SI9926BDY SPICE DEVICE MODEL Search Results

SI9926BDY SPICE DEVICE MODEL Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPD4164F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4207F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30

SI9926BDY SPICE DEVICE MODEL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si9926BDY SPICE Device Model		Vishay	Dual N-Channel 2.5-V (G-S) MOSFET		Original	PDF

SI9926BDY SPICE DEVICE MODEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si9926BDY Abstract: No abstract text available Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9926BDY 04-Aug-03	PDF
Si9926BDY Abstract: Si9926BDY SPICE Device Model Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9926BDY 18-Jul-08 Si9926BDY SPICE Device Model	PDF
Si9926BDY Abstract: No abstract text available Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9926BDY 01-Jun-04	PDF
Dual Gate mosfet spice Abstract: Si9926BDY Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9926BDY S-60410Rev. 20-Mar-06 Dual Gate mosfet spice	PDF
gs 069 Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04	PDF