistor d 434 mosfet 2N3904 transistor equivalent to lift control w19 transistor WIRE JUMPER 2N3904 SI9953DY "3 pin jumper"

    MOSFET dual SOP-8

    Abstract: UPA1712G channel mosfet sop_8 uPA1711 IRF7205 UPA1711G BUZ215 NDS9945 BUZ382 BUZ384
    Text: SINGLE & DUAL N & P CHANNEL MOSFETS SINGLE N & P CHANNEL MOSFETS • • • • • • • • • • The latest comprehensive data to fully support these parts is readily available. SOP-8 DIMENSIONS • • • • • • 5.37 max. TA = 25˚C Op Volt VDSS VGSS


    Original     		PDF PA1701 PA1701A PA1704 PA1700 PA1700A PA1705 PA1702 PA1703 PA1707 PA1706 MOSFET dual SOP-8 UPA1712G channel mosfet sop_8 uPA1711 IRF7205 UPA1711G BUZ215 NDS9945 BUZ382 BUZ384

    P-Channel TrenchFET Power MOSFET SOT-23

    Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
    Text: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other


    Original     		PDF Si4467DY Si6465DQ Si4463DY Si6969DQ Si9434DY Si9433DY Si4425DY Si4435DY-RevA Si9430DY Si9435DY P-Channel TrenchFET Power MOSFET SOT-23 TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    mks01

    Abstract: Royer oscillator Royer oscillator circuit diagram 6562 amplifer MAX781 MAX781CBX MAX781EBX Royer converter siliconix lable code
    Text: 19-0205; Rev 0; 7/94 T KI ION UAT BLE L A EV ILA AVA PDA/Hand-Held Computer Power Controller _Features ♦ +3.3V Step-Down Controller ♦ Dual PCMCIA 2.0 Compatible VPP Outputs 0V/3.3V/5V/12V ♦ Digitally Adjustable Switching Current Source for


    Original     		PDF V/5V/12V) 300kHz 36-Pin MAX781CBX MAX781EBX 1-0032A 127mm 004in. mks01 Royer oscillator Royer oscillator circuit diagram 6562 amplifer MAX781 MAX781CBX MAX781EBX Royer converter siliconix lable code

    mks01

    Abstract: MKS01-SMD MAX7810 22uf 25v capacitor MOSFET Royer oscillator
    Text: 19-0205; Rev 0; 7/94 T KI ION UAT BLE L A EV ILA AVA PDA/Hand-Held Computer Power Controller _Features ♦ +3.3V Step-Down Controller ♦ Dual PCMCIA 2.0 Compatible VPP Outputs 0V/3.3V/5V/12V ♦ Digitally Adjustable Switching Current Source for


    Original     		PDF MAX781 1-0032A 127mm 004in. 36-PIN mks01 MKS01-SMD MAX7810 22uf 25v capacitor MOSFET Royer oscillator

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


    Original     		PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
    Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone


    Original     		PDF U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM U3810BM U4030B U4030B JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band

    Untitled

    Abstract: No abstract text available
    Text: T em ic Dual P-Channel Enhancement-Mode MOSFET Product Summary -2 0 n w w tf t Q i I B A, 0.25 @ VGS = - 1 0 V ±2.3 0.40 @ VGS = -4 .5 V ±1.5 Lower profile/smaller size— see L IT E F O O T equivalent: SÌ6953DQ


    OCR Scan     		PDF 6953DQ P-38796-- 9953DY

    Untitled

    Abstract: No abstract text available
    Text: SÌ9953DY Siliconix A M e m b e r o f th e T E M ic G ro u p Dual P-Channel Enhancement-Mode MOSFET Product Summary V DS r D S on Id (V) (Q) (A) 0.25 @ V Gs = - 1 0 V t2.3 0.40 @ V GS = - 4 .5 V ±1.5 -20 Si S2 Q p S O -8 si [ ~ r ~8~| Da Gì 1 2 "7~| Di


    OCR Scan     		PDF 9953DY AA07446-- Si9953DY

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431