Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4425BDY-T1-E3 SO8 Search Results

    SI4425BDY-T1-E3 SO8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-HSOPAMP-E-1RZ Analog Devices SO8 dedicated fdbck w/epad con Visit Analog Devices Buy
    LF398S8#TRPBF Analog Devices Prec Smpl & Hold Amp in SO8 Pa Visit Analog Devices Buy
    LF398S8#PBF Analog Devices Prec Smpl & Hold Amp in SO8 Pa Visit Analog Devices Buy
    FIDO5100BBCZ Analog Devices REM Switch Visit Analog Devices Buy
    FIDO5200CBCZ Analog Devices REM Switch with EtherCAT Visit Analog Devices Buy

    SI4425BDY-T1-E3 SO8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4425DDY

    Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4425DDY Si4425BDY Si4425DDY-T1-GE3 Si4425BDY-T1-E3 Si4425BDY-T1-GE3 Cond019 15-Jul-09 SI4425BDY-T1-E3 SO8 65188

    Si4425BDY

    Abstract: Si4425BDY-T1
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 08-Apr-05 Si4425BDY-T1

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 S-50366--Rev. 28-Feb-05

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor