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    Vishay Siliconix SI4814BDY-T1-E3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    DigiKey SI4814BDY-T1-E3 Reel
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    RS SI4814BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4814BDY-T1-GE3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    DigiKey SI4814BDY-T1-GE3 Reel
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    Vishay Siliconix SI4814BDYE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4814BDYE3 950
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    SI4814 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4814BDY-T1-E3 Vishay Dual N-channel 30-v (d-s) Mosfet With Schottky Diode Original PDF
    SI4814BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF
    SI4814BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF
    Si4814DY Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF
    SI4814DY Vishay Telefunken Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF

    SI4814 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


    Original     		PDF Si4814DY S-31421â 07-Jul-03

    Si4814DY

    Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
    Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:


    Original     		PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814DY-T1 IDM-40

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    475224

    Abstract: 6803 AN609 92360 75574n
    Text: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4814BDY AN609 02-Mar-06 475224 6803 92360 75574n

    SI4814DY-T1-E3

    Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1
    Text: Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3 Si4814BDY-T1 Replaces Si4814DY-T1


    Original     		PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814BDY-T1 Si4814DY-T1 10-Nov-06 56 pF CH

    resistor 220k

    Abstract: JMK325BJ106MN 552 diode SANYO 220uF 16V datasheet capacitor 270pF SILICONIX 2N7002 Si4814DY BSTR1 2n7002 siliconix resistor 100k ohm
    Text: 5V Input, Digitally Selectable 1V/1.2V Output at 6A 4.75V to 5.25V VIN C1 10uF 6V X5R 5 IN 2 COMP DH U1 MAX1954 C3 22pF 10 8 C4 0.1uF N1 1/2 Si4814DY 9 L1 1.5uH DO3316P -152HC 1V@6A VOUT LX DL N3 2N7002 ENABLE 1 HSD BST R1 220k C2 270pF C5 22uF 6V X5R 2x


    Original     		PDF MAX1954 Si4814DY DO3316P -152HC 2N7002 270pF 220uF 20MHz resistor 220k JMK325BJ106MN 552 diode SANYO 220uF 16V datasheet capacitor 270pF SILICONIX 2N7002 BSTR1 2n7002 siliconix resistor 100k ohm

    CH21212

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original     		PDF Si4814BDY S-50342--Rev. 28-Feb-05 CH21212

    Si4814DY

    Abstract: No abstract text available
    Text: Si4814DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V 8.4 FEATURES


    Original     		PDF Si4814DY S-04544--Rev. 20-Aug-01

    si4814b

    Abstract: Si4814BDY-T1-E3 si4814bdy
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY 18-Jul-08 si4814b Si4814BDY-T1-E3

    Si4814DY

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


    Original     		PDF Si4814DY S-03951--Rev. 26-May-03

    4535A

    Abstract: No abstract text available
    Text: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4814BDY 18-Jul-08 4535A

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original     		PDF Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05

    Si4814DY-T1

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 D LITTLE FOOTr Plus Integrated Schottky


    Original     		PDF Si4814DY Si4814DY-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 11-Mar-11

    Si4814DY-T1

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 D LITTLE FOOTr Plus Integrated Schottky


    Original     		PDF Si4814DY Si4814DY-T1 S-32124--Rev. 27-Oct-03

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    NV18

    Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
    Text: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF BTQ00 uFCPGA-478 NV18/34/31M LA-1841 PR113 NV18 isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal

    htc hd2 schematic

    Abstract: max1987 rG82855GM FW82801DBM RG82855 asus crb input voltage point lcd inverter board schematic TL494 ASUS sir s4 105a *6jk3
    Text: 5 4 3 2 1 FILE LIST THERMAL A3/A6 BLOCK DIAGRAM D 05 POWER IMVP4 BANIAS 24.5W FAN 35 03 37 38 39 40 41 42 43 44 45 04 PSB C North Bridge DDR A3N 855GM 266 A3L 852GM 266 CPU Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400)


    Original     		PDF 855GM 852GM 855GM/GME 852GM/GMV/GME 855GME 852GME 852GMV ATA100 htc hd2 schematic max1987 rG82855GM FW82801DBM RG82855 asus crb input voltage point lcd inverter board schematic TL494 ASUS sir s4 105a *6jk3

    C6198

    Abstract: a17 c178 100v 12p quanta TMS 3617 CX20468-31 mtp42 cpu c644 100v 27p capacitor 100u 63V a70 4013 100 12p Quanta KT2
    Text: 5 4 3 2 PCB Rev: A 1 Sch ver : 20040402_07 KT2 BLOCK DIAGRAM D PCB STACK UP LAYER 1 : TOP D PENTIUM-M / Montara-GM / ICH4-M LAYER 2 : GND LAYER 3 : IN1 CPU PENTIUM-M CPU THERMAL SENSOR LAYER 4 : IN2 GMT-781 478 Pins micro FC-PGA PAGE: 3 LAYER 5 : VCC 14.318MHz


    Original     		PDF 4X100MHZ GMT-781 318MHz CY28346/ ICS950810 MAX1907 MAX1999 266MHz DTC144EUA 2N7002E C6198 a17 c178 100v 12p quanta TMS 3617 CX20468-31 mtp42 cpu c644 100v 27p capacitor 100u 63V a70 4013 100 12p Quanta KT2

    LM3582

    Abstract: max1987 RP113 LM358 1.2 N3 3kv SEC MLB-160808-0220B-N3 quanta 1394XO PWS-37 txc 14.318MHZ
    Text: 1 2 * GM 1. VCC PR57: 4 5 1 GME 1.2V 17.4K/F 1.35V 14K/F 27.4/F 37.4/F 2. HLRCOMP R91: 3 Intel RB1 Block Diagram BANIAS/Dothan MBX-112 478 PIN micro FC-BGA A A System bus 4x100 MHz R/G/B CRT NORTH BRIDGE LVDS SIGNAL LCD ( Up to UXGA ) DRAM SIGNAL Montara-GME


    Original     		PDF 14K/F MBX-112 4x100 66MHz 266-MB/s) 82801DBM ALC203 TPA0312 33MHZ TI-PCI7420 LM3582 max1987 RP113 LM358 1.2 N3 3kv SEC MLB-160808-0220B-N3 quanta 1394XO PWS-37 txc 14.318MHZ

    KB3910

    Abstract: DCL51 LA-1881 LA1881REV foxconn Compal Electronics BGA421 RTL8101L compal RT810
    Text: A B C D E 1 1 Compal Confidential 2 2 DCL51 Schematics Document Banias uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-06-12 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title SCHEMATIC M/B LA-1881 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF DCL51 LA-1881 TPRH6D38 TPRH6D38-N. PR311 PJP11 pc151 pc174 pc198 KB3910 LA-1881 LA1881REV foxconn Compal Electronics BGA421 RTL8101L compal RT810